LBAV99LT1

LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode 1 ANODE 3 CAHODE/ANODE 2 CATHODE LBAV99LT1 3 1 2 DEVICE MARKING LBAV99LT1 = A7 SOT–23 Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C Unit Vdc mAdc mAdc V mA mA A MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 µ s t = 1.0 ms t = 1.0 S THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (1) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR) IR Min 70 — –– –– — –– — –– –– — — Max — 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Unit Vdc µAdc OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100 µA) Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100Ω ) (Figure 1) Forward Recovery Voltage (I F = 10 mA, t r = 20 ns) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. CD V F pF mVdc t rr V FR ns V LBAV99LT1–1/3 LESHAN RADIO COMPANY, LTD. LBAV99LT1 +10 V 820 Ω 2.0 k 0.1µF tr t t IF t rr t p 100 µH IF 10% 0.1 µF 50 Ω OUTPUT PULSE GENERATOR D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL VR IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE 100 10 I F , FORWARD CURRENT (mA) T A = 85°C 10 I R , REVERSE CURRENT (µA) T A = 150°C 1.0 T A = 125°C T A = – 40°C 0.1 T A = 85°C T A = 55°C 1.0 T A = 25°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 T A = 25°C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D ,TOTAL CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance LBAV99LT1–2/3 LESHAN RADIO COMPANY, LTD. LBAV99LT1 SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. CAHODE 3. CAHODE/ANODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBAV99LT1-3/3