LBCW70LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR LBCW69LT1G LBCW70LT1G 3 1 BASE Featrues We declare that the material of product compliance with RoHS requirements. 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V EBO Value – 45 – 5.0 – 100 Unit Vdc Vdc mAdc SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING LBCW69LT1G = H1; LBCW70LT1G= H2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –20 Vdc, I E = 0 ) (VCE = –20 Vdc, I E = 0 , TA = 100°C) 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CES V (BR)EBO I CEO — — – 100 – 10 nAdc µAdc – 45 – 50 – 5.0 — — — Vdc Vdc Vdc 1/7 LESHAN RADIO COMPANY, LTD. LBCW69LT1G LBCW70LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 120 215 V CE(sat) V BE(on) Min Max Unit — ON CHARACTERISTICS DC Current Gain ( IC= –2.0 mAdc, VCE = –5.0 Vdc ) BCW69LT1 BCW70LT1 Collector–Emitter Saturation Voltage ( IC = – 10 mAdc, IB = –0.5 mAdc ) Base–Emitter On Voltage ( IC = – 2.0 mAdc, V CE = – 5.0Vdc ) 260 500 – 0.3 – 0.75 Vdc Vdc — – 0.6 SMALL–SIGNAL CHARACTERISTICS Output Capacitance ( I E= 0 V CB = –10Vdc, f = 1.0 MHz) Noise Figure (V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) C obo NF — — 7.0 10 pF dB Ordering Information Device LBCW69LT1G LBCW69LT3G LBCW70LT1G LBCW70LT3G Marking H1 H1 H2 H2 Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 2/7 LESHAN RADIO COMPANY, LTD. LBCW69LT1G LBCW70LT1G TYPICAL NOISE CHARACTERISTICS (V CE = – 5.0 Vdc, T A = 25°C) 10 BANDWIDTH = 1.0 Hz R ~0 ~ S 10.0 7.0 5.0 3.0 BANDWIDTH = 1.0 Hz R~ ~ S 7.0 e n , NOISE VOLTAGE (nV) IC=10 µA I n , NOISE CURRENT (pA) 5.0 IC=1.0mA 300µA 2.0 30µA 3.0 100µA 1.0mA 300µA 1.0 0.7 0.5 0.3 0.2 100µA 30µA 10µA 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 0.1 f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = – 5.0 Vdc, T A = 25°C) 1.0M 500k BANDWIDTH = 1.0 Hz 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 R S , SOURCE RESISTANCE ( Ω ) R S , SOURCE RESISTANCE ( Ω ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 500 700 1.0K 0.5 dB 1.0 dB 2.0dB 3.0 dB 5.0 dB 20 30 50 70 100 200 300 500 700 1.0K 0.5 dB 1.0dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 I C , COLLECTOR CURRENT (µA) I C , COLLECTOR CURRENT (µA) Figure 3. Narrow Band, 100 Hz 1.0M Figure 4. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( Ω ) 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 10 Hz to 15.7KHz Noise Figure is Defined as: NF = 20 log 10 ( –––––––––––––––) 4KTR S e n 2 + 4KTRS + I n2 R S2 1/ 2 0.5dB 1.0dB 2.0dB 3.0 dB 5.0 dB 300 500 700 1.0K e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10 –23 j/°K) T = Temperature of the Source Resistance (°K) R s = Source Resistance ( Ω ) I C , COLLECTOR CURRENT (µA) Figure 5. Wideband 8 3/7 LESHAN RADIO COMPANY, LTD. LBCW69LT1G LBCW70LT1G TYPICAL STATIC CHARACTERISTICS V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 1.0 I C , COLLECTOR CURRENT (mA) 100 T J = 25°C 0.8 80 T A = 25°C PULSE WIDTH =300 µs DUTY CYCLE< 2.0% 300µA I B= 400 mA 350µA 250 µA 200 µA 150 µA 0.6 I C= 1.0 mA 10 mA 50 mA 100 mA 60 0.4 40 100 µA 50µA 0.2 20 0 0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) θ V , TEMPERATURE COEFFICIENTS (mV/°C) V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. Collector Saturation Region 1.4 Figure 7. Collector Characteristics 1.6 T J=25°C 1.2 *APPLIES for I C / I B< h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 ∗ θ VC for V CE(sat) 0 25°C to 125°C –55°C to 25°C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V –0.8 25°C to 125°C θ VB for V BE –55°C to 25°C 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 –1.6 V CE(sat) @ I C /I B = 10 –2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 10. “On” Voltages Figure 11. Temperature Coefficients 4/7 LESHAN RADIO COMPANY, LTD. LBCW69LT1G LBCW70LT1G TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 1000 V CC= 3.0 V IC /I B= 10 T J= 25°C t, TIME (ns) 700 500 300 200 100 70 50 30 20 10 ts VCC= –3.0 V IC /I B= 10 IB1=IB2 T J= 25°C t, TIME (ns) 100 70 50 30 20 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 tr td @ V BE(off)= 0.5 V tf –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 I C , COLLECTOR CURRENT (mA) f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Figure 10. Turn–On Time 500 10.0 Figure 11. Turn–Off Time T J = 25°C 300 T J= 25°C V CE=20 V 5.0 V C, CAPACITANCE (pF) 7.0 C ib 5.0 200 3.0 100 2.0 C ob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 12. Current–Gain — Bandwidth Product r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 Figure 13. Capacitance D = 0.5 0.2 0.1 FIGURE 16 0.05 0.02 P(pk) t SINGLE PULSE 1 0.1 0.07 0.05 0.03 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN–569) Z θJA(t) = r(t) • RθJA 0.01 0.02 0.01 0.01 t 2 T J(pk) – T A = P (pk) Z 1.0k 2.0k 5.0k 10k θJA(t) 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 20k 50k 100k t, TIME (ms) Figure 14. Thermal Response 5/7 LESHAN RADIO COMPANY, LTD. LBCW69LT1G LBCW70LT1G 104 I C , COLLECTOR CURRENT (nA) V CC = 3 0 V 103 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z θJA(t) , multiply the value obtained from Figure 14 by the steady state value R θJA . Example: Dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. I CEO 102 101 I CBO 100 AND I CEX @ V BE(off) = 3.0 V 10–1 10–2 –4 –2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (°C) Figure 15. Typical Collector Leakage Current 6/7 LESHAN RADIO COMPANY, LTD. SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 C D H K 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 7/7