LBAV170LT1G

LBAV170LT1G S-LBAV170LT1G Surface Mount Low Leakge Diode 1. FEATURES ● Ultra-Small Surface Mount Package ● Very Low Leakage Current ● We declare that the material of product compliance with SOT23(TO-236) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LBAV170LT1G 51 LBAV170LT3G 51 3000/Tape&Reel 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Limits Unit 85 V 60 215 V VR VR(RMS) Single Diode Double Diode Repetitive Peak Forward Current IFM IFRM 125 500 mA mA Non-Repetitive Peak Forward Surge Current (t = 1.0µs) IFSM (t = 1ms) 4 1 A 0.5 (t = 1s) 150 mW Thermal Resistance Junction to Ambient Air (Note 1) PD RθJA 833 ℃/W Operating and Storage Temperature Range Tj,Tstg -65~+150 ℃ Power Dissipation (Note 1) 1.Device mounted on FR-4 PC board with recommended pad layout 2. No purposefully added lead. Leshan Radio Company, LTD. Rev.B Oct. 2019 1/4 LBAV170LT1G,S-LBAV170LT1G Surface Mount Low Leakge Diode 4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) CHARACTERISTICS Reverse Breakdown Voltage(Note 3) Min Min Min 85 - - - - 0.9 - - 1 (IF =50mA) - - 1.1 (IF =150mA) - - 1.25 - - 5 - - 80 - 2 - - - 3 (IR = 100 µA) Forward voltage Symbol V(BR)R (IF =1mA) (IF =10mA) VF Unit V V Leakage Current (Note 3) (VR = 75V) (VR = 75V,Tj=150℃) Total Capacitance (f=1MHz,VR =0) Reverse Recovery Time (IF = IR = 10mA, RL = 100 Ω,Irr = 0.1 x IR) IR CT trr nA pF µS 3. Short duration test pulse used to minimize self-heating effect. Leshan Radio Company, LTD. Rev.B Oct. 2019 2/4 LBAV170LT1G,S-LBAV170LT1G Surface Mount Low Leakge Diode 5.ELECTRICAL CHARACTERISTICS CURVES 1.00E-04 1 1.00E-05 150℃ 1.00E-06 85℃ IR(A) IF,Forward Current(A) 0.1 0.01 25℃ 1.00E-07 -55℃ 150℃ 1.00E-08 0.001 -55℃,25℃,85℃ 1.00E-09 0.0001 1.00E-10 0.4 0.6 0.8 1 VF,Forward Voltage(V) 1.2 0 10 20 30 40 50 VR(V) 60 70 80 IR vs. VR IF vs. VF 2 f=1MHz Ta=25℃ 1.8 CT,Capacitor(pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 VR,Reverse Voltage(V) 50 CT vs. VR Leshan Radio Company, LTD. Rev.B Oct. 2019 3/4 LBAV170LT1G,S-LBAV170LT1G Surface Mount Low Leakge Diode 6.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 7.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Oct. 2019 4/4