LBSS8402DW1T1G

LBSS8402DW1T1G S-LBSS8402DW1T1G POWER MOSFET 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 2 1 LBSS8402DW1T1G 402 3000/Tape&Reel D2 G1 S1 LBSS8402DW1T3G 402 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS 50 V Gate–to–Source Voltage – Continuous VGS ±20 V S2 G2 D1 mA 4 5 6 Drain Current – Continuous (Ta = 25°C) ID 130 – Pulsed Drain Current (tp ≤ 10 µs) IDM 520 Total Power Dissipation @ TA = 25°C PD 380 mW RΘJA 328 ℃/W TJ,Tstg −55∼+150 ℃ TL 260 ℃ Thermal Resistance, Junction–to–Ambient Junction and Storage temperature range Maximum Lead Temperature for Soldering Purposes, for 10 seconds Leshan Radio Company, LTD. Rev.D Apr. 2019 1/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) N-Channel OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 250μA) Min. Typ. Max. 50 - - Unit V μA Zero Gate Voltage Drain Current IDSS (VDS = 25 V, VGS = 0 V) (VDS = 50 V, VGS = 0 V) Gate–Source Leakage Current IGSS (VGS = ± 20 V, VDS = 0 V) - - 0.1 - - 0.5 μA - - ±0.1 ON CHARACTERISTICS (Note 1) Gate–Source Threshold Voltage VGS(th) (VDS = VGS , ID = 1.0 mA) V 0.5 - 1.5 Static Drain–Source On–State Resistance Ohm (VGS= 2.75 V, ID < 200 mA, TA = –40°C to +85°C) RDS(on) - 5.6 10 (VGS = 5.0 V, ID = 200 mA) - - 3.5 DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = 25 V, VGS = 0, f = 1 MHz) Output Capacitance Coss (VDS = 25 V, VGS = 0, f = 1 MHz) Transfer Capacitance Crss (VDS = 25 V, VGS = 0, f = 1 MHz) pF - 42 pF - 15 pF - 3 - - 5 7 - SWITCHING CHARACTERISTICS(Note 2) Turn-On Delay Time Turn-Off Delay Time Leshan Radio Company, LTD. (VDD = 30 V, ID =0.2A) td(on) td(off) Rev.D Apr. 2019 ns 2/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 4 ELECTRICAL CHARACTERISTICS (Ta= 25ºC)(Con.) P-Channel OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = -250μA) Min. Typ. Max. -50 - - Unit V μA Zero Gate Voltage Drain Current (VDS = -25 V, VGS = 0 V) IDSS (VDS = -50 V, VGS = 0 V) (VDS = -50 V, VGS = 0 V, TJ = 125°C) Gate–Source Leakage Current IGSS (VGS = ± 20 V, VDS = 0 V) - - -0.1 - - -15 - - -60 μA - - ±0.1 ON CHARACTERISTICS (Note 1) Gate–Source Threshold Voltage VGS(th) (VDS = VGS , ID = -250 µA) Static Drain–Source On–State Resistance RDS(on) (VGS = -5.0 V, ID = -100 mA) V -0.8 - -2.0 Ohm - 5 10 DYNAMIC CHARACTERISTICS Input Capacitance Ciss (VDS = -5 V) Output Capacitance Coss (VDS = -5 V) Transfer Capacitance Crss (VDS = -5 V) pF - 30 pF - 10 pF - 5 - td(on) - 16.7 - tr - 8.6 - td(off) tf - 17.9 5.3 - QT - 6000 - SWITCHING CHARACTERISTICS(Note 2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time (VDS = –15 V,VGS=-10V ,RL = 50Ω,RG=25Ω) Gate Charge ns pC 1.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. 2. Switching characteristics are independent of operating junction temperature. Leshan Radio Company, LTD. Rev.D Apr. 2019 3/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES N-Channel 0.6 0.8 Ta=25℃ VDS=10V VGS=2.5V,3V,3.5V 0.7 0.5 25℃ ID,Drain Current(A) ID,Drain Current(A) 0.6 VGS=2V 0.5 0.4 VGS=1.8V 0.3 0.4 150℃ -55℃ 0.3 0.2 0.2 VGS=1.6V 0.1 0.1 VGS=1.4V 0 0 2 4 6 VDS,Drain to Soure Voltage(V) 0 8 0 0.5 1 1.5 2 VGS,Gate to Source Voltage(V) 2.5 ID vs. VGS ID vs. VDS 1.8 1 Ta=25℃ RDS(on) On Resistance(Ω) IS,Diode Current(A) 1.7 0.1 150℃ 25℃ -55℃ 0.01 1.6 1.5 VGS=4.50V 1.4 VGS=10.0V 1.3 0.001 1.2 0.2 0.4 0.6 0.8 1 1.2 0 VSD,Diode Forward Voltage(V) IS vs. VSD Leshan Radio Company, LTD. 0.2 0.4 0.6 ID,Drain Current(A) 0.8 RDS(on) vs. ID Rev.D Apr. 2019 4/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES（Con.) 4 1.2 3.5 1.1 3 VGSTH,Threshold Voltage(V) RDS(on),On Resistane (Ω) N-Channel VGS=10V ID=0.8A 2.5 2 VGS=4.5V ID=0.5A 1.5 1 0.5 ID=250uA 1 0.9 0.8 0.7 0.6 0.5 0 0.4 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 -50 -25 0 25 50 75 100 125 150 Tj,Temperature(℃) VGSTH vs. Tj RDS(on) vs. Tj 70 f=1MHz Ta=25℃ 60 C-Capacitance(pF) 50 Ciss 40 30 20 Coss 10 Crss 0 0 10 20 30 40 VDS,Drain to Source Voltage(V) 50 Capacitance Leshan Radio Company, LTD. Rev.D Apr. 2019 5/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES（Con.) P-Channel 0.6 VGS=3V,3.25V,3.5 V 0.6 VDS=10V Ta=25℃ 0.5 VGS=2.75V ID,Drain Current(A) ID,Drain Current(A) 0.5 0.4 VGS=2.5V 0.3 VGS=2.25V 0.2 0.1 0.4 0.3 25℃ 0.2 VGS=2V 0 -55℃ 150℃ 0.1 0 0 2 4 6 VDS,Drain to Soure Voltage(V) 8 0 0.5 1 1.5 2 2.5 3 VGS,Gate to Source Voltage(V) ID vs. VDS 3.5 ID vs. VGS 2.5 1 2.4 RDS(on),On Resistane (Ω) IS,Diode Forward Current(A) 2.3 0.1 150℃ 25℃ -55℃ 0.01 2.2 VGS=4.50V 2.1 2 1.9 1.8 VGS=10.0V 1.7 1.6 0.001 1.5 0.2 0.4 0.6 0.8 1 VSD,Diode Forward Voltage(V) 1.2 0 IS vs. VSD Leshan Radio Company, LTD. 0.2 0.4 0.6 ID,Drain Current(A) 0.8 RDS(on) vs. ID Rev.D Apr. 2019 6/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES（Con.) P-Channel 1.8 4 ID=250uA 1.7 VGSTH,Threshod Voltage(V) RDS(on),On Resistance (℃) 3.5 3 VGS=4.5V,ID=0.13A 2.5 2 VGS=10V,ID=0.52A 1.6 1.5 1.4 1.3 1.2 1.5 1.1 1 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 1 -55 -30 -5 20 45 70 95 Tj,Temperature(℃) 120 145 VGSTH vs. Tj RDS(on) vs. Tj 60 f=1MHz Ta=25℃ C-Capacitance(pF) 50 Ciss 40 30 20 Coss 10 Crss 0 0 5 10 15 VDS,Drain to Source Voltage(V) 20 Capacitance Leshan Radio Company, LTD. Rev.D Apr. 2019 7/8 LBSS8402DW1T1G, S-LBSS8402DW1T1G POWER MOSFET 6.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 0.01 0.078 0.086 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 e L 0.65 BSC 0.26 0.36 0.026 BSC 0.46 0.010 0.014 0.018 L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 7.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.D Apr. 2019 8/8