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LBZT52B30T1G

LBZT52B30T1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD-123

  • 描述:

    稳压二极管 Vz=30V 29.19V~30.69V Izt=5mA P=500mW SOD123

  • 数据手册
  • 价格&库存
LBZT52B30T1G 数据手册
LESHAN RADIO COMPANY, LTD. Surface Mount Zener Diodes LBZT52B2V0T1G Series Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V *Pb-Free package is available 1 2 Mechanical Data: SOD-123 *Case : SOD-123 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208 *Polarity: Cathode Indicated by Polarity Band *Marking: Marking Code (See Specific marking table) *Weigh: 0.01grams(approx) Equivalent Circuit Diagram 1 Cathode Maximum Ratings and Electrical Characteristics Characteristics Thermal Resistance Junction to Ambient Air (TA=25 C Unless Otherwise Noted) Value Unit PD 500 0 mW R JA 305 C/W VF 0.9 V Tj,TSTG -55 to +150 Forward Voltage @ IF=10mA Junction and Storage Temperature Range Anode Symbol Total Power Dissipation on FR-5 Board (1) (1) 2 C - - - - NOTES: 1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm Ratings and Characteristic curves Marking 02 LBZT52B2V2T1G LBZT52B2V4T1G 12 22 LBZT52B2V7T1G 32 LBZT52B3V0T1G 42 LBZT52B13T1G 35 LBZT52B3V3T1G LBZT52B3V6T1G 52 LBZT52B15T1G 62 LBZT52B16T1G 45 55 LBZT52B3V9T1G 72 LBZT52B4V3T1G LBZT52B4V7T1G LBZT52B5V1T1G LBZT52B5V6T1G LBZT52B6V2T1G LBZT52B6V8T1G LBZT52B7V5T1G LBZT52B8V2T1G 82 LBZT52B18T1G LBZT52B20T1G LBZT52B22T1G LBZT52B24T1G LBZT52B27T1G LBZT52B30T1G LBZT52B33T1G LBZT52B36T1G - Jul. 2019 Marking Device LBZT52B9V1T1G L2 LBZT52B10T1G 05 LBZT52B11T1G 15 LBZT52B12T1G 25 65 75 85 95 A5 C5 E5 F5 - 0.6 , Device LBZT52B2V0T1G PD ,POWER DISSIPATION(W) Device Marking Code 92 A2 C2 E2 F2 H2 J2 2 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 TA,AMBIENT TEMPERATURE( C) FIG. 1 Power Disspation vs Ambient temperaute O Rev.A 1/3 LESHAN RADIO COMPANY, LTD. LBZT52B2V0T1G Series Electrical Characteristics ( TA =25 C unless otherwise noted, VF =0.9V Max@ IF =10mA) Zener voltage Operating resistance Rising operating resistance ZZ(Ω) Zzk(Ω) VZ(V) Device Max. IZ (mA) Reverse curre IR(µA) Max. IZ (mA) Max. VR (V) Min. Max. IZ (mA) LBZT52B2V0T1G 2.020 2.200 5 100 5 1000 0.5 120 0.5 0.5 LBZT52B2V2T1G 2.220 2.410 5 100 5 1000 LBZT52B2V4T1G 2.430 2.630 5 100 5 1000 120 0.7 0.5 100 1.0 LBZT52B2V7T1G 2.690 2.910 5 110 5 LBZT52B3V0T1G 3.010 3.220 5 120 5 1000 0.5 100 1.0 1000 0.5 50 1.0 LBZT52B3V3T1G 3.320 3.530 5 120 5 1000 0.5 20 1.0 LBZT52B3V6T1G 3.600 3.845 5 100 5 1000 1.0 10 1.0 LBZT52B3V9T1G 3.890 4.160 5 100 5 1000 1.0 5 1.0 LBZT52B4V3T1G 4.170 4.430 5 100 5 1000 1.0 5 1.0 LBZT52B4V7T1G 4.550 4.750 5 100 5 800 0.5 2 1.0 LBZT52B5V1T1G 4.980 5.200 5 80 5 500 0.5 2 1.5 LBZT52B5V6T1G 5.490 5.730 5 60 5 200 0.5 1 2.5 LBZT52B6V2T1G 6.060 6.330 5 60 5 100 0.5 1 3.0 LBZT52B6V8T1G 6.650 6.930 5 40 5 60 0.5 0.5 3.5 LBZT52B7V5T1G 7.280 7.600 5 30 5 60 0.5 0.5 4.0 LBZT52B8V2T1G 8.020 8.360 5 30 5 60 0.5 0.5 5.0 LBZT52B9V1T1G 8.850 9.230 5 30 5 60 0.5 0.5 6.0 LBZT52B10T1G 9.770 10.210 5 30 5 60 0.5 0.1 7.0 LBZT52B11T1G 10.760 11.220 5 30 5 60 0.5 0.1 8.0 LBZT52B12T1G 11.740 12.240 5 30 5 80 0.5 0.1 9.0 LBZT52B13T1G 12.910 13.490 5 37 5 80 0.5 0.1 10.0 LBZT52B15T1G 14.340 14.980 5 42 5 80 0.5 0.1 11.0 LBZT52B16T1G 15.850 16.510 5 50 5 80 0.5 0.1 12.0 LBZT52B18T1G 17.560 18.350 5 65 5 80 0.5 0.1 13.0 LBZT52B20T1G 19.520 20.390 5 85 5 100 0.5 0.1 15.0 LBZT52B22T1G 21.540 22.470 5 100 5 100 0.5 0.1 17.0 LBZT52B24T1G 23.720 24.780 5 120 5 120 0.5 0.1 19.0 LBZT52B27T1G 26.190 27.530 5 150 5 150 0.5 0.1 21.0 LBZT52B30T1G 29.190 30.690 5 200 5 200 0.5 0.1 23.0 LBZT52B33T1G 32.150 33.790 5 250 5 250 0.5 0.1 25.0 35.070 36.870 5 300 5 300 0.5 0.1 27.0 LBZT52B36T1G Notes) 1. The Zener voltage (Vz) is measured 40ms after power is supplied. 2. The operating resistances (Zz, Zzk) are measured by superimposing a minute alternating current on the regulated current (Iz). Jul. 2019 Rev.A 2/3 LESHAN RADIO COMPANY, LTD. LBZT52B2V0T1G Series SOD−123 D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A A1 1 HE DIM A A1 b c D E HE L E b MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE L 2 MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 C SOLDERING FOOTPRINT* ÉÉÉ ÉÉÉ ÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ SCALE 10:1 Jul. 2019 1.22 0.048 mm Ǔ ǒinches Rev.A 3/3
LBZT52B30T1G 价格&库存

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LBZT52B30T1G
  •  国内价格
  • 20+0.17740
  • 100+0.15320
  • 300+0.12900
  • 800+0.09680
  • 3000+0.08060

库存:1855

LBZT52B30T1G
  •  国内价格
  • 1+0.09800
  • 30+0.09450
  • 100+0.09100
  • 500+0.08400
  • 1000+0.08050
  • 2000+0.07840

库存:2298

LBZT52B30T1G
    •  国内价格
    • 20+0.16125
    • 200+0.13220
    • 600+0.11610

    库存:39