LBC807-25WT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-25WT1G S-LBC807-25WT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO(max) = -45 V. ƽGeneral purpose switching and amplification. ƽPNP complement: LBC807 Series. 3 ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device LBC807-25WT1G S-LBC807-25WT1G LBC807-25WT3G S-LBC807-25WT3G Marking Shipping 5B 3000/Tape&Reel 5B 10000/Tape&Reel SOT–323 3 COLLECTOR 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50 V Emitter–Base Voltage V –5.0 V –500 mAdc Collector Current — Continuous EBO IC 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (1) T A =25 °C Derate above 25°C PD 150 mW Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1.2 mW/°C 833 °C/W PD 200 mW R θJA T J , Tstg 1.6 625 –55to+150 mW/°C °C/W °C R θJA 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBC807-25WT1G S-LBC807-25WT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)CEO –45 — — V V(BR)CES –50 — — V (I E = –1.0 µA) V(BR)EBO –5.0 — — V Collector Cutoff Current I CBO (V CB = –20 V) — — –100 nA (V CB = –20 V, TJ = 150°C) — — –5.0 µA Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mA) Collector–Emitter Breakdown Voltage (V EB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ ON CHARACTERISTICS DC Current Gain (IC= –100 mA, VCE = –1.0 V) Collector–Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA) Base–Emitter On Voltage h FE 160 — 400 — V CE(sat) — — –0.7 V V — — –1.2 V fT 100 — — MHz C obo — 10 — pF BE(on) (IC = –500 mA, V CE = –1.0 V) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LBC807-25WT1G S-LBC807-25WT1G SC−70 (SOT−323) D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M
1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “
”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm 
inches Rev.O 3/3