LBAV70WT1G

LBAV70WT1G S-LBAV70WT1G Dual Switching Diode 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● SC70(SOT-323) For high-speed switching applications. 2. DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel S-LBAV70WT1G A4 3000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Parameter Peak Forward Surge Current 4. THERMAL CHARACTERISTICS Parameter Symbol Total Device Dissipation, Limits Unit PD FR−5 Board (Note 1) @ TA = 25ºC 200 mW Derate above 25ºC 1.6 625 mW/ºC ºC/W RΘJA Thermal Resistance Junction–to–Ambient Total Device Dissipation, PD Alumina Substrate (Note 2) @ TA = 25°C 300 mW Derate above 25ºC 2.4 mW/ºC Thermal Resistance Junction–to–Ambient RΘJA TJ,Tstg Junction and Storage temperature 417 ºC/W −55∼+150 ºC 1.FR–5 = 1.0 × 0.75 × 0.062 in. 2.Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.O Mar. 2017 1/4 LBAV70WT1G, S-LBAV70WT1G Dual Switching Diode 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Reverse Breakdown Voltage VBR (I(BR)=100μA) Min. Typ. Max. Unit V 70 - - - - 5.0 μA - - 100 nA Reverse Voltage Leakage Current IR (VR = 70V) (VR = 50V) Diode Capacitance CD (VR = 0V, f = 1.0 MHz) pF - - 1.5 mV Forward Voltage (IF = 1.0 mA) VF (IF = 10 mA) - - 715 - - 855 (IF = 50 mA) - - 1000 (IF = 150 mA) - - 1250 Reverse Recovery Time (IF=IR=10mA, RL=100Ohm, IR(REC)=1.0 mA) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) trr VRF ns - - 6.0 V - - 1.75 3.For each individual diode while the seeond diode is unbiased. Leshan Radio Company, LTD. Rev.O Mar. 2017 2/4 LBAV70WT1G, S-LBAV70WT1G Dual Switching Diode 6.ELECTRICAL CHARACTERISTICS CURVES 1E-02 1E-04 150℃ 150℃ 85℃ 25℃ -55℃ 1E-03 IR,Reverse Current(A) IF,Forward Current(A) 1E-05 1E-06 85℃ 1E-07 25℃ 1E-08 1E-09 1E-04 -55℃ 1E-10 0.1 0.3 0.5 0.7 VF,Forward Voltage(V) 0.9 0 10 20 30 40 VR,Reverse Voltage(V) 50 60 IR vs. VR IF vs. VF 1000 CT,Capacitor(fF) 980 f=1MHz Ta=25℃ 960 940 920 900 880 860 0 2 4 6 VR,Reverse Voltage(V) 8 Capacitance Leshan Radio Company, LTD. Rev.O Mar. 2017 3/4 LBAV70WT1G, S-LBAV70WT1G Dual Switching Diode 7.OUTLINE AND DIMENSIONS SC70 DIM MIN NOR MAX A 0.80 0.95 1.00 A1 0.00 0.05 0.7 REF 0.10 0.30 0.35 0.40 A2 b c 0.10 0.15 0.25 D 1.80 2.05 2.20 E 1.15 1.30 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.20 0.35 0.56 He 2.00 2.10 2.40 ALL Dimension in mm 8.SOLDERING FOOTPRINT SC70 Leshan Radio Company, LTD. Rev.O Mar. 2017 DIM MIN A 1.90 B 0.65 C 0.65 X 0.70 Y 0.90 4/4