LBTP660Z4TZHG

LBTP660Z4TZHG S-LBTP660Z4TZHG General Purpose Transistors PNP Silicon 1. FEATURES ● SOT223 We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S-prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBTP660Z4TZHG A9 1000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO -60 V Collector–Base Voltage VCBO -100 V Emitter–Base Voltage VEBO -6 V IC -6 A Collector Current — Continuous Peak collector current Junction and Storage temperature ICM -12 A TJ,Tstg −55∼+150 ºC Symbol Limits Unit PD 833 mW RΘJA 150 ºC/W 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25ºC Thermal Resistance, Junction–to–Ambient(Note 1) 1. FR–4 = 30.0mm×25.0mm×1.6mm. Leshan Radio Company, LTD. Rev.B Dec. 2020 1/5 LBTP660Z4TZHG,S-LBTP660Z4TZHG General Purpose Transistors PNP Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Collector–Emitter Breakdown Voltage (IC=-10mA,IB=0) Collector–Base Breakdown Voltage (IC=-100µA,IE=0) Emitter–Base Breakdown Voltage (IE=-100µA,IC=0) Collector-Base cut-off current (VCB = -100 V, IE = 0) Emitter-Base cut-off current (VEB =-6V, IC =0) Collector-Emitter cutoff Current (IB=0, VCE = -60V) Symbol Min. Typ. Max. Unit VBR(CEO) -60 - - V VBR(CBO) -100 - - V VBR(EBO) -6 - - V ICBO - - -100 nA IEBO - - -100 nA ICEO - - -10 µA 150 - - DC Current Gain (VCE = -2 V,IC = -500mA) (VCE = -2 V,IC = -1A) HFE 120 - 360 (VCE = -2 V,IC = -2A) 100 - - (VCE = -2 V,IC = -6A) 70 - - (IC=-100mA,IB=-2mA) - - -50 (IC=-1A,IB=-100mA) - - -70 - - -120 (IC=-3A,IB=-300mA) - - -250 (IC=-6A,IB=-600mA) - - -350 VBE(sat) - - -1 V fT 100 - - MHz Cibo - 360 - pF Cobo - 60 - pF Collector–Emitter Saturation Voltage (IC=-2A,IB=-200mA) Base-Emitter saturation voltage(Note 2) (IC=-1A, IB=-100mA) Transition Frequency (VCE = -10 V, IC = -500 mA,f = 1 MHz) Input Capacitance (VEB = -5.0 V, f = 1.0 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) VCE(sat) mV 2.tp ≤ 300 µs,δ ≤ 0.02; Leshan Radio Company, LTD. Rev.B Dec. 2020 2/5 LBTP660Z4TZHG,S-LBTP660Z4TZHG General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 500 7 VCE=2V 150℃ IB=40mA 6 VCE Collector to Emittor (V) HFE Dc Gain 400 300 25℃ 200 -55℃ IB=30mA 5 4 IB=20mA IB=15mA 3 IB=10mA 2 100 IB=5mA 1 0 0.002 0 0.02 0.2 2 20 0 1 2 3 4 IC Collector Current (A) IC Collector Current (A) IC vs. VCE HFE vs. IC 1.4 1.0 0.9 IC=1mA IC=10mA 1.2 0.8 0.6 VCE=2V IC=100mA IC=30mA 1.0 IC=50mA VBE(on) (V) 0.7 VCE(sat) (V) 5 0.5 0.4 0.3 0.8 0.6 0.4 -55℃ 25℃ 150℃ 0.2 0.2 0.1 0.0 0.000001 0.00001 0.0001 0.001 0.01 0.2 20 IC Collector Current (A) IB, Base Current (A) VBE(on) vs. IC VCE(sat) vs. IB Leshan Radio Company, LTD. 0.0 0.002 Rev.B Dec. 2020 3/5 LBTP660Z4TZHG,S-LBTP660Z4TZHG General Purpose Transistors PNP Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.4 1.0 0.9 IC/IB=10 1.2 IC/IB=10 0.8 1.0 VBE(sat) (V) VCE(sat) (V) 0.7 0.6 0.5 0.4 0.3 150℃ -55℃ 0.8 0.6 25℃ 0.4 150℃ 0.2 0.2 0.1 25℃, -55℃ 0.0 0.002 0.02 0.2 2 20 IC,Collector Current (A) 0.0 0.002 0.2 IC Collector Current (A) 20 VBE(sat) vs. IC VCE(sat) vs. IC 900 Ta=25℃ f=1MHz 800 CT Capacitor (pF) 700 600 500 Cibo 400 300 200 100 Cobo 0 0 10 20 30 40 50 VR Reverse Voltage (V) CT vs. VR Leshan Radio Company, LTD. Rev.B Dec. 2020 4/5 LBTP660Z4TZHG,S-LBTP660Z4TZHG General Purpose Transistors PNP Silicon 7.OUTLINE AND DIMENSIONS SOT223 D b1 C E HE ɵ1 ɵ1 L1 A2 b2 Gauge Plane Seating Plane L L1 0.25 ɵ e1 e DIM A A1 A2 b1 b2 c D E e e1 HE L L1 θ θ1 SOT223 MIN NOR 1.50 1.60 0.00 0.05 0.80 0.90 2.90 3.02 0.60 0.72 0.20 0.27 6.30 6.50 3.30 3.50 4.60BSC 2.30BSC 6.80 7.00 0.80 1.00 1.75(REF) 0º~8º 8º 10º All Dimensions in mm MAX 1.70 0.10 1.00 3.10 0.80 0.35 6.70 3.70 7.20 1.20 12º A GENERAL NOTES A1 1. Top package surface finish Ra0.4±0.2um 2. Bottom package surface finish Ra0.7±0.2um 3. Side package surface finish Ra0.4±0.2um 4. Protrusion or Gate Burrs shall not exceed 0.10mm per side. 8.SOLDERING FOOTPRINT Y1 X1 C2 DIM X1 Y1 X2 Y2 C1 C2 Y2 X2 SOT223 (mm) 3.80 2.00 1.20 2.00 2.30 6.30 C1 Leshan Radio Company, LTD. C1 Rev.B Dec. 2020 5/5 DISCLAIMER ● Before you use our Products, you are requested to carefully read this document and fully understand its contents. LRC shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any LRC’s Products against warning, caution or note contained in this document. ● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales representative.