LBC817-25DPMT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G MAXIMUM RATING - NPN Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V IC 500 mAdc Collector Current − Continuous SOT23-6 MAXIMUM RATING - PNP Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage VCBO −50 V Emitter − Base Voltage VEBO −5.0 V IC −500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 6 5 Q1 4 Q2 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 2 3 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION DEVICE LBC817–16DPMT1G S-LBC817–16DPMT1G LBC817–16DPMT3G S-LBC817–16DPMT3G LBC817–25DPMT1G S-LBC817–25DPMT1G LBC817–25DPMT3G S-LBC817–25DPMT3G LBC817–40DPMT1G S-LBC817–40DPMT1G LBC817–40DPMT3G S-LBC817–40DPMT3G MARKING 56A SHIPPING 3000/Tape & Reel 56A 10,000/Tape & Reel 56B 3000/Tape & Reel 56B 10,000/Tape & Reel 56C 3000/Tape & Reel 56C 10,000/Tape & Reel Rev.B 1/5 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G ELECTRICAL CHARACTERISTICS(NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) V(BR)CES 50 − − V Emitter−Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.0 nA mA 100 160 250 40 − − − − 250 400 600 − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) BC817−16 BC817−25 BC817−40 hFE − Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V Base −Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V fT 100 − − MHz Cobo − 10 − pF Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −50 − − V Emitter−Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA mA 100 160 250 40 − − − − 250 400 600 − SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) ELECTRICAL CHARACTERISTICS(PNP) (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) BC807−16 BC807−25 BC807−40 hFE (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, IB = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Rev.B 2/5 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL NPN CHARACTERISTICS hFE, DC CURRENT GAIN 1000 VCE = 1 V TJ = 25°C 100 10 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 1.0 TJ = 25°C 0.8 0.6 IC = 10 mA 0.4 θV, TEMPERATURE COEFFICIENTS (mV/ °C) VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) 500 mA 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 10 100 IC, COLLECTOR CURRENT (mA) +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages 1000 Figure 4. Temperature Coefficients 100 1 1 ms 10 ms 100 ms 1s Thermal Limit 0.1 Cib IC (A) C, CAPACITANCE (pF) 100 Figure 2. Saturation Region 1.0 1 300 mA 0.2 Figure 1. DC Current Gain TA = 25°C 100 mA 10 0.01 Cob Single Pulse Test @ TA = 25°C 1 0.1 0.001 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 100 0.01 0.1 1 VCE (Vdc) 10 Figure 6. BC817−40L Safe Operating Area Rev.B 3/5 100 LESHAN RADIO COMPANY, LTD. LBC817-16DPMT1G LBC817-25DPMT1G LBC817-40DPMT1G S-LBC817-16DPMT1G S-LBC817-25DPMT1G S-LBC817-40DPMT1G TYPICAL PNP CHARACTERISTICS 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25°C 100 10 -0.1 -10 -100 -1.0 IC, COLLECTOR CURRENT (mA) -1000 -1.0 -1.0 TA = 25°C TJ = 25°C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 0 -1.0 -100 Figure 2. Saturation Region -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 3. “On” Voltages 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/ °C) VBE(sat) @ IC/IB = 10 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Figure 4. Temperature Coefficients -1000 Cib 10 Cob 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Rev.B 4/5 -100 LESHAN RADIO COMPANY, LTD. OUTLINE AND DIMENSIONS DIM A A1 b c D E e e1 L L1 HE θ SOT23-6 MIN NOR MAX 0.90 1.00 1.10 0.01 0.06 0.10 0.25 0.40 0.50 0.10 0.17 0.26 2.80 2.90 3.10 1.30 1.60 1.70 0.85 0.95 1.05 1.80 1.90 2.00 0.20 0.40 0.60 0.60REF 2.50 2.80 3.00 0º – 10º SOLDERING FOOTPRINT SOT23-6 DIM (mm) X 0.70 Y 0.90 A 2.40 B 0.95 C 0.95 Rev.B 5/5