LBSS84WT1G

LBSS84WT1G S-LBSS84WT1G Power MOSFET 130 mA, 50V P–Channel SC-70 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. ● Energy efficient 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS84WT1G PD 3000/Tape&Reel LBSS84WT3G PD 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Symbol Limits Unit VDSS -50 VGS ±20 V V Drain Current – Continuous TA = 25°C – Pulsed (tp≤10μs) mA ID -130 IDM -520 Symbol Limits Unit PD 225 mW 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC TL 260 ºC 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering Purposes, for 10 seconds 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.G Jul. 2019 1/5 LBSS84WT1G, S-LBSS84WT1G Power MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = -250μA) Min. Typ. Max. -50 - - Unit V μA Zero Gate Voltage Drain Current (VGS = 0, VDS = -25 V) IDSS (VGS = 0, VDS = -50 V) (VGS = 0, VDS = -50 V,TJ=125°C) Gate–Body Leakage Current, Forward IGSSF (VGS = 20 V) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 V) - - - - -0.1 -15 - - -60 μA - - 10 μA - - -10 ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance (VGS = -5.0 V, ID = -100 mA) (VGS = -10 V, ID = -100 mA) V -0.8 - -2 - 2 2 6 5 Ω RDS(on) Transfer Admittance |yfs| (VDS = -25 V, ID = -100 mA, f = 1.0 kHz) mS 50 - - DYNAMIC CHARACTERISTICS Input Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Ciss Output Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Coss Reverse Transfer Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Crss pF - 38 - - 4.8 - pF pF - 2.7 - td(on) - 16.7 - tr td(off) - 8.6 - - 17.9 - tf - 5.3 - IS - - -0.13 A Pulsed Current ISM - - Forward Voltage - -2.5 -0.52 - A VSD SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time (VDS = –15 V,VGS=-10V ,RL = 50Ω,RG=25Ω) Fall Time ns SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current V 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.G Jul. 2019 2/5 LBSS84WT1G, S-LBSS84WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 0.7 0.8 VDS=10V 0.7 ID,Drain Current(A) ID,Drain Current(A) 0.6 0.5 0.4 150℃ 0.3 25℃ VGS=-3.5V 0.6 VGS=-3.25V 0.5 VGS=-3V 0.4 VGS=-2.5V VGS=-2.75V 0.3 VGS=-2.25V 0.2 0.2 -55℃ 0.1 0.1 0 0 1 1.5 2 2.5 VGS, Gate-to-Source Voltage(V) 3 0 Transfer Characteristics 10 On-Region Characteristics 3.5 4 VGS=-10V 3.5 RDS(on), Drain-to-source Resistance(Ω） VGS=-5V RDS(on), Drain-to-source Resistance(Ω） 2 4 6 8 VDS,Drain-to-source Voltage(V) 150℃ 3 2.5 2 25℃ 1.5 -55℃ 1 0.5 150℃ 3 2.5 2 25℃ 1.5 -55℃ 1 0.5 0 0 0 0.1 0.2 0.3 0.4 ID, Drain Current(A) 0.5 0.6 RDS(on) vs. ID Leshan Radio Company, LTD. 0 0.1 0.2 0.3 0.4 ID, Drain Current(A) 0.5 0.6 RDS(on) vs. ID Rev.G Jul. 2019 3/5 LBSS84WT1G, S-LBSS84WT1G Power MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1 ID=-0.52A,VGS=-10V 1.6 150℃ 1.2 ID=-0.13A,VGS=-5V IS, Drain Current(A) RDS(on), Drain-to-Source Resistance(Ω） 2 0.1 25℃ -55℃ 0.01 0.8 0.001 0.4 -55 -5 45 95 Temperature(℃） 145 0 0.5 1 VSD,Diode Forward Voltage(V) 1.5 IS vs. VSD RDS(on) vs. Temperature 50 f=1.0MHz Ta=25℃ 45 Capacitance(pF) 40 Ciss 35 30 25 20 15 10 Coss 5 Crss 0 0 5 10 15 20 25 30 35 40 45 50 VDS(V) Capacitor vs. VDS Leshan Radio Company, LTD. Rev.G Jul. 2019 4/5 LBSS84WT1G, S-LBSS84WT1G Power MOSFET 7.OUTLINE AND DIMENSIONS SC70 DIM MIN NOR MAX A 0.80 0.95 1.00 A1 0.00 0.05 0.7 REF 0.10 0.30 0.35 0.40 A2 b c 0.10 0.15 0.25 D 1.80 2.05 2.20 E 1.15 1.30 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.20 0.35 0.56 He 2.00 2.10 2.40 ALL Dimension in mm 8.SOLDERING FOOTPRINT SC70 Leshan Radio Company, LTD. Rev.G Jul. 2019 DIM MIN A 1.90 B 0.65 C 0.65 X 0.70 Y 0.90 5/5