0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
LBAS20HT1G

LBAS20HT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD323

  • 描述:

    高压开关二极管

  • 数据手册
  • 价格&库存
LBAS20HT1G 数据手册
LBAS20HT1G S-LBAS20HT1G High Voltage Switching Diode 1. FEATURES ● We declare that the material of product compliance with SOD323(SC-76) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 CATHODE 2 ANODE 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR 10000/Tape&Reel 3. MAXIMUM RATINGS (Ta = 25°C) Parameter Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF Limits 200 Unit 200 mA 625 mA IFM(surge) V 4.THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR–5 Board(Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1.FR–5 Minimum Pad Limits Unit 200 mW 1.57 mW/℃ ℃/W ℃ PD RθJA 635 TJ,Tstg -55~+150 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. IR - - 1 - 100 Reverse Voltage Leakage Current (VR = 200 V) (VR = 200 V, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µA) V(BR) V 200 - mV Forward voltage (IF =100mA) VF (IF =200mA) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω) Leshan Radio Company, LTD. Unit µA CD trr Rev.A Jan. 2018 - - 1000 - - 1250 pF - - 5 ns - - 50 1/3 LBAS20HT1G,S-LBAS20HT1G High Voltage Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1 1.00E-04 150℃ 0.1 IR,Reverse Current(A) IF,Forward Current(A) 1.00E-05 150℃ 85℃ 0.01 25℃ -55℃ 1.00E-06 85℃ 1.00E-07 25℃ 1.00E-08 0.001 1.00E-09 -55℃ 0.0001 1.00E-10 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 IF vs. VF 0 50 100 150 200 250 VR,Reverse Voltage(V) 300 IR vs. VR 1.4 1.3 f=1MHz Ta=25℃ CT,Capacitor(pF) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0 10 20 30 VR,Reverse Voltage(V) 40 CT vs. VR Leshan Radio Company, LTD. Rev.A Jan. 2018 2/3 LBAS20HT1G,S-LBAS20HT1G High Voltage Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Jan. 2018 3/3
LBAS20HT1G 价格&库存

很抱歉,暂时无法提供与“LBAS20HT1G”相匹配的价格&库存,您可以联系我们找货

免费人工找货
LBAS20HT1G
    •  国内价格
    • 50+0.11794
    • 500+0.09381
    • 3000+0.08041
    • 6000+0.07237
    • 24000+0.06541

    库存:29087

    LBAS20HT1G
      •  国内价格
      • 1+0.08680
      • 30+0.08370
      • 100+0.08060
      • 500+0.07440
      • 1000+0.07130
      • 2000+0.06944

      库存:680

      LBAS20HT1G
        •  国内价格
        • 3000+0.06958

        库存:3000