LBSS138WT1G

LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. ● Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS138WT1G J1 3000/Tape&Reel LBSS138WT3G J1 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Symbol Limits Unit VDSS 50 Vdc VGS ±20 Vdc Drain Current mAdc – Continuous TA = 25°C – Pulsed (tp≤10μs) ID 200 IDM 800 Symbol Limits Unit PD 150 mW 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC 260 ºC 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering TL Purposes, for 10 seconds 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/6 LBSS138WT1G, S-LBSS138WT1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 250μAdc) Min. Typ. Max. 50 - - Unit Vdc μAdc Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = 25 Vdc) (VGS = 0, VDS = 50 Vdc) Gate–Body Leakage Current, Forward IGSSF (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 Vdc) - - 0.1 - - 0.5 μAdc - - 0.1 μAdc - - -0.1 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 1.0mAdc) Static Drain–Source On–State Resistance Vdc 0.5 - 1.5 RDS(on) (VGS = 2.75 Vdc, ID < 200 mAdc, Ohms - 5.6 10 - - 3.5 TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance gfs (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) mS 100 - - DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Ciss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) pF - 40 50 - 12 25 pF pF - 3.5 5.0 SWITCHING CHARACTERISTICS ns Turn-On Delay Time Turn-Off Delay Time (VDD = 30 Vdc , ID =200 mAdc) td(on) - - 20 td(off) - - 20 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/6 LBSS138WT1G, S-LBSS138WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 1 1 VDS=10V ID,Drain Current(A) 0.8 VGS=2.75V VGS=3V VGS=2.5V ID,Drain Current(A) VGS=3.5V 0.8 0.6 VGS=3.25V 0.4 0.2 0.6 150℃ 0.4 25℃ 0.2 -55℃ 0 0 0 1 2 3 4 5 6 VDS,Drain-to-Source Voltage(V) 7 0 1 2 VGS,Gate-to-Source Voltage(V) 3 Transfer Characteristics On-Region Characteristics 2.5 1.4 1.3 2 VGS=5V,ID=200mA 1.2 VGS(th), Variance(V) (Normallized) RDS(ON),Drain-to-Source Resistance ID=1mA 1.5 1 VGS=2.75V,ID=200mA 1.1 1 0.9 0.8 0.5 0.7 0 0.6 -55 -5 45 Temperature(℃) 95 145 -5 45 95 Temperature(℃） 145 Threshold Voltage vs.Temperature RDS(on) vs. Temperature Leshan Radio Company, LTD. -55 Rev.B Mar 2016 3/6 LBSS138WT1G, S-LBSS138WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 3.5 1.0E-05 1.0E-06 RDS(ON),Drain-to-Source Resistance(Ω) IDSS,Drain-to-Source Leakage(A) VGS=2.75V 150℃ 125℃ 1.0E-07 1.0E-08 150℃ 3 2.5 2 25℃ 1.5 -55℃ 1 0.5 0 0 10 20 30 40 VDS,Drain-to-Source Voltage(V) 50 0.1 0.15 0.2 ID,Drain Current(A) RDS(on) vs. ID IDSS vs. VDS 3.5 3.5 VGS=5V 3 VGS=10V RDS(ON),Drain-to-Source Resistance(Ω) RDS(ON),Drain-to-Source Resistance(Ω) 0.25 150℃ 2.5 2 1.5 25℃ 1 -55℃ 0.5 3 150℃ 2.5 2 1.5 25℃ 1 -55℃ 0.5 0 0 0.1 0.2 0.3 0.4 ID,Drain Current(A) 0.5 0.1 0.3 0.4 ID,Drain Current(A) 0.5 RDS(on) vs. ID RDS(on) vs. ID Leshan Radio Company, LTD. 0.2 Rev.B Mar 2016 4/6 LBSS138WT1G, S-LBSS138WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 50 1 Ciss 40 0.1 C,Capacitor(pF) IS,Diode Current(A) 150℃ 25℃ -55℃ 0.01 30 20 Coss 10 Crss 0.001 0 0 0.5 1 VSD,Forward Voltage(V) 1.5 5 10 15 VDS(V) 20 25 30 Capacitor vs.VDS Body Diode Forward Voltage Leshan Radio Company, LTD. 0 Rev.B Mar 2016 5/6 LBSS138WT1G, S-LBSS138WT1G Power MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.80 A1 0.00 A2 NOM MAX 0.90 1.00 0.032 0.035 0.039 0.05 0.10 0.000 0.002 0.004 0.70REF MIN NOM MAX 0.028REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e1 L HE 0.65REF 0.026REF 0.20 0.38 0.56 0.008 0.015 0.022 2.00 2.10 2.40 0.079 0.083 0.095 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 6/6