LBTP460Z4TZHG

LBTP460Z4TZHG S-LBTP460Z4TZHG 60 V PNP TRANSISTOR 1. FEATURES ● Low collector-emitter saturation voltage ● High collector current capability ● High collector current gain ● High efficiency due to less heat generation ● Smaller required Printed-Circuit Board (PCB) ● MM:>400V, HBM:>8000V ● We declare that the material of product compliance with SOT223 RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking LBTP460Z4TZHG PD Shipping 1000/Tape&Reel PD YW 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -60 V Collector–Base Voltage VCBO -60 V Emitter–Base Voltage VEBO -5 V Collector Current — Continuous IC -4.5 A Peak Pulse Current(tp ≤ 1 ms) ICM -9 A TJ,Tstg −55∼+150 ºC Symbol Limits Unit PD 1 W RΘJA 125 ºC/W RΘJC 30 ºC/W Junction and Storage temperature Marking Date Code 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) Thermal Resistance, Junction–to–Case 1. FR–4 = 30.0mm×25.0mm×1.6mm. Leshan Radio Company, LTD. Rev.C Oct. 2020 1/6 LBTP460Z4TZHG, S-LBTP460Z4TZHG 60 V PNP TRANSISTOR 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = -1 mA,IB = 0) Collector–Base Breakdown Voltage (IC = -100 µA,IE = 0) Emitter–Base Breakdown Voltage (IE = -100 µA,IC = 0) Symbol Min. Typ. Max. Unit VBR(CEO) -60 - - V VBR(CBO) -60 - - V VBR(EBO) -5 - - V ICBO - - -100 nA - - -50 µA IEBO - - -100 nA ICEO - - -10 µA 200 295 - 200 270 - Collector Cutoff Current (VCB = -60V,IE = 0 A) (VCB = -60V,IE = 0 A, Tj = 150 °C) Emitter CutOff Current (VEB = −5 V, IC = 0 A ) Collector-Emitter cutoff Current (VCE= -60V,IB=0) ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = −2 V, IC = −0.5 A) (VCE = −2 V, IC = −1 A) (VCE = −2 V, IC = −2 A) HFE 150 230 - (VCE = −2 V, IC = −4 A) 120 170 - (VCE = −2 V, IC = −6 A) 60 100 - (IC = −0.5 A, IB = −50 mA) - -35 -50 (IC = −1 A, IB = −50 mA) - -65 -90 - -130 -190 - -165 -230 (IC = −4 A, IB = −200 mA) - -210 -300 (IC = −4 A, IB = −400 mA) - -160 -230 (IC = −4.5 A, IB = −225 mA) - -265 -375 - -0.81 -0.9 - -0.93 -1.05 - -0.77 -0.85 Collector–Emitter Saturation Voltage (IC = −1 A, IB = −10 mA) (IC = −2 A, IB = −40 mA) VCE(sat) mV Base–Emitter Saturation Voltage (IC = −1 A, IB = −100 mA) VBE(sat) (IC = −4 A, IB = −400 mA) Base-Emitter Turn-On Voltage (VCE = −2 V, IC = −2 A) Leshan Radio Company, LTD. VBE(on) Rev.C Oct. 2020 V V 2/6 LBTP460Z4TZHG, S-LBTP460Z4TZHG 60 V PNP TRANSISTOR 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) SMALL–SIGNAL CHARACTERISTICS Transitional Frequency (VCE = −10 V, IC = −100 mA,f = 100 MHz) Collector capacitance (VCB = −10 V, IE = ie = 0 A,f = 1 MHz) SWITCHING CHARACTERISTICS Delay time Rise time Turn-on time Storage time (VCC = −12.5 V, IC = −3 A,IB(on) = −0.15 A,IB(off) = 0.15 A) Fall time Turn-off time fT - 102 - MHz Cc - 66.5 120 pF td - 15 - tr - 65 - ton - 80 - ts - 225 - tf - 95 - toff - 320 - ns 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.C Oct. 2020 3/6 LBTP460Z4TZHG, S-LBTP460Z4TZHG 60 V PNP TRANSISTOR 6.ELECTRICAL CHARACTERISTICS CURVES 500 2.5 IB=10mA VCE=2.0V 450 150℃ 400 2.0 IB=9mA 350 25℃ 250 IB=7mA 1.5 IC(A) HFE 300 IB=5mA 200 1.0 IB=4mA -55℃ 150 IB=3mA 100 0.5 IB=2mA 50 IB=1mA 0 0.001 0.0 0.01 0.1 IC(A) 1 10 0 1 2 3 4 5 VCE(V) HFE vs. IC IC vs. VCE IC=400mA IC=800mA 1.2 2.5 IC=1A IC=60mA IC=10mA 2.0 VCE=2.0V 1.0 IC=600mA IC=110mA -55℃ 0.8 VBE(on) (V) VCE(V) IC=160mA 1.5 IC=200mA 1.0 25℃ 0.6 0.4 150℃ 0.5 0.0 0.01 0.2 0.1 1 10 0.0 0.001 IB(A) 0.1 IC(A) 1 10 VBE(on) vs IC VCE vs. IB Leshan Radio Company, LTD. 0.01 Rev.C Oct. 2020 4/6 LBTP460Z4TZHG, S-LBTP460Z4TZHG 60 V PNP TRANSISTOR 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.2 0.35 IC/IB=10 -55℃ 150℃ IC/IB=10 0.30 1.0 0.25 VCE(sat) (V) VBE(sat) (V) 0.8 25℃ 0.6 0.20 25℃ 0.15 150℃ 0.4 0.10 0.2 0.05 0.0 0.001 0.00 0.001 0.01 0.1 IC(A) 1 10 -55℃ 0.01 0.1 IC(A) 1 10 VCE(sat) vs. IC VBE(sat) vs. IC 100 800 f=1MHz Ta=25℃ 700 Cibo 100µs,10µs,1µs 10 1ms 500 10ms 1 IC(A) Capacitance(pF) 600 400 DC result 0.1 300 Cobo 200 Max Voltage 0.01 100 0.001 0 0.1 1 10 100 0.1 10 100 VCEO(V) VR(V) Capacitance Leshan Radio Company, LTD. 1 Safe Operating Area Rev.C Oct. 2020 5/6 LBTP460Z4TZHG, S-LBTP460Z4TZHG 60 V PNP TRANSISTOR 7.OUTLINE AND DIMENSIONS SOT223 D b1 C E HE ɵ1 ɵ1 L1 A2 b2 Gauge Plane Seating Plane L L1 0.25 ɵ e1 e DIM A A1 A2 b1 b2 c D E e e1 HE L L1 θ θ1 SOT223 MIN NOR 1.50 1.60 0.00 0.05 0.80 0.90 2.90 3.02 0.60 0.72 0.20 0.27 6.30 6.50 3.30 3.50 4.60BSC 2.30BSC 6.80 7.00 0.80 1.00 1.75(REF) 0º~8º 8º 10º All Dimensions in mm MAX 1.70 0.10 1.00 3.10 0.80 0.35 6.70 3.70 7.20 1.20 12º A GENERAL NOTES A1 1. Top package surface finish Ra0.4±0.2um 2. Bottom package surface finish Ra0.7±0.2um 3. Side package surface finish Ra0.4±0.2um 4. Protrusion or Gate Burrs shall not exceed 0.10mm per side. 8.SOLDERING FOOTPRINT Y1 X1 C2 DIM X1 Y1 X2 Y2 C1 C2 Y2 X2 SOT223 (mm) 3.80 2.00 1.20 2.00 2.30 6.30 C1 Leshan Radio Company, LTD. C1 Rev.C Oct. 2020 6/6 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.