LBSS138DW1T1G

LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ● Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS138DW1T1G J1 3000/Tape&Reel LBSS138DW1T3G J1 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Symbol Limits Unit VDSS 50 Vdc VGS ±20 Vdc Drain Current mAdc – Continuous TA = 25°C – Pulsed (tp≤10μs) ID 200 IDM 800 Symbol Limits Unit PD 225 mW 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC 260 ºC 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering TL Purposes, for 10 seconds 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/6 LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 250μAdc) Min. Typ. Max. 50 - - Unit Vdc μAdc Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = 25 Vdc) (VGS = 0, VDS = 50 Vdc) Gate–Body Leakage Current, Forward IGSSF (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 Vdc) - - 0.1 - - 0.5 μAdc - - 0.1 μAdc - - -0.1 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 1.0mAdc) Static Drain–Source On–State Resistance Vdc 0.5 - 1.5 RDS(on) (VGS = 2.75 Vdc, ID < 200 mAdc, Ohms - 5.6 10 - - 3.5 TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance gfs (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) mS 100 - - DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Ciss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) pF - 40 50 - 12 25 pF pF - 3.5 5.0 SWITCHING CHARACTERISTICS ns Turn-On Delay Time Turn-Off Delay Time (VDD = 30 Vdc , ID =200 mAdc) td(on) - - 20 td(off) - - 20 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/6 LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 1 1 VDS=10V VGS=3.5V 0.8 VGS=2.75V VGS=3V VGS=2.5V ID,Drain Current(A) ID,Drain Current(A) 0.8 0.6 VGS=3.25V 0.4 0.2 0.6 150℃ 0.4 25℃ 0.2 -55℃ 0 0 0 1 2 3 4 5 6 VDS,Drain-to-Source Voltage(V) 7 0 3 Transfer Characteristics On-Region Characteristics 2.5 1.4 ID=1mA 1.3 2 VGS=5V,ID=200mA 1.2 VGS(th), Variance(V) RDS(on), Drain-to-source Resistance(Normallized) 1 2 VGS,Gate-to-Source Voltage(V) 1.5 1 VGS=2.75V,ID=200mA 1.1 1 0.9 0.8 0.5 0.7 0 0.6 -55 -5 45 Temperature(℃) 95 145 -55 45 95 Temperature(℃） 145 Threshold Voltage vs.Temperature RDS(on) vs. Temperature Leshan Radio Company, LTD. -5 Rev.B Mar 2016 3/6 LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 3.5 1.0E-05 1.0E-06 RDS(ON),Drain-to-Source Resistance(Ω) IDSS,Drain-to-Source Leakage(A) VGS=2.75V 150℃ 125℃ 1.0E-07 1.0E-08 150℃ 3 2.5 2 25℃ 1.5 -55℃ 1 0.5 0 0 10 20 30 40 VDS,Drain-to-Source Voltage(V) 50 0.1 0.15 0.2 ID,Drain Current(A) RDS(on) vs. ID IDSS vs. VDS 3.5 3.5 VGS=5V 3 VGS=10V RDS(ON),Drain-to-Source Resistance(Ω) RDS(ON),Drain-to-Source Resistance(Ω) 0.25 150℃ 2.5 2 1.5 25℃ 1 -55℃ 0.5 3 150℃ 2.5 2 1.5 25℃ 1 -55℃ 0.5 0 0 0.1 0.2 0.3 0.4 ID,Drain Current(A) 0.5 0.1 0.3 0.4 ID,Drain Current(A) 0.5 RDS(on) vs. ID RDS(on) vs. ID Leshan Radio Company, LTD. 0.2 Rev.B Mar 2016 4/6 LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 50 1 Ciss 40 0.1 C,Capacitor(pF) IS,Diode Current(A) 150℃ 25℃ -55℃ 0.01 30 20 Coss 10 Crss 0.001 0 0 0.5 1 VSD,Forward Voltage(V) 1.5 5 10 15 VDS(V) 20 25 30 Capacitor vs.VDS Body Diode Forward Voltage Leshan Radio Company, LTD. 0 Rev.B Mar 2016 5/6 LBSS138DW1T1G, S-LBSS138DW1T1G Power MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 6/6