LBAT54HT3G

LBAT54HT1G S-LBAT54HT1G Schottky Barrier Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOD323(SC-76) qualified and PPAP capable. ● Extremely Fast Switching Speed ● Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAT54HT1G JV 3000/Tape&Reel LBAT54HT3G JV 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 200 mW Derate above 25ºC 1.57 mW/ºC RΘJA 635 ºC/W TJ,Tstg −55∼+125 ºC Parameter 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.F Aug 2016 1/4 LBAT54HT1G, S-LBAT54HT1G Schottky Barrier Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (IR = 10μAdc) Reverse Voltage Leakage Current (VR = 25Vdc) Diode Capacitance (VR =1.0V , f = 1.0 MHz) Forward Voltage Symbol VBR IR CT Min. Typ. Max. 30 - μA - 0.5 2 pF - - 10 VF V (IF = 0.1 mAdc) - 0.22 0.24 (IF = 1 mAdc) - 0.29 0.32 (IF = 10 mAdc) - 0.35 0.4 (IF = 30 mAdc) - 0.41 0.5 (IF = 100 mAdc) - 0.52 1 Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) Leshan Radio Company, LTD. trr IFRM IFSM Rev.F Aug 2016 Unit V ns - - 5 - - 300 mA mA - - 600 2/4 LBAT54HT1G, S-LBAT54HT1G Schottky Barrier Diode 6.ELRCTRICAL CHARACTERISTICS CURVES 1000 1000 125℃ 100 85℃ 125℃ IR, Reverse Current(uA) IF, Forward Current(mA) 100 85℃ 10 25℃ 1 10 1 25℃ 0.1 0.01 -55℃ 0.001 -55℃ 0.1 0.0001 0 0.1 0.2 0.3 0.4 VF, Forward Voltage(V) 0.5 0.6 Forward Characteristics 0 5 10 15 20 VR, Reverse Voltage(V) 25 30 Reverse Characteristics 18 f=1MHz 16 C,Capacitor(pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, Reverse Voltage(V) 25 30 Capacitor Characteristics Leshan Radio Company, LTD. Rev.F Aug 2016 3/4 LBAT54HT1G, S-LBAT54HT1G Schottky Barrier Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN 0.8 0.9 1 A1 0 0.05 0.1 A3 NOM MAX MIN NOM MAX 0.031 0.035 0.04 0 0.15REF 0.002 0.004 0.006REF b 0.25 0.32 C 0.089 0.12 D 1.6 1.7 1.8 0.062 0.066 E 1.15 1.25 1.35 0.045 0.049 0.053 L HE 0.08 2.3 0.4 0.01 0.012 0.016 0.177 0.003 0.005 0.007 0.07 0.003 2.5 2.7 0.09 0.098 0.105 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.F Aug 2016 4/4