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LBC807-40WT1G

LBC807-40WT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-323

  • 描述:

    三极管 PNP Ic=500mA Vceo=45V hfe=250~600 P=150mW SOT323

  • 数据手册
  • 价格&库存
LBC807-40WT1G 数据手册
LBC807-40WT1G S-LBC807-40WT1G PNP Silicon General Purpose Transistors 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBC807-40WT1G YL 3000/Tape&Reel LBC807-40WT3G YL 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO -45 V Collector–Base Voltage VCBO -50 V Emitter–Base Voltage VEBO -5 V IC -500 mA Collector Current(Continuous) 4. THERMAL CHARACTERISTICS Parameter Symbol Limits 150 Unit mW 1.2 833 mW/°C 200 mW mW/°C RθJA 1.6 625 TJ,Tstg -55~+150 °C Total Device Dissipation FR–5 Board (Note 1) PD TA = 25°C Derate above 25°C RθJA Thermal Resistance, Junction to Ambient Total Device Dissipation °C/W PD Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature °C/W 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.B Aug. 2017 1/5 LBC807-40WT1G, S-LBC807-40WT1G PNP Silicon General Purpose Transistors 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = -10 mA) Collector–Emitter Breakdown Voltage (IC = -10 µA, VEB = 0) Emitter–Base Breakdown Voltage (IE = -1.0 µA) Symbol V(BR)CEO V(BR)CES V(BR)EBO Min. Typ. Max. -45 - - -50 - - -5 - - - - -100 -5 250 - 600 40 - - - - -0.7 - - -1.2 100 - - - 10 - Unit V V V Collector Cutoff Current (VCB = -20 V) ICBO (VCB = -20 V, TA= 150°C) nA µA ON CHARACTERISTICS DC Current Gain (IC = –100 mA, VCE = –1.0 V) hFE (IC = –500 mA, VCE = –1.0 V) Collector–Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA) Base–Emitter Voltage (IC = –500 mA, VCE = –1.0 V) VCE(sat) VBE(on) V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Leshan Radio Company, LTD. fT Cobo Rev.B Aug. 2017 MHz pF 2/5 LBC807-40WT1G, S-LBC807-40WT1G PNP Silicon General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES 1 1000 VCE=1V 900 0.9 -55℃ 0.8 800 150℃ 0.7 700 VBE(V) 600 HFE VCE=1V 25℃ 500 25℃ 0.6 0.5 150℃ 400 0.4 300 0.3 -55℃ 200 0.2 100 0.1 0 0.005 0.05 IC,Collector Current(A) 0 0.005 0.5 0.05 IC,Collector Current(A) HFE vs. IC VBE vs. IC 1 0.9 5 IC/IB=10 -55℃ 4.5 0.8 25℃ 0.7 IC=100mA A 3.5 0.6 150℃ 0.5 0.4 3 2.5 1.5 0.2 1 0.1 0.5 0.05 IC,Collector Current(A) 0.5 0 0.00001 IC=500mA 0.0001 0.001 0.01 0.1 IB,Base Current(A) VBESAT vs. IC Leshan Radio Company, LTD. IC=300mA 2 0.3 0 0.005 IC=10mA 4 VCESAT(V) VBESAT(V) 0.5 VCESAT vs. IB Rev.B Aug. 2017 3/5 LBC807-40WT1G, S-LBC807-40WT1G PNP Silicon General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.25 70 IC/IB=10 f=1MHz Ta=25℃ 60 0.2 0.15 CT,Capacitor(pF) VCESAT(V) 150℃ 25℃ 0.1 50 40 Cibo 30 20 -55℃ 0.05 10 0 5.00E-03 Cobo 0 5.00E-02 IC,Collector Current(A) 5.00E-01 0 30 CT vs. VR VCESAT vs. IC Leshan Radio Company, LTD. 10 20 VR,Reverse Voltage(V) Rev.B Aug. 2017 4/5 LBC807-40WT1G, S-LBC807-40WT1G PNP Silicon General Purpose Transistors 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.80 A1 0.00 A2 b NOM MAX NOM MAX 0.90 1.00 0.032 0.035 0.039 0.05 0.10 0.000 0.002 0.004 0.70REF 0.30 MIN 0.35 0.028REF 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 L HE 0.65REF 0.026REF 0.20 0.38 0.56 0.008 0.015 0.022 2.00 2.10 2.40 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Aug. 2017 5/5
LBC807-40WT1G 价格&库存

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LBC807-40WT1G
  •  国内价格
  • 1+0.09240
  • 30+0.08910
  • 100+0.08580
  • 500+0.07920
  • 1000+0.07590
  • 2000+0.07392

库存:2170