LBSS84LT1G

LESHAN RADIO COMPANY, LTD. Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. • Energy Efficient • Miniature SOT–23 Surface Mount Package Saves Board Space • Pb-Free Package is available. 3 Drain LBSS84LT1G 3 1 2 S OT –23 1 Gate - Marking Diagram 2 Source PD W MAXIMUM RATINGS (T J = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance – Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 50 ± 20 130 520 225 – 55 to 150 556 260 mW °C °C/W °C Unit Vdc Vdc mA W = Work Week ORDERING INFORMATION Device LBSS84LT1G LBSS84LT3G Package SOT-23 SOT-23 Shipping 3000/Tape&Reel 10000/Tape&Reel 1/4 LESHAN RADIO COMPANY, LTD. LBSS84LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2.) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. IS ISM VSD – – – – – 2.5 0.130 0.520 – V A (VDD = –15 Vdc, ID = –2.5 Adc, 15 Vdc, 2.5 Adc, RL = 50 Ω) td(on) tr td(off) tf QT – – – – – 2.5 1.0 16 8.0 6000 – – – – – pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss – – – 30 10 5.0 – – – pF VGS(th) rDS(on) |yfs| 0.8 – 50 – 5.0 – 2.0 10 – Vdc Ohms mS V(BR)DSS IDSS – – – IGSS – – – – – 0.1 15 60 ±60 µAdc 50 – – Vdc µAdc Symbol Min Typ Max Unit TYPICAL ELECTRICAL CHARACTERISTICS 0.6 I D , DRAIN CURRENT (AMPS) 0.5 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 4 VDS = 10 V -55°C 25°C 0.5 0.45 I D , DRAIN CURRENT (AMPS) 0.4 0.3 0.2 0.1 0 0.35 3.0 V 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10 0.25 TJ = 25°C VGS = 3.5 V 3.25 V 150°C 0.15 0.05 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics 2/4 LESHAN RADIO COMPANY, LTD. LBSS84LT1G TYPICAL ELECTRICAL CHARACTERISTICS R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 9 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 -55°C 25°C R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 -55°C 0.5 0.6 25°C VGS = 10 V VGS = 4.5 V 150°C 150°C 0.5 0.6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance versus Drain Current 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -55 -5 45 95 145 VGS = 10 V ID = 0.52 A Figure 4. On–Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 7 6 5 4 3 2 1 0 0 VDS = 40 V TJ = 25°C VGS = 4.5 V ID = 0.13 A ID = 0.5 A 500 1000 1500 2000 TJ, JUNCTION TEMPERATURE (°C) QT, TOTAL GATE CHARGE (pC) Figure 5. On–Resistance Variation with Temperature 1 I D , DIODE CURRENT (AMPS) Figure 6. Gate Charge 0.1 TJ = 150°C 25°C -55°C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage 3/4 LESHAN RADIO COMPANY, LTD. LBSS84LT1G SOT-23 NOTES: A L 3 1 V G 2 BS DIM A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 C D H K J PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 4/4 LESHAN RADIO COMPANY, LTD. EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002’’) (.06’’) A 20.2mm Min (.795’’) 50mm Min (1.969’’) Full Radius G Inside Dimension Measured Near Hub Size 8 mm 12mm 16mm 24 mm A Max 330mm (12.992’’) 330mm (12.992’’) 360mm (14.173’’) 360mm (14.173’’) G 8.4mm+1.5mm, -0.0 (.33’’+.059’’, -0.00) 12.4mm+2.0mm, -0.0 (.49 ’’+ .079’’, -0.00) 16.4mm+2.0mm, -0.0 (.646’’+.078’’, -0.00) 24.4mm+2.0mm, -0.0 (.961’’+.070’’, -0.00) T Max 14.4mm (.56’’) 18.4mm (.72’’) 22.4mm (.882’’) 30.4mm (1.197’’) Reel Dimensions Metric Dimensions Govern –– English are in parentheses for reference only Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) LESHAN RADIO COMPANY, LTD. Shipment Specification CPN LABEL LABEL LABEL 10Reel/Inner Box 30KPCS/Inner Box Dim(Unit:mm) 195mm*195mm*150mm 10 Reel 3000PCS/Reel 8000PCS/Reel (SOT-723,SOD-723) 80KPCS/Inner Box (SOT-723,SOD-723) Dim(Unit:mm) 460mm*400mm*420mm LABEL MARK 乐山无线电股份有限公司 Leshan Radio Company,Ltd. 12 Inner Box/Carton 360KPCS/Carton 960KPCS/Carton (SOT-723,SOD-723)