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LBC846BDW1T1G

LBC846BDW1T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-363

  • 描述:

    2个NPN 集射极击穿电压(Vceo):65V 集电极电流(Ic):100mA 功率(Pd):380mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):600mV@100mA,5mA 直流电...

  • 数据手册
  • 价格&库存
LBC846BDW1T1G 数据手册
LBC846BDW1T1G S-LBC846BDW1T1G Dual General Purpose Transistors NPN Duals 1. FEATURES ● SC88(SOT-363) We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES Shipping Device Marking LBC846BDW1T1G 1B 3000/Tape&Reel LBC846BDW1T3G 1B 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage VCEO 65 V Collector–Base Voltage VCBO 80 V Emitter–Base Voltage VEBO 6 V IC 100 mA Symbol Limits Unit PD 380 mW 250 mW 3 mW/ºC RΘJA 328 ºC/W TJ,Tstg −55∼+150 ºC Parameter Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Per Device FR– 5 Board(Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Leshan Radio Company, LTD. Rev.A Sep. 2017 1/5 LBC846BDW1T1G, S-LBC846BDW1T1G Dual General Purpose Transistors 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA) Symbol VBR(CEO) VBR(CES) VBR(CBO) VBR(EBO) Min. Typ. Max. 65 - - Unit V V 80 - V 80 - V 6 - - - - 15 nA - - 5 µA 200 290 450 Collector-Base Cutoff Current (VCB = 30 V) ICBO (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain HFE (IC = 2.0 mA, VCE = 5 V) Collector–Emitter Saturation Voltage VCE(sat) (IC = 10 mA, IB = 0.5 mA) V - - 0.25 - - 0.6 (IC = 10 mA, IB = 0.5 mA) - 0.7 - (IC = 100 mA, IB = 5.0 mA) - 0.9 - (IC = 100 mA, IB = 5.0 mA) Base–Emitter Saturation Voltage Base–Emitter Voltage VBE(sat) V VBE(on) mV (IC = 2.0 mA, VCE = 5.0 V) 580 660 700 (IC = 10 mA, VCE = 5.0 V) - - 770 Current–Gain — Bandwidth Product fT (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Output Capacitance 100 - - - - 4.5 Cobo (VCB = 10 V, f = 1.0 MHz) Noise Figure MHz pF NF dB (IC= 0.2 mA, VCE=5.0 V, RS=2.0 kΩ, f = 1.0 kHz,BW = 200 Hz) Leshan Radio Company, LTD. - Rev.A Sep. 2017 - 10 2/5 LBC846BDW1T1G, S-LBC846BDW1T1G Dual General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES 600 700 VCE=5V VCE=10V 600 150℃ 500 150 ℃ 500 HFE HFE 400 25℃ 300 400 25℃ 300 200 -55℃ 200 100 0 0.0001 100 0.001 0.01 IC,Collector Current(A) 0 0.0002 0.1 HFE vs. IC 0.2 1 0.9 0.9 -55℃ 0.8 -55℃ 0.8 VBE,Base Emittor Voltage(V) VBE,Base Emittor Voltage(V) 0.002 0.02 IC,Collector Current(A) HFE vs. IC (VCE=10V) 1 0.7 25℃ 0.6 0.5 150 ℃ 0.4 0.3 0.2 VCE=5V 0.1 0 0.0002 - 55℃ 0.002 0.02 0.7 0.6 0.5 0.4 150℃ 0.3 0.2 0.1 0.2 0 0.0001 IC,Collector Current(A) 0.001 0.01 IC,Collector Current(A) 0.1 VBE(on) vs. IC VBE(on) vs. IC Leshan Radio Company, LTD. 25℃ Rev.A Sep. 2017 3/5 LBC846BDW1T1G, S-LBC846BDW1T1G Dual General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.2 IC/IB=10 1 1.6 - 55℃ 0.9 0.7 25℃ 0.6 1.2 150 ℃ 0.4 0.3 0.2 0.2 0 0.00002 0.0002 0.002 IB,Base Current(A) 0.02 VCESAT vs. IB VBESAT vs. IC Leshan Radio Company, LTD. 10mA 0.6 0.4 0.002 0.02 IC,Collector Current(A) 20mA 200mA 100mA 1 0.8 0.5 50mA 1.4 0.8 0.2 0.0002 Ta=25 ℃ 1.8 VCESAT(V) VBESAT,Base Emittor Voltage(V) 1.1 2 Rev.A Sep. 2017 4/5 LBC846BDW1T1G, S-LBC846BDW1T1G Dual General Purpose Transistors 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC 0.46 0.010 0.014 0.018 L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Sep. 2017 5/5
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