LBSS139WT1G

LBSS139WT1G S-LBSS139WT1G Power MOSFET 200 mAmps, 50V N–Channel SC-70 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. ● Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications. ESD Protected:1500V ● MSL:Level 1 ● 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS139WT1G J2 3000/Tape&Reel LBSS139WT3G J2 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous TA = 25°C – Pulsed (tp≤10μs) Symbol Limits Unit VDSS 50 VGS ±20 V V ID 200 IDM 800 Symbol Limits Unit PD 150 mW mA 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, 1.2 mW/ºC RΘJA 833 ºC/W TJ,Tstg −55∼+150 ºC 260 ºC Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering TL Purposes, for 10 seconds 1. FR–4 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.C Jan 2019 1/5 LBSS139WT1G, S-LBSS139WT1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 250μA) Min. Typ. Max. 50 - - Unit V μA Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = 25 V) (VGS = 0, VDS = 50 V) Gate–Body Leakage Current, Forward IGSSF (VGS = 20 V) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 V) - - 0.1 - - 0.5 μA - - 10 μA - - -10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 1.0mA) Static Drain–Source On–State Resistance V 0.5 - 1.5 RDS(on) (VGS = 2.75 V, ID < 200 mA, Ohms - 5.6 10 - - 3.5 TA = –40°C to +85°C) (VGS = 5.0 V, ID = 200 mA) Forward Transconductance gfs (VDS = 25 V, ID = 200 mA, f = 1.0 MHz) mS 100 - - DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance Coss (VDS = 25 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss (VDS = 25 V, VGS = 0, f = 1.0 MHz) pF - 22.8 - - 3.5 - pF pF - 2.9 - SWITCHING CHARACTERISTICS ns Turn-On Delay Time Turn-Off Delay Time (VDD = 30 V , VGEN = 10 V,RG =25Ω ,RL =60 Ω,ID =500 mA) td(on) - 3.8 - td(off) - 19 - 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.C Jan 2019 2/5 LBSS139WT1G, S-LBSS139WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 0.2 0.4 VGS=2.5V,3V,3.5V,4V VDS=10V 0.3 ID(A) ID(A) VGS=2.0V VGS=1.9V 0.1 25℃ 0.2 VGS=1.8V VGS=1.7V 0.1 150℃ -55℃ VGS=1.6V 0 0 0 1 2 3 VDS(V) 4 0.0 5 0.5 1.0 1.5 VGS(V) 2.0 2.5 3.0 ID vs. VGS ID vs. VDS 2.0 1 1.9 1.8 VGS=2.75V 1.7 IS(A) RDS(on) (Ω) 0.1 150℃ 25℃ -55℃ 0.01 1.6 1.5 1.4 1.3 VGS=5V 1.2 1.1 1.0 0.001 0.2 0.4 0.6 VSD(V) 0.8 1.0 0.05 0.15 0.20 0.25 ID(A) 0.30 0.35 0.40 RDS(on) vs. ID IS vs. VSD Leshan Radio Company, LTD. 0.10 Rev.C Jan 2019 3/5 LBSS139WT1G, S-LBSS139WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 2.5 30 ID=200mA 25 25℃ 2.0 150℃ RDS(on) (Ω) RDS(on) (Ω) 20 -55℃ 15 1.5 VGS=5.0V,ID=200mA 1.0 10 0.5 5 0.0 0 1 2 3 VGS(V) 4 -50 5 -25 0 25 50 75 Tj(℃) 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 1.4 45 ID=1.0mA f=1.0MHz Ta=25℃ 40 1.3 35 Capacitance(pF) VGSTH(V) Ciss 1.2 1.1 30 25 20 15 1.0 10 0.9 Coss 5 Crss 0 0.8 -50 -25 0 25 50 Tj(℃) 75 100 125 150 0 VGSTH vs. Tj Leshan Radio Company, LTD. 10 20 30 VDS(V) 40 50 Capacitance Rev.C Jan 2019 4/5 LBSS139WT1G, S-LBSS139WT1G Power MOSFET 7.OUTLINE AND DIMENSIONS SC70 NOR MIN MAX 0.80 0.00 0.95 0.05 0.7 REF 1.00 0.10 b c 0.30 0.10 0.35 0.15 0.40 0.25 D E 1.80 1.15 2.05 1.30 2.20 1.35 e 1.20 1.30 1.40 DIM A A1 A2 e1 L 0.20 He 2.00 0.65 BSC 0.35 0.56 2.10 2.40 ALL Dimension in mm 8.SOLDERING FOOTPRINT SC70 DIM MIN A B Leshan Radio Company, LTD. Rev.C Jan 2019 1.90 C 0.65 0.65 X Y 0.70 0.90 5/5