LBC817-25WT1G

LBC817-25WT1G S-LBC817-25WT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBC817-25WT1G 6B 3000/Tape&Reel LBC817-25WT3G 6B 10000/Tape&Reel 3 COLLECTOR 1 BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 45 Vdc Collector–Base Voltage VCBO 50 Vdc Emitter–Base Voltage VEBO 5 Vdc IC 500 mAdc Symbol Limits Unit Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 150 mW Derate above 25ºC 1.2 mW/ºC 833 ºC/W Thermal Resistance, RΘJA Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/5 LBC817-25WT1G, S-LBC817-25WT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.0 μAdc, IC = 0) Symbol VBR(CEO) VBR(CBO) VBR(EBO) Min. Typ. Max. 45 - - Unit V V 50 - V 5 - - - - 100 nA - - 5 μA 160 - 400 Collector Cutoff Current ( VCB = 20 Vdc) ICBO ( VCB = 20 Vdc,TA=150°C) DC Current Gain HFE (IC = 100 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter Saturation Voltage - (IC = 10mAdc, VCE= 5Vdc, f = 100MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Leshan Radio Company, LTD. - 0.7 VBE(sat) (IC = 500 mAdc, VCE = 1.0 Vdc) Current–Gain — Bandwidth Product V V - fT Cob Rev.B Mar 2016 - 1.2 MHz 100 - pF - 10 - 2/5 LBC817-25WT1G, S-LBC817-25WT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 400 0.35 350 VCE(sat),Collector Emitter Saturation Voltage(V) VCE=1V 150℃ 300 HFE,DC Gain 250 25℃ 200 150 -55℃ 100 50 0 0.001 0.01 0.1 IC, Collector Current(A) IC/IB=10 0.3 0.25 150℃ 0.2 25℃ 0.15 -55℃ 0.1 0.05 0 0.001 1 0.01 0.1 IC Collector Current(A) VCE(sat) vs. IC DC Current Gain vs. Collector Current 1.2 1.2 VCE=5V IC/IB=10 1 VBE(on),Base Emitter Voltage(V) VBE(sat),Base Emitter Saturation Voltage(V) 1 -55℃ 0.8 25℃ 0.6 0.4 150℃ 0.2 0 0.0001 0.001 0.01 0.1 IC,Colltector Current(A) 1 1 -55℃ 0.8 25℃ 0.6 150℃ 0.4 0.2 0 0.001 1 VBE(on) vs. IC VBE(sat) vs. IC Leshan Radio Company, LTD. 0.01 0.1 IC,Colltor Current(A) Rev.B Mar 2016 3/5 LBC817-25WT1G, S-LBC817-25WT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 60 1 f=1MHz IC=300mA 50 VCE,Colletor-Emitter-Voltage(V) 0.8 IC=500mA C,Capacitance (pF) Cib 0.6 IC=100mA 0.4 0.2 40 30 20 10 Cob IC=10mA 0 0.01 0 0.1 1 10 IB,Base Current(mA) 100 0.1 100 Capacitance Collector Saturation Region Leshan Radio Company, LTD. 1 10 VR,Reverse Voltage (V) Rev.B Mar 2016 4/5 LBC817-25WT1G, S-LBC817-25WT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.80 A1 0.00 A2 NOM MAX 0.90 1.00 0.032 0.035 0.039 0.05 0.10 0.000 0.002 0.004 0.70REF MIN NOM MAX 0.028REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 L HE 0.65REF 0.026REF 0.20 0.38 0.56 0.008 0.015 0.022 2.00 2.10 2.40 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 5/5