LBAS516T1G

LBAS516T1G S-LBAS516T1G High-speed Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring SOD523(SC-79) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Ultra small plastic SMD package ● High switching speed: max. 4 ns ● Continuous reverse voltage: max. 75 V ● Repetitive peak reverse voltage: max. 85 V ● Repetitive peak forward current: max. 500 mA. 2. APPLICATIONS ● High-speed switching in e.g. surface mounted circuits. 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS516T1G 6 3000/Tape&Reel LBAS516T3G 6 10000/Tape&Reel 4. MAXIMUM RATINGS(In accordance with the Absolute Maximum Rating System IEC134) Parameter repetitive peak reverse voltage continuous reverse voltage continuous forward current(Ts =90°C)(Note 1) repetitive peak forward current Symbol VRRM Limit 85 Unit V VR 75 V IF 250 mA IFRM 500 mA 4 A 1 A 0.5 A non-repetitive peak forward current(square wave; Tj=25°C prior to surge) (t =1µs) IFSM (t =1ms ) (t =1s) total power dissipation(Ts =90°C)(Note 1) Ptot 500 mW storage temperature Tstg -65~+150 ℃ junction temperature Tj 150 ℃ 1. Ts is the temperature at the soldering point of the cathode tab. 5. THERMAL CHARACTERISTICS Parameter Thermal Resistance From Junction to Soldering Point Leshan Radio Company, LTD. Rev.O Mar. 2017 Symbol Rθjs Value Unit 120 K/W 1/4 LBAS516T1G, S-LBAS516T1G High-speed Diode 6. ELECTRICAL CHARACTERISTICS (Tj =25°C unless otherwise specified.) Parameter Symbol MIN MAX Unit - 715 mV - 855 mV (IF= 50mA) - 1 V (IF= 150mA) - 1.25 V - 30 nA - 1 µA (VR = 25 V,Tj = 150°C) - 30 µA (VR = 75 V,Tj = 150°C) - 50 µA - 1 - 4 - 1.75 Forward Voltage (IF= 1mA) (IF= 10mA) VF Reverse Current (VR = 25 V) (VR = 75 V) IR Diode Capacitance Cd (f=1MHz, VR = 0) Reverse Recovery Time (When switched from IF=10mA to IR = 10mA;RL=100Ohm; measured at IR = 1mA) Forward Recovery Voltage Vfr (when switched from IF=10mA; tr=20 ns) Leshan Radio Company, LTD. trr Rev.O Mar. 2017 pF nS V 2/4 LBAS516T1G, S-LBAS516T1G High-speed Diode 7.ELECTRICAL CHARACTERISTICS CURVES 1E-01 1E-04 150℃ IR,Reverse Current(A) IF,Forward Current(A) 1E-05 1E-02 150℃ 85℃ 1E-03 1E-06 85℃ 1E-07 25℃ 1E-08 -55℃ 25℃ -55℃ 1E-09 1E-10 1E-04 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 0 IF vs. VF 20 40 60 VR,Reverse Voltage(V) 80 IR vs. VR 500 450 CT,Capacitor(fF) 400 350 300 250 200 150 f=1MHz Ta=25℃ 100 50 0 0 5 10 VR,Reverse Voltage(V) 15 Capacitance Leshan Radio Company, LTD. Rev.O Mar. 2017 3/4 LBAS516T1G, S-LBAS516T1G High-speed Diode 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.50 NOM MAX MIN NOM MAX 0.60 0.70 0.020 0.024 0.028 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.07 0.14 0.20 0.003 0.006 0.008 D 1.10 1.20 1.30 0.043 0.047 0.051 E HE 0.70 0.80 0.90 0.028 0.031 0.035 1.50 1.60 1.70 0.059 0.063 0.067 L L2 0.30 REF 0.15 0.20 0.012 REF 0.25 0.006 0.008 0.010 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.O Mar. 2017 4/4