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LBC847BDW1T1G

LBC847BDW1T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT363

  • 描述:

    15nA 45V 380mW 180@2mA,5V 100mA 100MHz 600mV@100mA,5mA 2 NPN -55℃~+150℃@(Tj) SC-88

  • 数据手册
  • 价格&库存
LBC847BDW1T1G 数据手册
LBC847BDW1T1G S-LBC847BDW1T1G NPN Dual General Purpose Transistors 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring SC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBC847BDW1T1G 1F 3000/Tape&Reel LBC847BDW1T3G 1F 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol VCEO Limits 45 Unit Collector–Base Voltage VCBO 50 V Emitter–Base Voltage Collector Current(Continuous) VEBO IC 6 100 V mA Parameter Collector–Emitter Voltage V 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation FR– 5 Board, (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Leshan Radio Company, LTD. Symbol PD Limits 380 Unit 250 mW 3 mW RθJA 328 mW/ºC ºC/W TJ,Tstg −55∼+150 ºC Rev.A Sep. 2017 1/5 LBC847BDW1T1G, S-LBC847BDW1T1G NPN Dual General Purpose Transistors 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA) Symbol V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO Min. Typ. Max. 45 - - 50 - - 50 - - 6 - - - - 15 5 200 290 450 - - 0.25 - - 0.6 - 0.7 - - 0.9 - 580 660 700 - - 770 100 - - - - 4.5 - - 10 Unit V V V V Collector Cutoff Current (VCB = 30 V) ICBO (VCB = 30 V, TA = 150°C) nA µA ON CHARACTERISTICS DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) hFE Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) (IC = 100 mA, IB = 5.0 mA) V Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) (IC = 100 mA, IB = 5.0 mA) V Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) (IC = 10 mA, VCE = 5.0 V) mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure(IC = 0.2 mA,VCE = 5.0 V, RS = 2.0 kΩ, f = 1.0 KHz, BW = 200 Hz) Leshan Radio Company, LTD. fT Cobo NF Rev.A Sep. 2017 MHz pF dB 2/5 LBC847BDW1T1G, S-LBC847BDW1T1G NPN Dual General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES 600 700 VCE=5V VCE=10V 600 150℃ 500 150 ℃ 500 HFE HFE 400 25℃ 300 400 25℃ 300 200 -55℃ 200 100 0 0.0001 100 0.001 0.01 IC,Collector Current(A) 0 0.0002 0.1 HFE vs. IC 0.2 1 0.9 0.9 -55℃ 0.8 -55℃ 0.8 VBE,Base Emittor Voltage(V) VBE,Base Emittor Voltage(V) 0.002 0.02 IC,Collector Current(A) HFE vs. IC (VCE=10V) 1 0.7 25℃ 0.6 0.5 150 ℃ 0.4 0.3 0.2 VCE=5V 0.1 0 0.0002 - 55℃ 0.002 0.02 0.7 0.6 0.5 0.4 150℃ 0.3 0.2 0.1 0.2 0 0.0001 IC,Collector Current(A) 0.001 0.01 IC,Collector Current(A) 0.1 VBE(on) vs. IC VBE(on) vs. IC Leshan Radio Company, LTD. 25℃ Rev.A Sep. 2017 3/5 LBC847BDW1T1G, S-LBC847BDW1T1G NPN Dual General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.2 IC/IB=10 1 1.6 - 55℃ 0.9 0.7 25℃ 0.6 1.2 150 ℃ 0.4 0.3 0.2 0.2 0 0.00002 0.0002 0.002 IB,Base Current(A) 0.02 VCESAT vs. IB VBESAT vs. IC Leshan Radio Company, LTD. 10mA 0.6 0.4 0.002 0.02 IC,Collector Current(A) 20mA 200mA 100mA 1 0.8 0.5 50mA 1.4 0.8 0.2 0.0002 Ta=25 ℃ 1.8 VCESAT(V) VBESAT,Base Emittor Voltage(V) 1.1 2 Rev.A Sep. 2017 4/5 LBC847BDW1T1G, S-LBC847BDW1T1G NPN Dual General Purpose Transistors 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.A Sep. 2017 5/5
LBC847BDW1T1G 价格&库存

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LBC847BDW1T1G
    •  国内价格
    • 1+0.21132
    • 100+0.14268
    • 1000+0.12886
    • 1500+0.10935
    • 3000+0.09890

    库存:1870

    LBC847BDW1T1G
    •  国内价格
    • 20+0.29240
    • 100+0.24160
    • 300+0.15600
    • 800+0.12710
    • 3000+0.08480

    库存:776411

    LBC847BDW1T1G
      •  国内价格
      • 1+0.09250

      库存:2880

      LBC847BDW1T1G
      •  国内价格
      • 20+0.11681
      • 200+0.10881
      • 500+0.10081
      • 1000+0.09280
      • 3000+0.08880
      • 6000+0.08320

      库存:2742