L9012RLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9012PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device L9012PLT1G S-L9012PLT1G L9012PLT3G S-L9012PLT3G L9012QLT1G S-L9012QLT1G L9012QLT3G S-L9012QLT3G L9012RLT1G S-L9012RLT1G L9012RLT3G L9012RLT3G L9012SLT1G S-L9012SLT1G L9012SLT3G S-L9012SLT3G Marking 12P Shipping 3000/Tape&Reel 12P 10000/Tape&Reel 12Q 3000/Tape&Reel 12Q 10000/Tape&Reel 12R 3000/Tape&Reel 12R 10000/Tape&Reel 3 1 2 SOT-23 (TO-236AB) 3 COLLECTOR 12S 3000/Tape&Reel 12S 3000/Tape&Reel 12S 1 10000/Tape&Reel BASE MAXIMUM RATINGS 2 Rating Symbol Value Collector-Emitter Voltage VCEO -20 V Collector-Base Voltage VCBO -40 V Emitter-Base Voltage VEBO -5 V IC -500 mAdc Collector current-continuoun EMITTER Unit THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) Symbol o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Max Unit 225 mW 1.8 mW/oC PD R θ JA 556 o C/W PD Total Device Dissipation o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 300 mW 2.4 mW/oC R θJA 417 Tj ,Tstg -55 to +150 o C/W o C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1.0mA) Emitter-Base Breakdown Voltage (IE=-100µ A) Collector-Base Breakdown Voltage (IC=-100 µ A) Collector Cutoff Current (VCB=-35V) Emitter Cutoff Current (VBE=-4V) V(BR)CEO -20 - - V V(BR)EBO -5 - - V V(BR)CBO -40 - - V I CBO IEBO - - -150 nA -150 nA Rev.O 1/2 LESHAN RADIO COMPANY, LTD. L9012PLT1G Series S-L9012PLT1G Series ON CHARACTERISTICS DC Current Gain (IC=-50mA, VCE =-1V) Collector-Emitter Saturation Voltage (IC=-500mA,I B=-50mA) NOTE: * H fe VCE(S) P HFE 100~200 Q 100 - 600 - - -0.6 R 150~300 200~400 V S 300~600 SOT-23 (TO-236AB) A L NOTES: 1. CONTROLLING DIMENSION: MILLIMETERS 3 2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH B S 1 V SOLDER PLATING. 2 DIM A B C D G H J K L S V G C D H K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 J PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 2/2