LBAS21CLT1G

LBAS21CLT1G S-LBAS21CLT1G High Voltage Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● SOT23(TO-236) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LBAS21CLT1G LBAS21CLT3G JU JU 3000/Tape&Reel 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Continuous reverse voltage Peak Forward Current Peak Forward Surge Current Symbol Limits Unit VR IF IFSM 250 225 625 V mA mA Symbol Limits Unit PD 225 mW 1.8 mW/℃ RθJA 556 ℃/W PD 300 mW 2.4 mW/℃ RθJA 417 TJ , Tstg -55~+150 ℃/W ℃ 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation FR– 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal resistance from junction to ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal resistance from junction to ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.B Jul. 2017 1/4 LBAS21CLT1G, S-LBAS21CLT1G High Voltage Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) CHARACTERISTICS Reverse Voltage Leakage Current (VR = 250V) (VR=200V) Symbol IR (VR=200V, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µA) Forward voltage (IF =100mA) VBR VF (IF =200mA) Diode capacitance (f=1MHz,VR =0) Reverse Recovery Time (IF = IR = 30mA, RL = 100 Ω) Leshan Radio Company, LTD. Cd Trr Rev.B Jul. 2017 Min Max Unit - 100 - 0.1 - 100 250 - - 1000 - 1250 - 5 pF - 50 nS µA V mV 2/4 LBAS21CLT1G, S-LBAS21CLT1G High Voltage Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1 1.0E-04 150 ℃ 1.0E-05 0.1 IF,Forward Current(A) IR,Reverse Current(A) 85℃ 1.0E-06 1.0E-07 25℃ 1.0E-08 150℃ 0.01 85℃ -55℃ 25℃ 0.001 -55℃ 1.0E-09 1.0E-10 0 50 100 150 200 250 300 0.0001 VR,Reverse Voltage(V) 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 IF vs. VF IR vs. VR 1.8 f=1MHz Ta=25℃ 1.7 CT,Capacitor(pF) 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 10 20 30 VR,Reverse Voltage(V) CT vs. VR Leshan Radio Company, LTD. Rev.B Jul. 2017 3/4 LBAS21CLT1G, S-LBAS21CLT1G High Voltage Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Jul. 2017 4/4