L9013QLT1G

L9013QLT1G S-L9013QLT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. SOT23 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9013QLT1G 13Q 3000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector-Emitter Voltage VCEO 20 V Collector-Base voltage VCBO 40 V Emitter-Base Voltage VEBO 5 V IC 500 mA Collector current-continuoun 4. THERMAL CHARACTERISTICS Parameter Symbol Total Device Dissipation, Limits Unit PD FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/℃ 556 ℃/W Thermal Resistance, Junction–to–Ambient RΘJA Total Device Dissipation, PD Alumina Substrate, (Note 2)@ TA = 25ºC 300 mW 2.4 mW/℃ RΘJA 417 ℃/W TJ,Tstg −55∼+150 ℃ Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.O Mar. 2017 1/5 L9013QLT1G,S-L9013QLT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC =1.0mA) Emitter-Base Breakdown Voltage (IE = 100µA) Collector-Base Breakdown voltage (IC = 100µA) Collector Cutoff Current (VCB = 35 V) Emitter Cutoff Current (VEB = 4V) Symbol V(BR)CEO V(BR)EBO V(BR)CBO ICBO IEBO Min. Typ. Max. 20 - - Unit Vdc Vdc 5 - Vdc 40 - nA - - 150 nA - - 150 150 - 300 ON CHARACTERISTICS DC Current Gain (IC =50mA, VCE =1V) Collector-Emitter Saturation Voltage (IC =500mA,IB =50mA) Leshan Radio Company, LTD. HFE VCE(S) Rev.O Mar. 2017 Vdc - - 0.6 2/5 L9013QLT1G,S-L9013QLT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 400 IB=5mA 0.5 IB=4mA VCE=1V 350 IB=3mA 150℃ 0.4 IC,Collector Current(A) 300 HFE 250 25℃ 200 150 -55℃ IB=2mA 0.3 0.2 IB=1mA 100 0.1 Ta=25℃ 50 0 0.0001 0.0 0.001 0.01 0.1 IC,Collect Current(A) 1 0 1.2 1 VCE=1V -55℃ 1 0.8 -55℃ 0.7 0.8 25℃ 0.6 VBESAT(V) VBE Base to Emittor Voltage(V) 10 IC vs. VCE HFE vs. IC 0.9 2 4 6 8 VCE,Colleect to emittor Voltage(V) 0.5 150℃ 0.4 0.6 0.4 0.3 0.2 25℃ 150℃ 0.2 IC/IB=10 0.1 0 0.0001 0.001 0.01 0.1 IC,Collector Current(A) 1 0 0.0001 VBE vs. IC Leshan Radio Company, LTD. 0.001 0.01 0.1 IC,Collector Current(A) 1 VBESAT vs. IC Rev.O Mar. 2017 3/5 L9013QLT1G,S-L9013QLT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.2 1 0.9 400mA 0.8 200mA 10mA 0.5 50mA 100mA 0.4 150℃ 0.14 VCESAT(V) 0.6 IC/IB=10 0.16 300mA 0.7 VCESAT(V) 0.18 500mA 0.3 0.12 0.1 25℃ 0.08 0.06 0.2 -55℃ 0.04 90mA 0.1 0.02 0 5.0E-06 5.0E-05 5.0E-04 5.0E-03 5.0E-02 0 0.0001 IB,Bae Current(A) 0.001 0.01 IC(A) 0.1 1 VCESAT vs. IC VCESAT vs. IB 3000 VCE=20V ICEO(nA) 2500 2000 1500 1000 500 0 -25 0 25 50 75 100 TJ,Temperature(℃) 125 150 ICEO vs. TJ Leshan Radio Company, LTD. Rev.O Mar. 2017 4/5 L9013QLT1G,S-L9013QLT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.O Mar. 2017 5/5