LBAS70-05LT1G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAS70LT1G Series S-LBAS70LT1G Series 3 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION 1 Anode Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements. BAS70 single diode. 3 Cathode/Anode ORDERING INFORMATION Device LBAS70LT1G S-LBAS70LT1G LBAS70LT3G S-LBAS70LT3G LBAS70-04LT1G S-LBAS70-04LT1G LBAS70-04LT3G S-LBAS70-04LT3G LBAS70-05LT1G S-LBAS70-05LT1G LBAS70-05LT3G S-LBAS70-05LT3G LBAS70-06LT1G S-LBAS70-06LT1G LBAS70-06LT3G S-LBAS70-06LT3G 3 Cathode Marking Shipping BE 3000 Tape & Reel BE 10000 Tape & Reel CG 3000 Tape & Reel CG 10000 Tape & Reel EH EH 3000 Tape & Reel EH 10000 Tape & Reel 1 Anode 2 Cathode BAS70-04 double diode. 3 Cathode 1 Anode 2 Anode BAS70-05 double diode. GK 3000 Tape & Reel GK 10000 Tape & Reel 3 Anode 1 Cathode 2 Cathode BAS70-06 double diode. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS70LT1G Series , S-LBAS70LT1G Series MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 70 70 70 100 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp