LBSS84ELT1G

LBSS84ELT1G S-LBSS84ELT1G Power MOSFET 60V P–Channel 1. FEATURES ● Advanced trench cell design. ● High speed switch. ● ● G-S ESD Protected: ±1000V Pb-Free Package is available. ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● Portable appliances. ● Load switch appliances. 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS84ELT1G PE 3000/Tape&Reel 4. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS -60 V Gate–to–Source Voltage VGSS ±20 V Drain Current – Continuous TA = 25°C ID IDM -130 -520 Symbol Limits Unit PD 225 mW – Pulsed (tp≤10μs) mA 5. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC TL 260 ºC Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering Purposes, for 10 seconds 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.E Aug. 2019 1/5 LBSS84ELT1G,,S-LBSS84ELT1G Power MOSFET 60 Volts P–Channel 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Symbol Characteristic Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = -250μA) Min. Typ. Max. -60 - - Unit V μA Zero Gate Voltage Drain Current IDSS (VGS = 0, VDS = -25 V) (VGS = 0, VDS = -60 V) Gate–Body Leakage Current, Forward IGSSF (VGS = 20 V) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 V) - - -0.1 - - -15 - - 10 μA μA - - -10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = -250μA) VGS(th) V -0.9 - -2 Ω Static Drain–Source On–State Resistance RDS(on) (VGS = -5.0 V, ID = -100 mA) (VGS = -10 V, ID = -100 mA) Transfer Admittance |yfs| (VDS = -25 V, ID = -100 mA, f = 1.0 kHz) - 2 1.8 6 5 mS 50 - - - 45 - DYNAMIC CHARACTERISTICS Input Capacitance (VDS = - 25 V,VGS=0V,f=1MHz) Ciss Output Capacitance (VDS = - 25 V,VGS=0V,f=1MHz) Coss Reverse Transfer Capacitance (VDS = - 25 V,VGS=0V,f=1MHz) Crss Total Gate Charge pF pF - 4 - Qg - 1.5 1.1 - Qgs - 0.3 0.2 - Qgd td(on) - 4.8 - tr td(off) - 19 - - 52 - tf - 32 - IS - - -0.13 Pulsed Current ISM - A VSD - -2.2 -0.52 Forward Voltage - V Gate-Source Charge (VDS = -25V, VGS = -4.5V, ID = -0.1A) Gate-Drain Charge pF nC - SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS = –25 V,VGEN =-10V,IDS = –0.1 A,RL =250Ω,RG=6Ω) Fall Time ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current A 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.E Aug. 2019 2/5 LBSS84ELT1G,,S-LBSS84ELT1G Power MOSFET 60 Volts P–Channel 7.ELECTRICAL CHARACTERISTICS CURVES 0.6 0.6 VDS=10V -55℃ 3.25V 3.5V 0.5 0.5 0.4 ID,Drain Current (A) ID,Drain current (A) 150℃ 25℃ 0.3 0.2 0.1 3.0V 0.4 0.3 2.75V 0.2 2.5V 0.1 2.25V 0 0.0 1.0 2.0 3.0 0 4.0 0 VGS,Gate to Source Voltage (V) 2 4 6 8 VDS,Drain to Source Voltage (V) ID vs. VGS ID vs. VDS 7 5.0 4.5 6 4.0 RDSon ON Resistance(Ω) 150℃ RDSon,ON Resistance (Ω) 10 5 4 25℃ 3 -55℃ 2 VGS=4.5V,ID=0.13A 3.5 3.0 2.5 VGS=10V,ID=0.52A 2.0 1.5 1.0 1 0.5 0.0 0 0 0.2 0.4 ID,Drain current (A) 0.6 -50 50 100 150 Tj,Juction Temperature (℃) RDSon vs. Tj RDSon vs. ID Leshan Radio Company, LTD. 0 Rev.E Aug. 2019 3/5 LBSS84ELT1G,,S-LBSS84ELT1G Power MOSFET 60 Volts P–Channel 7.ELECTRICAL CHARACTERISTICS CURVES(Con.) 50 1 f=1MHz, Level=100m V 45 40 -IS,Diode Forward Current (A) Ciss Capacitance (pF) 35 30 25 20 15 10 Coss Crss 150℃ 0.1 25℃ -55℃ 0.01 5 0 0 10 20 VDS,Drain to Source Voltage (V) 30 0.001 0.0 Capacitance Leshan Radio Company, LTD. 0.5 1.0 -VSD ,Diode Forward Voltage(V) 1.5 IS vs. VSD Rev.E Aug. 2019 4/5 LBSS84ELT1G,,S-LBSS84ELT1G Power MOSFET 60 Volts P–Channel 8.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 9.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.E Aug. 2019 5/5