LBC856BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G CWT1G S-LBC858AWT1G, BWT1G CWT1G PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage V CEO –65 –45 –30 V Collector–Base Voltage V CBO –80 –50 –30 V Emitter–Base Voltage V –5.0 –5.0 –5.0 V –100 –100 –100 mAdc Collector Current — Continuous EBO IC 3 1 2 SOT– 323 / SC-70 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW R θJA T J , T stg 833 –55 to +150 °C/W °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 COLLECTOR 1 BASE 2 EMITTER DEVICE MARKING (S-)LBC856AWT1G= 3A; (S-)LBC856BWT1G= 3B;(S-)LBC857AWT1G= 3E; LBC857BWT1G = 3F; (S-)LBC857CWT1G= 3G; (S-)LBC858AWT1G= 3J; (S-)LBC858BWT1G= 3K; (S-)LBC858CWT1G= 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.0 nA µA — — –100 nA OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) LBC856 Series LBC857B Only LBC858 Series Collector–Base Breakdown Voltage (IC = – 10 µA) LBC856 Series Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series LBC857 Series LBC858 Series LBC857 Series LBC858 Series V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) I CBO Emitter Cutoff Current (VBE = – 5 V) I EBO v v v v 1.FR–5=1.0 x 0.75 x 0.062in Jul. 2019 Rev.A 1/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = –2.0 mA, V CE = –5.0 V) h FE — LBC856A, LBC857A, LBC858A 125 180 250 LBC856B,LBC857B, LBC858B 220 290 475 LBC857C, LBC858C 420 520 800 — — — — – 0.6 — — — – 0.7 – 0.9 — — – 0.3 – 0.65 V –1 – 1.2 V – 0.75 – 0.82 V fT 100 — — MHz Cob — — 4.5 pF NF –– –– 10 dB Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) V CE(sat) V BE(sat) V BE(on) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = – 10 V, f = 1.0 MHz) Noise Figure (I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz) ORDERING INFORMATION ( Pb– Free ) Device Jul. 2019 Package Shipping LBC856AWT1G series SOT-23 3000/Tape & Reel LBC856AWT3G series SOT-23 10000/Tape & Reel Rev.A 2/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G LBC857/LBC858 –1.0 VCE= –10 V T A = 25°C 1.5 T A = 25°C –0.9 V BE(sat) @ I C /I B=10 –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 –0.7 V BE(on) @ V CE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 V CE(sat) @ I C /I B = 10 –0.1 0 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 T A = 25°C –1.6 –1.2 I C= –50 mA IC= –10 mA I C= –200 mA I C= –100 mA I C= –20 mA –0.4 –2.0 –5.0 –10 –20 –50 –100 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 –100 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 400 300 ib T A=25°C 5.0 C ob 3.0 2.0 1.0 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) C Jul. 2019 –10 I B , BASE CURRENT (mA) 7.0 –0.4 –1.0 Figure 3. Collector Saturation Region 10.0 C, CAPACITANCE(pF) –1.0 I C , COLLECTOR CURRENT (mAdc) –2.0 –0.8 –0.5 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE, COLLECTOR– EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.2 200 V CE = –10V T A = 25°C 150 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product Rev.A 3/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G –1.0 V CE = –5.0V 2.0 1.0 0.5 0.2 VBE(sat) @ I C/I B=10 –0.6 VBE @VCE= –5.0 V –0.4 –0.2 VCE(sat) @ I C /I B= 10 0 –0.1–0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –0.2 –50 –100 –200 Figure 8. “On” Voltage –20mA IC = –50mA –100mA –200mA –10mA –0.8 –0.4 TJ= 25°C –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 I B , BASE CURRENT (mA) –1.0 –1.4 –1.8 T J= 25°C 20 C ib θ VB for V BE –55°C to 125°C –2.2 –2.6 –3.0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient fT, CURRENT– GAIN – BANDWIDTH PRODUCT T 40 500 VCE= –5.0V 200 10 100 6.0 C ob 4.0 2.0 –0.1 –0.2 –0.5 Jul. 2019 –10 –20 I C , COLLECTOR CURRENT (mA) –1.6 0 –0.02 –5.0 Figure 7. DC Current Gain –2.0 –1.2 –0.5 –1.0 –2.0 I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region C, CAPACITANCE (pF) T J= 25°C –0.8 V, VOLTAGE (VOLTS) T A = 25°C θVB , TEMPERATURE COEFFICIENT (mV/°C) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) LBC856 –1.0 –2.0 –5.0 –10 –20 –50 –100 50 20 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product Rev.A 4/6 LESHAN RADIO COMPANY, LTD. RESISTANCE (NORMALIZED) r( t), TRANSIENT THERMAL LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G 1.0 0.7 0.5 D=0.5 0.2 0.3 0.2 0.1 0.1 0.05 SINGLE PULSE SINGLE PULSE 0.07 0.05 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P(pk) t1 t2 0.03 0.02 DUTY CYCLE, D = t 1 /t 2 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k t, TIME (ms) Figure 13. Thermal Response –200 1s I C , COLLECTOR CURRENT (mA) –100 TJ= 25°C TA= 25°C –50 3 ms BC558 BC557 –10 BC556 –5.0 BONDING WIRE LIMIT THERMAL LIMIT The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT –2.0 –1.0 –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area Jul. 2019 Rev.A 5/6 10k LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G,CWT1G LBC858AWT1G, BWT1G, CWT1G S-LBC856AWT1G, BWT1G S-LBC857AWT1G, BWT1G,CWT1G S-LBC858AWT1G, BWT1G, CWT1G SC-70 / SOT-323 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 M
1.9 0.075 0.095 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “
”, may or may not be present. 0.9 0.035 Jul. 2019 0.016 0.010 0.087 0.053 0.055 1 XX SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm 
inches Rev.A 6/6