LBC807-40WT1G
S-LBC807-40WT1G
PNP Silicon General Purpose Transistors
1. FEATURES
●
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
SC70(SOT-323)
qualified and PPAP capable.
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBC807-40WT1G
YL
3000/Tape&Reel
LBC807-40WT3G
YL
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Symbol
Limits
Unit
Collector–Emitter Voltage
Parameter
VCEO
-45
V
Collector–Base Voltage
VCBO
-50
V
Emitter–Base Voltage
VEBO
-5
V
IC
-500
mA
Collector Current(Continuous)
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
150
Unit
mW
1.2
833
mW/°C
200
mW
mW/°C
RθJA
1.6
625
TJ,Tstg
-55~+150
°C
Total Device Dissipation FR–5 Board (Note 1)
PD
TA = 25°C
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Total Device Dissipation
°C/W
PD
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
°C/W
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
Leshan Radio Company, LTD.
Rev.B Aug. 2017
1/5
LBC807-40WT1G, S-LBC807-40WT1G
PNP Silicon General Purpose Transistors
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = -10 mA)
Collector–Emitter Breakdown Voltage
(IC = -10 µA, VEB = 0)
Emitter–Base Breakdown Voltage
(IE = -1.0 µA)
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
Min.
Typ.
Max.
-45
-
-
-50
-
-
-5
-
-
-
-
-100
-5
250
-
600
40
-
-
-
-
-0.7
-
-
-1.2
100
-
-
-
10
-
Unit
V
V
V
Collector Cutoff Current
(VCB = -20 V)
ICBO
(VCB = -20 V, TA= 150°C)
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
hFE
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
Base–Emitter Voltage
(IC = –500 mA, VCE = –1.0 V)
VCE(sat)
VBE(on)
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = -10 mA, VCE = -5.0 V, f = 100 MHz)
Output Capacitance
(VCB = -10 V, f = 1.0 MHz)
Leshan Radio Company, LTD.
fT
Cobo
Rev.B Aug. 2017
MHz
pF
2/5
LBC807-40WT1G, S-LBC807-40WT1G
PNP Silicon General Purpose Transistors
6.ELECTRICAL CHARACTERISTICS CURVES
1
1000
VCE=1V
900
0.9
-55℃
0.8
800
150℃
0.7
700
VBE(V)
600
HFE
VCE=1V
25℃
500
25℃
0.6
0.5
150℃
400
0.4
300
0.3
-55℃
200
0.2
100
0.1
0
0.005
0.05
IC,Collector Current(A)
0
0.005
0.5
0.05
IC,Collector Current(A)
HFE vs. IC
VBE vs. IC
1
0.9
5
IC/IB=10
-55℃
4.5
0.8
25℃
0.7
IC=100mA
A
3.5
0.6
150℃
0.5
0.4
3
2.5
1.5
0.2
1
0.1
0.5
0.05
IC,Collector Current(A)
0.5
0
0.00001
IC=500mA
0.0001
0.001
0.01
0.1
IB,Base Current(A)
VBESAT vs. IC
Leshan Radio Company, LTD.
IC=300mA
2
0.3
0
0.005
IC=10mA
4
VCESAT(V)
VBESAT(V)
0.5
VCESAT vs. IB
Rev.B Aug. 2017
3/5
LBC807-40WT1G, S-LBC807-40WT1G
PNP Silicon General Purpose Transistors
6.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.25
70
IC/IB=10
f=1MHz
Ta=25℃
60
0.2
0.15
CT,Capacitor(pF)
VCESAT(V)
150℃
25℃
0.1
50
40
Cibo
30
20
-55℃
0.05
10
0
5.00E-03
Cobo
0
5.00E-02
IC,Collector Current(A)
5.00E-01
0
30
CT vs. VR
VCESAT vs. IC
Leshan Radio Company, LTD.
10
20
VR,Reverse Voltage(V)
Rev.B Aug. 2017
4/5
LBC807-40WT1G, S-LBC807-40WT1G
PNP Silicon General Purpose Transistors
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
DIM MIN
A 0.80
A1
0.00
A2
b
NOM
MAX
NOM
MAX
0.90
1.00
0.032 0.035 0.039
0.05
0.10
0.000 0.002 0.004
0.70REF
0.30
MIN
0.35
0.028REF
0.40
0.012 0.014 0.016
c
0.10
0.18
0.25
0.004 0.007 0.010
D
1.80
2.10
2.20
0.071 0.083 0.087
E
1.15
1.24
1.35
0.045 0.049 0.053
e
1.20
1.30
1.40
0.047 0.051 0.055
e1
L
HE
0.65REF
0.026REF
0.20
0.38
0.56
0.008 0.015 0.022
2.00
2.10
2.40
0.079 0.083 0.095
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.B Aug. 2017
5/5
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