LBSS4240LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors 40V,2A Low VCE(sat) NPN Silicon FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation LBSS4240LT1G S-LBSS4240LT1G • Replacement for SOT89/SOT223 standard packaged transistors. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT– 23 APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications COLLECTOR 3 • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). 1 BASE DESCRIPTION 2 EMITTER NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: LBSS5240LT1G . ORDERING INFORMATION Device Marking Shipping LBSS4240LT1G S-LBSS4240LT1G ZE 3000/Tape & Reel LBSS4240LT3G S-LBSS4240LT3G ZE 10000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 V Collector–Base Voltage V CBO 40 V Emitter–Base Voltage V EBO 5.0 V Collector Current — Continuous IC 2 A total power dissipation PD 0.3 W Junction temperature Tj 150 °C Storage temperature T stg -65 ~+150 °C THERMAL CHARACTERISTICS Symbol Rth(j-a) Parameter thermal resistance from junction to ambient Conditions Value Unit in free air;note 1 417 K/W in free air;note 2 260 K/W Notes: 1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint. 2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm.2 Rev.O 1/5 LESHAN RADIO COMPANY, LTD. LBSS4240LT1G,S-LBSS4240LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0; VCB = 30 V − 100 nA IEBO emitter-base cut-off current IC = 0; VEB = 4 V − 100 nA hFE DC current gain IC = 100 mA; VCE = 2 V 350 − IC = 500 mA; VCE = 2 V 300 − IC = 1 A; VCE = 2 V 300 − VCEsat collector-emitter saturation voltage IC = 2 A; VCE = 2 V 150 − IC = 100 mA; IB = 1 mA − 70 mV IC = 500 mA; IB = 50 mA − 100 mV IC = 750 mA; IB = 15 mA − 180 mV IC = 1 A; IB = 50 mA; note 1 − 180 mV IC = 2 A; IB = 200 mA; note 1 − 320 mV VBEsat base-emitter saturation voltage IC = 2 A; IB = 200 mA; note 1 − 1.1 V VBEon base-emitter turn on voltage IC = 100 mA; VCE = 2 V − 0.75 V Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 20 pF fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 100 − MHz Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Rev.O 2/5 LESHAN RADIO COMPANY, LTD. LBSS4240LT1G,S-LBSS4240LT1G ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) VCE=2V VCE=2V 1.2 BASE TURN-ON VOLTAGE : VBE(on) (V) DC CURRENT GAIN : hFE 10000 1000 100 10 0.0001 0.001 0.01 0.1 1 1 0.8 0.6 0.4 0.2 0 0.0001 10 COLLECTOR CURRENT : IC (A) Ta=25C Ta=-55C Fig.2 BASE-EMITTER TURN-ON VOLTAGE IC/IB=20 100 10 0.0001 0.001 0.01 0.1 1 Ta=-55C 1 0.1 0.0001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Ta=25C 10 VOLTAGE : VBE(sat) (V) 10 BASE-EMITTER SATURATION VOLTAGE : VCE(sat) (mV) VS.COLLECTOR CURRENT IC/IB=20 1000 10 Ta=150C Ta=-55C Ta=25C Ta=150C Fig.1 DC CURRENT GAIN VS.COLLECTOR CURRENT COLLECTOR SATURATION 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Ta=150C Fig.3 COLLECTOR-EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT Ta=25C Ta=-55C Ta=150C Fig.4 BASE-EMITTER SATURATION VOLTAGE VS.COLLECTOR CURRENT Rev.O 3/5 LESHAN RADIO COMPANY, LTD. LBSS4240LT1G,S-LBSS4240LT1G ELECTRICAL CHARACTERISTIC CURVES (Ta = 25°C) 2 1 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE : VCE (V) 5 IB=4mA IB=6mA IB=8mA IB=10mA IB=12mA IB=14mA IB=16mA IB=18mA IB=20mA IB=2mA IC/IB=20 1000 RESISTANCE:Rce (Ω) COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT : IC (A) 3 100 10 1 0.1 0.0001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Ta=25C Ta=-55C 10 Ta=150C Fig.6 COLLECTOR-EMITTER SATURATION RESISTANCE VS.COLLECTOR CURRENT Fig.5 COLLECTOR CURRENT VS.COLLECTOREMITTER SATURATION VOLTAGE Rev.O 3/5 LESHAN RADIO COMPANY, LTD. LBSS4240LT1G,S-LBSS4240LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 5/5