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LBSS138LT1G

LBSS138LT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    SOT23 SMT 50V 225mW N–Channel

  • 详情介绍
  • 数据手册
  • 价格&库存
LBSS138LT1G 数据手册
LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138LT1G S-LBSS138LT1G N–Channel SOT–23 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • 1 Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications 2 • Miniature SOT–23 Surface Mount Package saves board space • Pb−Free Package May be Available. The G−Suffix Denotes a SOT– 23 (TO–236AB) Pb−Free Lead Finish • • 200 mAMPS 50 VOLTS R DS(on) = 3.5  We declare that the material of product are Halogen Free and compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. N - Channel 3 MAXIMUM RATINGS (TA = 25 o C unless otherwise noted) Value Unit VDSS 50 Vdc Gate–to–Source Voltage – Continuous VGS ± 20 Vdc Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) ID 200 800 Drain–to–Source Voltage IDM PD 225 mW Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C RθJA 556 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes, for 10 seconds 2 mA Total Power Dissipation @ TA = 25°C Thermal Resistance – Junction–to–Ambient 1 MARKING DIAGRAM & PIN ASSIGNMENT J1 M Symbol Rating J1 = Device Code M = Month Code ORDERING INFORMATION Device Package Shipping LBSS138LT1G S-LBSS138LT1G LBSS138LT3G S-LBSS138LT3G SOT–23 3000 Tape & Reel SOT–23 10000 Tape & Reel Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1G , S-LBSS138LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 50 – – Vdc – – – – 0.1 0.5 OFF CHARACTERISTICS V(BR)DSS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) µAdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) IDSS Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS – – ±0.1 µAdc Gate–Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 – 1.5 Vdc Static Drain–to–Source On–Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) – – 5.6 – 10 3.5 gfs 100 – – mmhos pF ON CHARACTERISTICS (Note 1.) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss – 40 50 Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss – 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss – 3.5 5.0 td(on) – – 20 td(off) – – 20 SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) ns 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. Rev .O 2/5 LESHAN RADIO COMPANY, LTD. LBSS138LT1G , S-LBSS138LT1G TYPICAL ELECTRICAL CHARACTERISTICS 0.7 0.9 VGS = 3.5 V TJ = 25°C VGS = 3.25 V 0.6 VGS = 3.0 V 0.5 VGS = 2.75 V 0.4 VGS = 2.5 V 0.3 0.2 0.1 0 VDS = 10 V 0.8 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 0.8 -55°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 9 0 10 0 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics Figure 1. On–Region Characteristics 2.2 1.25 ID = 1.0 mA 2 1.8 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.6 VGS = 4.5 V ID = 0.5 A 1.4 1.2 1 1.125 1 0.875 0.8 0.6 -55 -5 45 95 0.75 -55 145 -30 -5 20 45 70 95 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. On–Resistance Variation with Temperature Figure 4. Threshold Voltage Variation with Temperature VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 25°C 10 VDS = 40 V TJ = 25°C 8 6 4 ID = 200 mA 2 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge Rev .O 3/5 145 LESHAN RADIO COMPANY, LTD. LBSS138LT1G , S-LBSS138LT1G 10 VGS = 2.5 V 9 8 150°C 7 6 5 25°C 4 -55°C 3 2 1 0.05 0 0.15 0.1 0.25 0.2 ID, DRAIN CURRENT (AMPS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 8 5 4 2 1 4 3.5 3 25°C 2.5 2 -55°C 1.5 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 4.5 0 -55°C 0.05 0 0.25 0.2 4.5 VGS = 10 V 4 150°C 3.5 3 2.5 25°C 2 -55°C 1.5 1 0 0.05 0.1 ID, DRAIN CURRENT (AMPS) 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 9. On–Resistance versus Drain Current Figure 8. On–Resistance versus Drain Current 1 I D , DIODE CURRENT (AMPS) 0.15 0.1 Figure 7. On–Resistance versus Drain Current 150°C 5 1 25°C 3 ID, DRAIN CURRENT (AMPS) VGS = 4.5 V 5.5 150°C 6 Figure 6. On–Resistance versus Drain Current 6 VGS = 2.75 V 7 120 100 TJ = 150°C 0.1 25°C -55°C 80 60 0.01 Ciss 40 Coss 20 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 Crss 0 5 10 15 20 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 10. Body Diode Forward Voltage Figure 11. Capacitance Rev .O 4/5 25 LESHAN RADIO COMPANY, LTD. LBSS138LT1G , S-LBSS138LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 5/5 LESHAN RADIO COMPANY, LTD. EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002’’) (.06’’) A 50mm Min 20.2mm Min (.795’’) (1.969’’) Full Radius G Inside Dimension Measured Near Hub Size A Max 8 mm 178.0mm (7.0’’) G 8.4mm+1.5mm, -0.0 (.33’’+.039’’, -0.00) T Max 10.9mm (.43’’) Reel Dimensions Metric Dimensions Govern –– English are in parentheses for reference only Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) LESHAN RADIO COMPANY, LTD. Shipment Specification CPN LABEL LABEL LABEL Dim(Unit:mm) 195mm*195mm*150mm 10 Reel 10Reel/Inner Box 30KPCS/Inner Box 3000PCS/Reel 80KPCS/Inner Box (SOT-723,SOD-723,SOD-923) 8000PCS/Reel (SOT-723,SOD-723,SOD-923) Dim(Unit:mm) LABEL 460mm*400mm*420mm MARK 乐山无线电股份有限公司 Leshan Radio Company,Ltd. 12 Inner Box/Carton 360KPCS/Carton 960KPCS/Carton (SOT-723,SOD-723,SOD-923)
LBSS138LT1G
物料型号》章节详细列出了LBSS138LT1G这款MOSFET的基本型号信息。

器件简介》部分提供了该MOSFET的概述,包括其主要应用场景和优势。

引脚分配》章节说明了LBSS138LT1G的引脚布局和功能。

参数特性》部分列出了该器件的电气参数,如最大漏极电流、最大漏源电压等。

功能详解》章节深入探讨了LBSS138LT1G的功能,包括其工作原理和主要特点。

应用信息》部分提供了该器件的典型应用案例和建议的应用场景。

最后,《封装信息》章节描述了LBSS138LT1G的封装类型和尺寸,这对于PCB设计和组件安装至关重要。
LBSS138LT1G 价格&库存

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LBSS138LT1G
  •  国内价格
  • 20+0.16580
  • 100+0.14320
  • 300+0.12060
  • 800+0.09040
  • 3000+0.07540

库存:274901

LBSS138LT1G
  •  国内价格
  • 1+0.41360
  • 200+0.13750
  • 1500+0.08613
  • 3000+0.05940

库存:70703

LBSS138LT1G
    •  国内价格
    • 50+0.10682
    • 500+0.08414
    • 3000+0.07161

    库存:135888

    LBSS138LT1G
      •  国内价格
      • 20+0.08000
      • 200+0.07466
      • 600+0.06933
      • 3000+0.06400

      库存:7525