LBAT54XV2T1G

LBAT54XV2T1G S-LBAT54XV2T1G Schottky Barrier Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOD523(SC-79) qualified and PPAP capable. ● Extremely Fast Switching Speed ● Low Forward Voltage — 0.35 V (Typ) @ IF = 10 Ma 1 CATHODE 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAT54XV2T1G JV 3000/Tape&Reel LBAT54XV2T3G JV 10000/Tape&Reel 2 ANODE 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit VR 30 V Symbol Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 200 mW Derate above 25ºC 1.57 Reverse Voltage 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Thermal Resistance, PD RΘJA 635 mW/ºC ºC/W TJ,Tstg −40∼+125 ºC Junction–to–Ambient Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.C Jun. 2018 1/4 LBAT54XV2T1G, S-LBAT54XV2T1G Schottky Barrier Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Min. Typ. Max. 30 - - - - 10 - 0.5 2 - 0.22 0.24 - 0.29 0.32 - 0.35 0.4 (IF =30mA) - 0.41 0.5 (IF =100mA) Reverse Recovery Time - 0.52 1 - - 5 IF - - 200 mA Repetitive Peak Forward Current IFRM - - 300 mA Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM - - 600 mA Symbol Reverse Breakdown Voltage VBR (IR = 10 µA) Total Capacitance CT (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage IR (VR = 25 V) Unit V pF µA Forward voltage (IF =0.1mA) (IF =1mA) VF (IF =10mA) trr (IF = IR = 10 mA, IR(REC) = 1.0 mA) Forward Current (DC) V nS 820 Ω +10 V 2k 100 µH 0.1 µF tp tr IF 0.1 µF t IF trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% IR VR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr RECOVERY TIME EQUIVALENT TEST CIRCUIT Leshan Radio Company, LTD. Rev.C Jun. 2018 2/4 LBAT54XV2T1G, S-LBAT54XV2T1G Schottky Barrier Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1 1.00E-02 150℃ 1.00E-03 IR,Reverse Current(A) 0.1 150℃ IF(A) 85℃ 0.01 25℃ -55℃ 0.001 1.00E-04 85℃ 1.00E-05 1.00E-06 25℃ 1.00E-07 1.00E-08 -55℃ 1.00E-09 0.0001 0 0.2 0.4 0 0.6 VF(V) 10 20 30 40 VR,Reverse Voltage(V) 50 IR vs. VR IF vs. VF 16 f=1MHz Ta=25℃ 14 CT(pF) 12 10 8 6 4 2 0 0 10 20 30 VR(V) CT vs. VR Leshan Radio Company, LTD. Rev.C Jun. 2018 3/4 LBAT54XV2T1G, S-LBAT54XV2T1G Schottky Barrier Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.50 NOM MAX MIN NOM MAX 0.60 0.70 0.020 0.024 0.028 b 0.25 0.30 0.35 0.010 0.012 0.014 c 0.07 0.14 0.20 0.003 0.006 0.008 D 1.10 1.20 1.30 0.043 0.047 0.051 E HE 0.70 0.80 0.90 0.028 0.031 0.035 1.50 1.60 1.70 0.059 0.063 0.067 L L2 0.30 REF 0.15 0.20 0.012 REF 0.25 0.006 0.008 0.010 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Jun. 2018 4/4