L9013RLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9013PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L9013PLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device L9013PLT1G S-L9013PLT1G L9013PLT3G S-L9013PLT3G L9013QLT1G S-L9013QLT1G L9013QLT3G S-L9013QLT3G L9013RLT1G S-L9013RLT1G L9013RLT3G S-L9013RLT3G L9013SLT1G S-L9013SLT1G L9013SLT3G S-L9013SLT3G Marking 13P Shipping 3000/Tape&Reel 13P 10000/Tape&Reel 13Q 3000/Tape&Reel 13Q 10000/Tape&Reel 13R 3000/Tape&Reel 3 1 2 SOT-23 (TO-236AB) 13R 10000/Tape&Reel 13S 3000/Tape&Reel 13S 10000/Tape&Reel 3 COLLECTOR MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 20 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5 V IC 500 mAdc Symbol Max Unit 225 mW 1.8 mW/oC 556 o Collector current-continuoun 2 EMITTER THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θ JA C/ W PD Total Device Dissipation o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg 300 mW 2.4 mW/oC 417 -55 to +150 C/ W o o C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µA) Collector-Base Breakdown Voltage (IC=100µA) Collector Cutoff Current (VCB=35V) Emitter Cutoff Current (VEB=4V) V(BR)CEO 20 - - V V(BR)EBO 5 - - V V(BR)CBO 40 - - V 150 nA 150 nA ICBO IEBO - - Rev.O 1/2 LESHAN RADIO COMPANY, LTD. L9013PLT1G Series S-L9013PLT1G Series ON CHARACTERISTICS DC Current Gain (IC=50mA, VCE=1V) Collector-Emitter Saturation Voltage (IC=500mA,IB=50mA) NOTE: Hfe 100 - 600 - - 0.6 VCE(S) * P Q HFE 100~200 150~300 R 200~400 V S 300~600 SOT-23 (TO-236AB) NOTES: A 1. CONTROLLING DIMENSION: MILLIMETERS L 2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH SOLDER PLATING. 3 B S 1 V DIM A B C D G H J K L S V 2 G INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 C D H K PIN 1. BASE 2. EMITTER 3. COLLECTOR J 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 2/2