LBAT54LT3G

LBAT54LT1G S-LBAT54LT1G Schottky Barrier Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ● Extremely Fast Switching Speed ● Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAT54LT1G JV3 3000/Tape&Reel LBAT54LT3G JV3 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+125 ºC 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD Junction–to–Ambient(Note 1) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.E Aug 2016 1/4 LBAT54LT1G, S-LBAT54LT1G Schottky Barrier Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (IR = 10μAdc) Reverse Voltage Leakage Current (VR = 25Vdc) Diode Capacitance (VR =1.0V , f = 1.0 MHz) Forward Voltage Symbol VBR IR CT Min. Typ. Max. 30 - μA - 0.5 2 pF - - 10 VF V (IF = 0.1 mAdc) - 0.22 0.24 (IF = 1 mAdc) - 0.29 0.32 (IF = 10 mAdc) - 0.35 0.4 (IF = 30 mAdc) - 0.41 0.52 0.5 1 (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) Leshan Radio Company, LTD. trr IFRM IFSM Rev.E Aug 2016 Unit V ns - - 5 - - 300 mA mA - - 600 2/4 LBAT54LT1G, S-LBAT54LT1G Schottky Barrier Diode 6.ELRCTRICAL CHARACTERISTICS CURVES 1000 1000 125℃ 100 85℃ 125℃ IR, Reverse Current(uA) IF, Forward Current(mA) 100 85℃ 10 25℃ 1 10 1 25℃ 0.1 0.01 -55℃ 0.001 -55℃ 0.0001 0.1 0 0.1 0.2 0.3 0.4 VF, Forward Voltage(V) 0.5 0.6 Forward Characteristics 0 5 10 15 20 VR, Reverse Voltage(V) 25 30 Reverse Characteristics 18 f=1MHz 16 C,Capacitor(pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, Reverse Voltage(V) 25 30 Capacitor Characteristics Leshan Radio Company, LTD. Rev.E Aug 2016 3/4 LBAT54LT1G, S-LBAT54LT1G Schottky Barrier Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.E Aug 2016 4/4