LBSS5350SY3T1G

LBSS5350SY3T1G S-LBSS5350SY3T1G PNP TRANSISTOR 1 2 1. FEATURES 3 ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● We declare that the material of product compliance with SOT89 RoHS requirements and Halogen Free. ● 2 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 1 qualified and PPAP capable. 3 2. DEVICE MARKING AND ORDERING INFORMATION Device LBSS5350SY3T1G Marking D3 Shipping 1000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -50 V Collector–Base Voltage VCBO -60 V Emitter–Base Voltage VEBO -6 V IC -3 A ICP -6 A Symbol PD Limits 550 Unit mW mW/ºC RΘJA 4.4 225 TJ,Tstg −55∼+150 ºC Collector Current Collector Current(Pulse) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient Junction and Storage temperature ºC/W 1.PCB Size:30.0mm×25.0mm×1.6mm,FR-4 Board; Leshan Radio Company, LTD. Rev.C Sep. 2019 1/5 LBSS5350SY3T1G,S-LBSS5350SY3T1G PNP TRANSISTOR 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Collector Cutoff Current (VCB = -40 V,IE = 0) Emitter Cut-off Current (VEB =-4V, IC =0) Symbol ICBO IEBO Min. Typ. Max. Unit - - -1 µA - - -1 µA 200 - 400 35 - - DC Current Gain (VCE =-2V, IC =-100mA) HFE (VCE =-2V, IC =-3A) Collector–Emitter Saturation Voltage (IC =-2A, IB =-100mA) Base-Emitter saturation voltage (IC =-2A, IB =-100mA) Transition Frequency (VCE =-10V, IC =-50mA) Collector Output Capacitance (VCB =-10V, f=1MHz) Leshan Radio Company, LTD. VCE(sat) VBE(sat) fT Cob Rev.C Sep. 2019 V - -0.35 -0.7 V - -0.94 -1.2 MHz - 150 pF - 39 - 2/5 LBSS5350SY3T1G,S-LBSS5350SY3T1G PNP TRANSISTOR 6.ELECTRICAL CHARACTERISTICS CURVES 700 2.5 VCE=2.0V IB=10mA IB=9.0mA 600 150℃ 2.0 IB=7.0mA IC Collector Current(A) HFE DC GAIN 500 400 300 25℃ 200 1.5 IB=5.0mA IB=2.5mA 1.0 IB=3.0mA 0.5 -55℃ 100 IB=2.0mA 0 0.001 IB=1.0mA IB=1.5mA 0.0 0.01 0.1 1 IC，Collector Current(A) 10 0 1 2 3 4 VCE Collector to Emittor Voltage(V) HFE vs. IC 5 IC vs. VCE 1.2 1.0 0.8 1.0 IC=0.9A IC=0.5A IC=0.7A 0.6 0.4 VBE(on) (V) VCE Collector to Emittor Voltage(V) IC=1.0A IC=0.3A IC=0.1A -55℃ 0.8 0.6 25℃ 0.4 IC=0.01A 150℃ 0.2 0.2 VCE=2.0V 0.0 0.02 0.2 2 20 0.0 0.001 IB Base Current(mA) 10 VBE(on) vs. IC VCE vs. IB Leshan Radio Company, LTD. 0.01 0.1 1 IC Collector Current(A) Rev.C Sep. 2019 3/5 LBSS5350SY3T1G,S-LBSS5350SY3T1G PNP TRANSISTOR 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 0.5 1.2 IC/IB=20 1.0 0.4 -55℃ VCE(sat) (V) VBE(sat) (V) 0.8 25℃ 0.6 0.4 0.3 150℃ 0.2 25℃ 150℃ 0.1 0.2 -55℃ IC/IB=20 0.0 0.001 0.01 0.1 1 IC Collector Current(A) 10 0.0 0.001 VBE(sat) vs. IC 0.01 0.1 1 IC Collector Current(A) 10 VCE(sat) vs. IC 350 f=1.0MHz Ta=25℃ 300 Cibo Capacitance(PF) 250 200 150 100 Cobo 50 0 0.1 1 10 VR Reverse Voltage(V) 100 Capacitance Leshan Radio Company, LTD. Rev.C Sep. 2019 4/5 LBSS5350SY3T1G,S-LBSS5350SY3T1G PNP TRANSISTOR 7.OUTLINE AND DIMENSIONS 8 .SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.C Sep. 2019 5/5