LBC817-40WT1G

LBC817-40WT1G S-LBC817-40WT1G NPN Silicon General Purpose Transistors 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBC817-40WT1G YM 3000/Tape&Reel LBC817-40WT3G YM 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 45 V Collector–Base Voltage VCBO 50 V Emitter–Base Voltage VEBO 5 V IC 500 mA Collector Current(Continuous) 4. THERMAL CHARACTERISTICS Parameter Symbol Limits 150 Unit mW 1.2 833 200 mW/°C mW/°C RθJA 1.6 625 TJ,Tstg -55~+150 °C Total Device Dissipation FR–5 Board (Note 1) PD TA = 25°C Derate above 25°C RθJA Thermal Resistance, Junction to Ambient Total Device Dissipation °C/W mW PD Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature °C/W 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Leshan Radio Company, LTD. Rev.B Aug. 2017 1/5 LBC817-40WT1G, S-LBC817-40WT1G NPN Silicon General Purpose Transistors 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Emitter–Base Breakdown Voltage (IE = 1.0 µA) Symbol V(BR)CEO V(BR)CES V(BR)EBO Min. Typ. Max. 45 - - 50 - - 5 - - - - 100 5 250 - 600 40 - - - - 0.7 - - 1.2 100 - - - 10 - Unit V V V Collector Cutoff Current (VCB = 20 V) ICBO (VCB = 20 V, TA = 150°C) nA µA ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE (IC = 500 mA, VCE = 1.0 V) Collector–Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base–Emitter Voltage (IC = 500 mA, VCE = 1.0 V) VCE(sat) VBE(on) V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Leshan Radio Company, LTD. fT Cobo Rev.B Aug. 2017 MHz pF 2/5 LBC817-40WT1G, S-LBC817-40WT1G NPN Silicon General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES 600 1 150℃ VCE=1V VCE=1V 0.9 500 55℃ 0.8 0.7 25℃ VBE(V) HFE 400 300 25℃ 0.6 150 ℃ 0.5 -55℃ 0.4 200 0.3 100 0.2 0 0.005 0.05 IC,Collector Current(A) 0.1 0.005 0.5 2 1 IC/IB=10 IC=10mA IC=100mA 1.6 0.8 VBESAT(V) 1.2 1 -55℃ 0.9 IC=300mA 1.4 VCE(V) 0.5 VBE vs. IC HFE vs. IC 1.8 0.05 IC,Collector Current(A) IC=500mA 0.8 0.7 25℃ 150 ℃ 0.6 0.6 0.4 0.5 0.2 0 0.00001 0.0001 0.001 0.01 IB,Base Current(A) 0.1 0.4 0.005 0.5 VBESAT vs. IC VCESAT vs. IB Leshan Radio Company, LTD. 0.05 Collector Current Rev.B Aug. 2017 3/5 LBC817-40WT1G, S-LBC817-40WT1G NPN Silicon General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 60 0.16 IC/IB=10 0.14 50 0.12 150℃ 40 0.1 Cobo(pF) VCESAT(V) f=1MHz Ta=25℃ 25℃ 0.08 Cibo 30 0.06 20 -55℃ 0.04 10 0.02 0 0.005 0.05 0.5 Cobo 0 0 IC,Collector Current(A) 30 Capacitance VCESAT vs. IC Leshan Radio Company, LTD. 10 20 VR,Reverse Voltage(V) Rev.B Aug. 2017 4/5 LBC817-40WT1G, S-LBC817-40WT1G NPN Silicon General Purpose Transistors 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.80 A1 0.00 A2 b NOM MAX NOM MAX 0.90 1.00 0.032 0.035 0.039 0.05 0.10 0.000 0.002 0.004 0.70REF 0.30 MIN 0.35 0.028REF 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 L HE 0.65REF 0.026REF 0.20 0.38 0.56 0.008 0.015 0.022 2.00 2.10 2.40 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Aug. 2017 5/5