LBSS4350SY3T1G

LBSS4350SY3T1G S-LBSS4350SY3T1G NPN TRANSISTOR 1 2 1. FEATURES 3 ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● We declare that the material of product compliance with SOT89 RoHS requirements and Halogen Free. ● 2 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 1 qualified and PPAP capable. 3 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS4350SY3T1G A3 1000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 50 V Collector–Base Voltage VCBO 60 V Emitter–Base Voltage VEBO 6 V IC ICP 3 6 A A Symbol PD Limits 550 Unit mW mW/ºC RΘJA 4.4 225 TJ,Tstg −55∼+150 ºC Collector Current Collector Current(Pulse) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature ºC/W 1.PCB Size:30.0mm×25.0mm×1.6mm,FR-4 Board; Leshan Radio Company, LTD. Rev.E Sep. 2021 1/5 LBSS4350SY3T1G,S-LBSS4350SY3T1G NPN TRANSISTOR 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. Unit ICBO - - 1 µA IEBO - - 1 µA HFE 200 - 500 35 - - VCE(sat) - 0.19 0.5 V VBE(sat) - 0.94 1.2 V fT - 148 - MHz Cob - 15 - pF (VCC=15V,VBE=-2V, IC=1A,IB1=0.1A) td - 10 - tr - 9 - (VCC=15V,IC=1A, IB1=IB2=0.1A) ts - 439 - tf - 73 - Collector Cutoff Current (VCB =40V, IE =0 ) Emitter Cut-off Current (VEB =4V, IC =0) DC Current Gain (VCE =2V, IC =100mA) (VCE =2V, IC =3A) Collector–Emitter Saturation Voltage (IC =2A, IB =100mA) Base–Emitter Saturation Voltage (IC =2A, IB =100mA) Transition Frequency (VCE =10V, IC =50mA, f=100MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz, IE=0) Delay Time Rise Time Storage Time Fall Time Leshan Radio Company, LTD. Rev.E Sep. 2021 ns 2/5 LBSS4350SY3T1G,S-LBSS4350SY3T1G NPN TRANSISTOR 6.ELECTRICAL CHARACTERISTICS CURVES 3.0 700 VCE=2.0V IB=10mA 600 2.5 125℃ IB=8mA 500 400 IC(A) HFE 2.0 25℃ IB=6mA 1.5 IB=4mA 300 200 IB=3mA 1.0 -55℃ IB=2mA 0.5 100 IB=1mA 0 0.001 0.0 0.01 0.1 IC(A) 1 0 10 1 2 3 VCE(V) 4 5 IC vs. VCE HFE vs. IC 1.0 5 IC=500mA IC=400mA IC=10mA IC=100mA -55℃ 0.8 IC=300mA IC=200mA 3 2 VBE(on) (V) VCE(V) 4 0.6 25℃ 0.4 125℃ VCE=2.0V 1 0 0.002 0.02 0.2 2 20 0.2 0.001 0.1 1 10 IC(A) IB(mA) VCE vs. IB Leshan Radio Company, LTD. 0.01 VBE(on) vs. IC Rev.E Sep. 2021 3/5 LBSS4350SY3T1G,S-LBSS4350SY3T1G NPN TRANSISTOR 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.25 1.2 IC/IB=20 0.20 1.0 125℃ 25℃ VCE(sat) (V) VBE(sat) (V) -55℃ 0.8 25℃ 0.6 0.15 -55℃ 0.10 125℃ 0.05 0.4 IC/IB=20 0.2 0.001 0.01 0.1 IC(A) 1 0.00 0.001 10 0.01 1 10 VCE(sat) vs. IC VBE(sat) vs. IC 350 1.0 f=1.0MHz Ta=25℃ 300 0.8 Pd, Power Dissipation (W) Cibo Capacitance(pF) 0.1 IC(A) 250 200 150 100 0.6 0.4 0.2 Cobo 50 PCB Size: 30.0mm×25.0mm×1.6mm(FR4) 0 0.0 0.1 1 10 100 VR(V) 25 50 75 100 125 Ta, Ambient Temperature (℃) 150 Power Derating Curve Capacitance Leshan Radio Company, LTD. 0 Rev.E Sep. 2021 4/5 LBSS4350SY3T1G,S-LBSS4350SY3T1G NPN TRANSISTOR 7.OUTLINE AND DIMENSIONS 8 .SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.E Sep. 2021 5/5 DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only. ● Before you use our Products for new Project, you are requested to carefully read this document and fully under-stand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe-ntative.