LBAS70LT1G

LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS70LT1G Series S-LBAS70LT1G Series Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 APPLICATIONS SOT- 23 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different 1 Anode BAS70 single diode. pinning are available. We declare that the material of product compliance with RoHS requirements. 3 Cathode/Anode ORDERING INFORMATION Device LBAS70LT1G S-LBAS70LT1G LBAS70LT3G S-LBAS70LT3G LBAS70-04LT1G S-LBAS70-04LT1G LBAS70-04LT3G S-LBAS70-04LT3G LBAS70-05LT1G S-LBAS70-05LT1G LBAS70-05LT3G S-LBAS70-05LT3G LBAS70-06LT1G S-LBAS70-06LT1G LBAS70-06LT3G S-LBAS70-06LT3G Marking BE 3 Cathode Shipping 3000 Tape & Reel BE 10000 Tape & Reel CG 3000 Tape & Reel CG 10000 Tape & Reel EH EH 3000 Tape & Reel EH 10000 Tape & Reel GK 3000 Tape & Reel GK 10000 Tape & Reel 1 Anode 2 Cathode BAS70-04 double diode. 3 Cathode 1 Anode 2 Anode BAS70-05 double diode. 3 Anode 1 Cathode 2 Cathode BAS70-06 double diode. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LBAS70LT1G Series , S-LBAS70LT1G Series MAXIMUM RATINGS (TA = 25°C) Parameter Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature Symbol VR IF IFSM IFSM Tstg Tj Tamb Min. -65 -65 Max. 70 70 70 100 +150 150 +150 Unit V mA mA mA °C °C °C Conditions tp