LBAV70LT3G

LBAV70LT1G S-LBAV70LT1G Monolithic Dual Switching Diode Common Cathode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70LT1G A4 3000/Tape&Reel LBAV70LT3G A4 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage VR 70 V Forward Current IF 200 mA Repetitive Peak Forward Current IFRM 500 Non-Repetitive Peak Forward Current t=1μs IFSM mA A Parameter 2 1 t=1ms 0.5 t=1s 4. THERMAL CHARACTERISTICS Parameter Limits Unit FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC RΘJA RΘJC 556 200 ºC/W TJ,Tstg −55∼+150 ºC Total Device Dissipation, Thermal Resistance (Note 1) Junction and Storage temperature Symbol PD 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.C Nov 2018 1/4 LBAV70LT1G, S-LBAV70LT1G Monolithic Dual Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Symbol Characteristic Reverse Breakdown Voltage VBR (I(BR)=100μA) Min. Typ. Max. 70 - - VF Forward Voltage mV (IF = 1.0 mAdc) - - 715 (IF = 10 mAdc) - - 855 (IF = 50 mAdc) - - 1000 (IF = 150 mAdc) - - 1250 μA IR Reverse Voltage Leakage Current - - 2.5 (VR = 70Vdc,TJ = 150°C) - - 100 (VR = 25Vdc,TJ = 150°C) - - 60 (VR = 70Vdc) Diode Capacitance CD (VR = 0V, f = 1.0 MHz) Reverse Recovery Time (IF=IR=10mAdc,IR(REC)=1.0 mAdc,RL =100Ω ) Leshan Radio Company, LTD. trr Rev.C Nov 2018 Unit V pF - - 1.5 ns - - 6.0 2/4 LBAV70LT1G, S-LBAV70LT1G Monolithic Dual Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 100 1000 150℃ 150℃ 10 IF,Forward Currentm(A) IR,Reverse Current(uA) 85℃ 100 25℃ 10 -55℃ 1 85℃ 1 0.1 25℃ 0.01 -55℃ 0.001 0.1 0.0001 0 0.2 0.4 0.6 0.8 VF,Forward Voltage(V) 1 1.2 Forward Characteristics 0 10 20 30 40 50 VR,Reverse Voltage(V) 60 70 Reverse Characteristics 0.88 f=1MHz 0.86 0.84 Cj(pF) 0.82 0.80 0.78 0.76 0.74 0 1 2 3 4 5 6 VR，Reverse Voltage(V) 7 8 Capacitor Characteristics Leshan Radio Company, LTD. Rev.C Nov 2018 3/4 LBAV70LT1G, S-LBAV70LT1G Monolithic Dual Switching Diode 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Nov 2018 4/4