LBAS21HT3G

LBAS21HT1G S-LBAS21HT1G High Voltage Switching Diode 1. FEATURES ● We declare that the material of product compliance with SOD323(SC-76) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 1 CATHODE qualified and PPAP capable. 2 ANODE 2. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G JS 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Continuous Reverse Voltage Peak Forward Current Repetitive Peak Forward Surge Current (tp=1ms, δ=0.2 5) Non-Repetitive Peak Forward Surge Current (tp =1µs) (tp =100µs) (tp =10ms) Symbol Limits Unit VR IF IFRM 250 200 625 V mA mA 9 3 1.7 A A A IFSM 4. THERMAL CHARACTERISTICS Symbol Parameter Total Device Dissipation FR– 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR–5 Minimum Pad Leshan Radio Company, LTD. Rev.C Apr. 2018 PD Limits Unit 200 mW 1.57 mW/℃ RθJA 635 TJ , Tstg -55~+150 ℃/W ℃ 1/4 LBAS21HT1G, S-LBAS21HT1G High Voltage Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) CHARACTERISTICS Reverse Voltage Leakage Current (VR=200V) Symbol Min Max Unit IR - 0.1 µA - 100 250 - - 1000 - 1250 - 5 pF - 50 nS (VR=200V, TJ = 150°C) Reverse Breakdown Voltage VBR (IBR = 100 µA) Forward voltage (IF =100mA) VF (IF =200mA) Diode capacitance Cd (f=1MHz,VR =0) Reverse Recovery Time Trr (IF = IR = 30mA, RL = 100Ω) V mV 820 Ω +10 V 2k 100 µH 0.1 µF tp tr IF 0.1 µF t IF trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; measured at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit Leshan Radio Company, LTD. Rev.C Apr. 2018 2/4 LBAS21HT1G, S-LBAS21HT1G High Voltage Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1 1.00E-04 150℃ 1.00E-05 85℃ 150 ℃ IR,Reverse Current(A) IF,Forward Current(A) 0.1 25℃ 0.01 -55℃ 85℃ 1.00E-06 1.00E-07 25℃ 1.00E-08 0.001 1.00E-09 -55℃ 0.0001 1.00E-10 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 0 50 100 150 200 VR,Reverse Voltage(V) 250 IR vs. VR IF vs. VF 1.6 f=1MHz Ta=25℃ 1.4 CT(pF) 1.2 1 0.8 0.6 0.4 0 10 20 30 40 50 VR(V) CT vs. VR Leshan Radio Company, LTD. Rev.C Apr. 2018 3/4 LBAS21HT1G, S-LBAS21HT1G High Voltage Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Apr. 2018 4/4