LBAS16TW1T1G

LESHAN RADIO COMPANY, LTD. LBAS16TW1T1G SURFACE MOUNT FAST SWITCHING DIODE LBAS16TW1T1G S-LBAS16TW1T1G Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance Also Available in Lead Free Version z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Pb-Free package is available DEVICE MARKING LBAS16TW1T1G=KA2 Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRM 100 V VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current (Note 1) IFM 300 mA Average Rectified Output Current (Note 1) IO 150 mA IFSM 2.0 1.0 A RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Pd 200 mW RqJA 625 °C/W Tj , TSTG -65 to +150 °C Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit V(BR)R 75 ¾ V IR = 1mA Forward Voltage (Note 2) VF ¾ 0.715 0.855 1.0 1.25 V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Current (Note 2) IR ¾ 1.0 50 30 25 mA mA mA nA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance CT ¾ 2.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ¾ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Reverse Breakdown Voltage (Note 2) Notes: Test Condition 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBAS16TW1T1G, S-LBAS16TW1T1G 10 I R , REVERSE CURRENT (µA) T A = 150°C T A= 85°C 10 TA= – 40°C 1.0 T A= 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 50 0.68 C D , DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LBAS16TW1T1G, S-LBAS16TW1T1G SC−88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 DIM A A1 A3 b C D E e L HE 4 HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* A3 C 6 6 XX M A1 L 1 XX OR M A 1 XX = Specific Device Code M = Date Code Rev.O 3/3