LBSS139DW1T1G

LBSS139DW1T1G S-LBSS139DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ● Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications. ● ESD Protected:1500V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS139DW1T1G J2 3000/Tape&Reel LBSS139DW1T3G J2 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Symbol Limits Unit VDSS 50 Vdc VGS ±20 Vdc ID 200 IDM 800 Symbol Limits Unit PD 380 mW Drain Current mAdc – Continuous TA = 25°C – Pulsed (tp≤10μs) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC 3.05 mW/ºC RΘJA 328 ºC/W TJ,Tstg −55∼+150 ºC 260 ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering TL Purposes, for 10 seconds 1. FR–4 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Jan 2016 1/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 250μAdc) Min. Typ. Max. 50 - - Unit Vdc μAdc Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = 25 Vdc) (VGS = 0, VDS = 50 Vdc) Gate–Body Leakage Current, Forward IGSSF (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 Vdc) - - 0.1 - - 0.5 μAdc - - 10 μAdc - - -10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 1.0mAdc) Static Drain–Source On–State Resistance Vdc 0.5 - 1.5 RDS(on) (VGS = 2.75 Vdc, ID < 200 mAdc, Ohms - 5.6 10 - - 3.5 TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance gfs (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) mS 100 - - DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) pF - 22.8 - - 3.5 - pF pF - 2.9 - SWITCHING CHARACTERISTICS ns Turn-On Delay Time Turn-Off Delay Time (VDD = 30 Vdc , VGEN = 10 V,RG =25Ω ,RL =60 Ω,ID =500 mAdc) td(on) - 3.8 - td(off) - 19 - 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Jan 2016 2/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES Power Dissipation 1.0 Drain Current 0.6 0.5 ID - Drain Current (A) Ptot - Power (W) 0.8 0.6 0.4 0.2 0.4 0.3 0.2 0.1 o TA=25 C,VG=10V o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area 60 80 100 120 140 160 Thermal Transient Impedance 300us 1ms 10ms 0.1 100ms 1s DC 0.01 o TC= 25 C 0.1 1 10 Normalized Effective Transient Rd s( on )L im it 100us ID - Drain Current (A) 40 2 1 100 300 VDS - Drain-Source Voltage (V) Leshan Radio Company, LTD. 20 Tj - Junction Temperature (°C) 5 1E-3 0 Rev.B Jan 2016 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1E-4 1E-3 0.01 2 Mounted on 1in pad o RθJA : 150 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 3/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Output Characteristics Drain-Source On Resistance 1.0 2.6 ID - Drain Current (A) 0.8 VGS= 4,5,6,8,10 V 3.0 V 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 RDS(ON) - On Resistance (Ω) 2.4 2.2 2.0 1.8 VGS= 4.5V 1.6 VGS= 10 V 1.4 1.2 1.0 0.8 0.6 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 2.4 1.6 IDS = 250 μA ID= 0.5 A Normalized Threshold Voltage RDS(ON) - On Resistance (Ω) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) Leshan Radio Company, LTD. Rev.B Jan 2016 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 4/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Drain-Source On Resistance Source-Drain Diode Forward 2 1.6 VGS= 10 V 1.4 1 IS - Source Current (A) Normalized On Resistance ID = 0.5 A 1.2 1.0 0.8 o Tj =25 C o RON@Tj= 25 C: 1.2 Ω 75 100 125 150 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) -50 -25 0 25 50 Gate Charge Capacitance 40 4.5 Frequency = 1 MHz 35 VGS - Gate-Source Voltage (V) Ciss 25 20 15 Coss 10 5 Crss 0 0 5 10 15 20 25 30 VDS - Drain-Source Voltage (V) Leshan Radio Company, LTD. VDS= 10 V 4.0 30 C - Capacitance (pF) o Tj= 150 C Rev.B Jan 2016 IDS= 0.5 A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 QG - Gate Charge (pC) 5/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 6.ELRCTRICAL CHARACTERISTICS CURVES(Con.) Drain-Source On Resistance Drain-Source On Resistance 1.6 3.0 ID = 0.5 A VGS= 4.5 V 1.2 VGS= 10 V 1.0 0.8 0.6 o RON@Tj= 25 C: 1.2 Ω 0.4 -50 -25 0 25 50 RDS(ON) – On Resistance(Ω) 1.4 Normalized On Resistance VGS= 4.5V O TJ= 125 C 2.8 2.6 O TJ= 85 C 2.4 2.2 2.0 O TJ= 25 C 1.8 1.6 1.4 O TJ= -55 C 1.2 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 75 100 125 150 Tj - Junction Temperature (°C) ID - Drain Current (A) Drain-Source On Resistance 3.0 1.2 VGS= 10V 2.6 1.0 2.4 2.2 2.0 1.8 1.6 1.4 ID - Drain Current (A) RDS(ON) – On Resistance(Ω) 2.8 O TJ= 125 C O TJ= 85 C O TJ= 25 C 1.2 1.0 O TJ= -55 C 0.8 0.8 0.6 o Tj=125 C 0.4 o Tj=25 C 0.2 o Tj=-55 C 0.6 0.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID - Drain Current (A) Leshan Radio Company, LTD. 0.0 0 1 2 3 4 5 6 VGS – Gate Voltage (V) Rev.B Jan 2016 6/7 LBSS139DW1T1G, S-LBSS139DW1T1G Power MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Jan 2016 7/7