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LBAS116LT1G

LBAS116LT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    表面贴装低漏二极管 85V -65℃~+150℃@(Tj) Single 1V 3000ns 0.005uA 215mA SOT-23

  • 详情介绍
  • 数据手册
  • 价格&库存
LBAS116LT1G 数据手册
LESHAN RADIO COMPANY, LTD. Surface Mount Low Leakge Diode FEATURE . · · · · · LBAS116LT1G S-LBAS116LT1G LBAW156LT1G S-LBAW156LT1G LBAV170LT1G S-LBAV170LT1G LBAV199LT1G S-LBAV199LT1G Ultra-Small Surface Mount Package Very Low Leakage Current Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MECHANICAL DATA · · Case: SOT-23 · · · Moisture sensitivity: Level 1 per J-STD-020C · Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 3 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). 1 2 Weight: 0.002 grams (approx.) DEVICE MARKING ORDERING INFORMATION SOT–23 Shipping Marking Device LBAS116LT1G K50 3000 Tape & Reel S-LBAS116LT1G LBAS116LT3G S-LBAS116LT3G LBAW156LT1G S-LBAW156LT1G K50 10000 Tape & Reel 53 3000 Tape & Reel LBAW156LT3G S-LBAW156LT3G 53 10000 Tape & Reel LBAV170LT1G S-LBAV170LT1G LBAV170LT3G S-LBAV170LT3G LBAV199LT1G S-LBAV199LT1G LBAV199LT3G S-LBAV199LT3G 51 3000 Tape & Reel 51 10000 Tape & Reel 52 3000 Tape & Reel 52 10000 Tape & Reel LBAW156LT1G LBAS116LT1G LBAV199LT1G LBAV170LT1G Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Single Diode Double Diode Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol Value Unit VRRM VRWM VR 85 V VR(RMS) 60 V IFM 215 125 mA IFRM 500 mA IFSM 4.0 1.0 0.5 A Pd 150 mW RqJA 833 °C/W Tj , TSTG -65 to +150 °C Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBAS116LT1G,S-LBAS116LT1G, LBAV170LT1G,S-LBAV170LT1G, LBAW156LT1G,S-LBAW156LT1G, LBAV199LT1G,S-LBAV199LT1G Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 3) Symbol Min Typ Unit V(BR)R 85 Test Condition ¾ ¾ V IR = 100mA V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Forward Voltage VF ¾ ¾ 0.90 1.0 1.1 1.25 Leakage Current (Note 3) IR ¾ ¾ 5.0 80 nA nA VR = 75V VR = 75V, Tj = 150°C Total Capacitance CT ¾ 2 ¾ pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ¾ ¾ 3.0 ms IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W 3. Short duration test pulse used to minimize self-heating effect. 250 200 150 100 50 0 0 25 50 75 100 125 150 IF, INSTANTANEOUS FORWARD CURRENT (mA) Notes: 1000 100 10 1.0 0.1 0.01 0 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 0.4 0.8 1.2 1.6 2.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10 160 VR = 75V TA, AMBIENT TEMPERATURE (°C) 140 IR, REVERSE CURRENT (nA) PD, POWER DISSIPATION (mW) Max 1 0.1 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Typical Reverse Characteristics 200 120 100 IF = 1mA IF = 150mA 80 IF = 10mA 60 IF = 50mA 40 20 0 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 VF(AVE), AVERAGE FORWARD VOLTAGE (V) Fig. 4 Typical Forward Voltage vs Ambient Temperature Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LBAS116LT1G,S-LBAS116LT1G, LBAV170LT1G,S-LBAV170LT1G, LBAW156LT1G,S-LBAW156LT1G, LBAV199LT1G,S-LBAV199LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. CAHODE 3. CAHODE/ANODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3
LBAS116LT1G
物料型号: - LBAS116LT1G - S-LBAS116LT1G - LBAW156LT1G - S-LBAW156LT1G - LBAV170LT1G - S-LBAV170LT1G - LBAV199LT1G - S-LBAV199LT1G

器件简介: - 表面安装低压漏电流二极管 - 超小型表面安装封装 - 符合无铅/RoHS标准 - 符合AEC-Q101高可靠性标准

引脚分配: - 1. 阳极 - 2. 阴极 - 3. 阴极/阳极

参数特性: - 峰值重复反向电压:85V - 有效值反向电压:60V - 正向连续电流(单二极管/双二极管):215mA/125mA - 重复峰值正向电流:500mA - 非重复峰值正向浪涌电流:4.0A(1.0us)、1.0A(1.0ms)、0.5A(1.0s) - 功率耗散:150mW - 热阻(结到环境空气):833°C/W - 工作和存储温度范围:-65°C至+150°C

功能详解: - 器件具有低漏电流特性,适用于汽车和其他需要独特现场和控制变化要求的应用。 - 符合AEC-Q101标准,具备PPAP能力。

应用信息: - 适用于需要低漏电流和高可靠性的应用场景。

封装信息: - 封装类型:SOT-23 - 封装材料:模塑塑料,UL阻燃等级94V-0 - 湿度敏感性:J-STD-020C标准下的1级
LBAS116LT1G 价格&库存

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LBAS116LT1G
  •  国内价格
  • 1+0.08680
  • 30+0.08370
  • 100+0.08060
  • 500+0.07440
  • 1000+0.07130
  • 2000+0.06944

库存:2155

LBAS116LT1G
  •  国内价格
  • 20+0.18800
  • 100+0.14060
  • 800+0.10900
  • 3000+0.07900
  • 15000+0.07110

库存:4229

LBAS116LT1G
    •  国内价格
    • 50+0.10206
    • 500+0.08111
    • 3000+0.06945

    库存:2296