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LBC856BDW1T1G

LBC856BDW1T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-363

  • 描述:

    通用三极管 SOT363 PNP IC=100mA hFE=220

  • 数据手册
  • 价格&库存
LBC856BDW1T1G 数据手册
LBC856BDW1T1G S-LBC856BDW1T1G Dual General Purpose Transistors 1. FEATURES ● We declare that the material of product compliance with SC88(SOT-363) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 (3) (2) (1) qualified and PPAP capable. Q1 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBC856BDW1T1G 3B 3000/Tape&Reel LBC856BDW1T3G 3B 10000/Tape&Reel Q2 (4) (5) (6) 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -65 V Collector–Base Voltage VCBO -80 V Emitter–Base Voltage Collector Current(Continuous) VEBO IC -5 -100 V mA 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation FR– 4 Board (Note 1) Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Limits Unit PD 250 2.0 RθJA 500 mW mW/ºC ºC/W TJ,Tstg −55∼+150 ºC 1.30.0mm×25.0mm×1.6mm(FR4) Leshan Radio Company, LTD. Rev.D Nov. 2022 1/5 LBC856BDW1T1G,S-LBC856BDW1T1G Dual General Purpose Transistors 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = -10 µA) Emitter–Base Breakdown Voltage (IE = -1.0 µA) Symbol V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO Min. Typ. Max. -65 - - -80 - - -80 - - -5 - - - - -15 -4 Unit V V V V Collector Cutoff Current (VCB = -30 V) ICBO (VCB = -30 V, TA = 150°C) nA µA ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) hFE (IC = –2.0 mA, VCE = –5.0 V) - 320 - 220 290 475 - - -0.3 - - -0.65 - -0.7 - - -0.9 - -0.6 - -0.75 - - -0.82 100 - - - - 4.5 - - 10 Collector–Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) VCE(sat) (IC = -100 mA, IB = -5.0 mA) V Base–Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) VBE(sat) (IC = -100 mA, IB = -5.0 mA) V Base–Emitter Voltage (IC = -2.0 mA, VCE = -5.0 V) VBE(on) (IC = -10 mA, VCE = -5.0 V) V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = -10 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Noise Figure(IC = -0.2 mA,VCE = -5.0 V, RS = 2.0 kΩ, f = 1.0 KHz, BW = 200 Hz) Leshan Radio Company, LTD. fT Cobo NF Rev.D Nov. 2022 MHz pF dB 2/5 LBC856BDW1T1G,S-LBC856BDW1T1G Dual General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES IB=10mA IB=7mA 0.18 600 150℃ IB=5mA IB=3mA VCE=5.0V 0.16 500 IC Collector Current(A) 0.14 400 HFE 25℃ 300 200 -55℃ 0.12 IB=1mA 0.10 IB=600µA 0.08 IB=400µA 0.06 IB=200µA 0.04 100 0.02 0 0.0001 0.00 0.001 0.01 0.1 IC Collector Curret(A) 1 0 1 2 3 4 5 VCE Collector to Emittor Voltage(V) HFE vs. IC IC vs. VCE 1.2 2.0 IC=200mA 1.6 IC=20mA IC=50mA IC=150mA IC=100mA IC=30mA 1.2 0.8 1.0 0.8 VBE(on) (V) VCE Collector to Emittor Voltage(V) IC=10mA 0.6 -55℃ 25℃ 0.4 150℃ 0.4 0.2 VCE=5V 0.0 0.02 0.2 2 IB Base Current(mA) 20 0.0 0.0001 0.01 0.1 1 IC Collector Current(A) VCE&IB Leshan Radio Company, LTD. 0.001 VBE(on)&IC Rev.D Nov. 2022 3/5 LBC856BDW1T1G,S-LBC856BDW1T1G Dual General Purpose Transistors 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.2 0.30 IC/IB=10 1.0 0.25 -55℃ 0.20 0.6 VCE(sat) (V) VBE(sat) (V) 0.8 25℃ 0.4 25℃ 0.15 0.10 150℃ 0.2 150℃ 0.05 IC/IB=10 0.0 0.0001 0.001 0.01 0.1 IC Collector Current(A) -55℃ 1 0.00 0.0001 0.001 0.01 0.1 IC Collector Current(A) 1 VCE(sat)&IC VBE(sat)&IC 16 f=1.0MHz Ta=25℃ 14 Cibo Capacitance(pF) 12 10 8 6 Cobo 4 2 0 0.1 1 10 100 VR Reverse Voltage(V) Capacitance Leshan Radio Company, LTD. Rev.D Nov. 2022 4/5 LBC856BDW1T1G,S-LBC856BDW1T1G Dual General Purpose Transistors 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Nov. 2022 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.
LBC856BDW1T1G 价格&库存

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LBC856BDW1T1G
  •  国内价格
  • 20+0.35940
  • 100+0.21440
  • 800+0.15010
  • 3000+0.10720
  • 6000+0.10180
  • 30000+0.09430

库存:43197

LBC856BDW1T1G
  •  国内价格
  • 1+0.44880
  • 200+0.14960
  • 1500+0.09361
  • 3000+0.07425

库存:36893

LBC856BDW1T1G
  •  国内价格
  • 20+0.16796
  • 300+0.13355
  • 1200+0.11439
  • 3000+0.09672

库存:3030

LBC856BDW1T1G
  •  国内价格
  • 20+0.10040
  • 200+0.09371
  • 600+0.08701
  • 3000+0.08032

库存:3000