LBZX84C3V9LT3G

LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes LBZX84C2V4LT1G Series • We declare that the material of product compliance with S-LBZX84C2V4LT1G RoHS requirements. Series • S- Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 2 SOT– 23 (TO–236AB) PLASTIC MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds 3 Cathode 1 Anode THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(Note 1) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2),TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Symbol Max Unit PD 225 mW R θJA PD 1.8 556 300 mW/°C °C/W mW R θJA 2.4 417 mW/°C °C/W -55to+150 °C Junction and Storage Temeprature T J , T stg Note 1. FR-5 = 1.0 x 0.75 x 0.62 in. Note 2.Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Ordering Information Device Package Shipping LBZX84C2V4LT1G Series SOT-23 3000/Tape&Reel LBZX84C2V4LT3G Series SOT-23 10000/Tape&Reel Rev.B 1/5 LESHAN RADIO COMPANY, LTD. LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) VZ2 (V) @ IZT2 = 1 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA Min Max ZZT2 (W) @ IZT2 = 1 mA LBZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 LBZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 LBZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 LBZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 LBZX84C3V6LT1G Z15 3.4 3.6 3.8 90 LBZX84C3V9LT1G Z16 3.7 3.9 4.1 90 LBZX84C4V3LT1G W9 4 4.3 4.6 LBZX84C4V7LT1G Z1 4.4 4.7 LBZX84C5V1LT1G Z2 4.8 5.1 LBZX84C5V6LT1G Z3 5.2 5.6 LBZX84C6V2LT1G Z4 5.8 6.2 LBZX84C6V8LT1G Z5 6.4 6.8 LBZX84C7V5LT1G Z6 7 LBZX84C8V2LT1G Z7 7.7 LBZX84C9V1LT1G Z8 Device* VZ3 (V) @ IZT3 = 20 mA (Note 3) Max Reverse Leakage Current qVZ (mV/k) @ IZT1 = 5 mA Min Max ZZT3 (W) @ IZT3 = 20 mA Min Max C (pF) @ VR = 0 f = 1 MHz 2.6 3.2 50 50 1 −3.5 0 450 600 3 3.6 50 20 1 −3.5 0 450 600 3.3 3.9 50 10 1 −3.5 0 450 2.9 600 3.6 4.2 40 5 1 −3.5 0 450 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 IR mA VR @ Volts LBZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 LBZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 LBZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 LBZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 LBZX84C15LT1G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 LBZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 LBZX84C18LT1G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 LBZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 LBZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 LBZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 VZ1 Below @ IZT1 = 2 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA LBZX84C27LT1G Y10 25.1 27 28.9 LBZX84C30LT1G Y11 28 30 32 LBZX84C33LT1G Y12 31 33 35 LBZX84C36LT1G Y13 34 36 LBZX84C39LT1G Y14 37 39 LBZX84C43LT1G Y15 40 LBZX84C47LT1G Y16 LBZX84C51LT1G Y17 LBZX84C56LT1G LBZX84C62LT1G VZ2 Below @ IZT2 = 0.1 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA 80 25 28.9 80 27.8 32 80 30.8 38 90 41 130 43 46 44 47 48 51 Y18 52 Y19 58 LBZX84C68LT1G Y20 LBZX84C75LT1G Y21 Device VZ3 Below @ IZT3 = 10 mA Min Max ZZT3 Below @ IZT3 = 10 mA 300 25.2 29.3 45 300 28.1 32.4 50 35 325 31.1 35.4 33.8 38 350 34.1 36.7 41 350 37.1 150 39.7 46 375 50 170 43.7 50 54 180 47.6 54 56 60 200 51.5 62 66 215 57.4 64 68 72 240 70 75 79 255 Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 0.05 21 24.4 29.4 70 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 41.5 70 0.05 27.3 33.4 41.2 45 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 IR mA @ Note 3.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C. Rev. B 2/5 LESHAN RADIO COMPANY, LTD. LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 TYPICAL TC VALUES VZ @ IZT 10 1 12 10 Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 100 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE Figure 3. Effect of Zener Voltage on Zener Impedance 100 1 0.4 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) 1.1 Figure 4. Typical Forward Voltage Rev.B 3/5 1.2 LESHAN RADIO COMPANY, LTD. LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series TYPICAL CHARACTERISICS 1000 1000 T A = 25°C 0 V BIAS I R , LEAKAGE CURRENT (µA) 100 C, CAPACITANCE (pF) 1 V BIAS 100 BIAS AT 50% OF V Z NOM 10 1 1 10 100 10 1 +150°C 0.1 0.01 +25°C 0.001 –55°C 0.0001 0.00001 0 10 20 30 40 50 60 80 V Z , NOMINAL ZENER VOLTAGE (V) V Z , NOMINAL ZENER VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 90 100 100 T A = 25°C I Z , ZENER CURRENT (mA) T A = 25°C I Z , ZENER CURRENT (mA) 70 10 1 0.1 10 1 0.1 0.01 0 0 2 4 6 8 10 12 10 30 50 70 90 V Z , ZENER VOLTAGE (V) V Z , ZENER VOLTAGE (V) Figure 7. Zener Voltage versus Zener Current (V Z Up to 12 V) Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Rev.B 4/5 LESHAN RADIO COMPANY, LTD. LBZX84C2V4LT1G Series S-LBZX84C2V4LT1G Series OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 1 1.11 0.035 0.04 0.044 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 0.02 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.12 0.075 0.081 --- 10° SOLDERING FOOTPRINT Rev.B 5/5