LBAS316T1G

LESHAN RADIO COMPANY, LTD. High-speed diode LBAS316T1G S-LBAS316T1G DESCRIPTION The LBAS316T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD 1 plastic package. FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 500 mA. · We declare that the material of product compliance with RoHS requirements. · S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOD– 323 1 CATHODE 2 ANODE APPLICATIONS · High-speed switching in e.g. surface mounted circuits. ORDERING INFORMATION Device Marking LBAS316T1G S-LBAS316T1G Z9 LBAS316T3G S-LBAS316T3G Z9 Shipping 3000 Tape & Reel 10000 Tape & Reel ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage see Fig.2 I F = 1 mA I F = 10 mA I F =50 mA I F = 150 mA IR reverse current see Fig.4 V R = 25 V V R =75 V V R = 25 V; T j = 150 °C V R = 75 V; T j = 150 °C; Cd t rr diode capacitance reverse recovery time V fr forward recovery voltage f = 1 MHz; V R = 0; see Fig.5 when switched from I F =10mA to I R = 10mA; R L = 100 Ω; measured at I R = 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 MAX. UNIT 715 855 mV mV 1 1.25 V V 30 1 nA µA 30 50 µA µA 2 4 pF ns 1.75 V Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS316T1G,S-LBAS316T1G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL V RRM VR VR(RMS) PARAMETER CONDITIONS repetitive peak reverse voltage continuous reverse voltage RMS reverse voltage I FRM continuous forward current repetitive peak forward current I FSM non-repetitive peak forward current IF P tot T stg Tj MAX. UNIT – – 100 75 V V – 53 V – – 250 500 mA mA square wave; T j =25°C prior to surge; see Fig.3 t =1µs – 5 A t =1 ms t =1 s – – 1 0.5 A A – – -55 – 200 625 +150 150 total power dissipation thermal resistance junction to ambient air storage temperature junction temperature RqJA MIN. mW °C/W °C °C 300 80 200 I F (mA) 60 40 100 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 (1) T j = 150 °C; typical values. (2)T j =25°C; typical values. (3) T j =25°C; maximum values. 150 0 0 1 2 V F( V ) Fig.1 Steady State Power Derating Fig.2 Forward current as a function of forward voltage. 10 2 10 I FSM (A) POWER DISSIPATION (%) 100 1 Based on square wave currents; T j =25°C prior to surge. 10 -1 1 10 102 103 104 t P ( µs ) Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LBAS316T1G,S-LBAS316T1G 2.0 10 5 10 4 C d (pF) I R (nA) 1.6 10 3 0.8 10 2 f = 1 MHz ; T j =25°C; 10 0 100 200 T J ( °C ) Fig.4 Reverse current as a function of junction temperature. 0 0 4 8 12 16 V R( V ) Fig.5 Diode capacitance as a function of reverse voltage; typical values. (1) I R = 1 mA. Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time t r = 0.35 ns. Fig.6 Reverse recovery voltage test circuit and waveforms. Input signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ ≤ 0.005. Fig.7 Forward recovery voltage test circuit and waveforms. Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LBAS316T1G,S-LBAS316T1G PACKAGE DIMENSIONS SOD-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 Rev.O 4/4