LDN2367T1G

LDN2367T1G S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 1. FEATURES ● VDS = 20V,ID=6A ● RDS(ON),VGS@4.5V,IDS@4.5A=20mΩ ● RDS(ON),VGS@2.5V,IDS@3.5A=25mΩ ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● SOT26(TSOP-6) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● High power and current handing capability ● Lead free product is acquired ● Surface mount package 2. APPLICATIONS Battery protection ● Load switch ● Power management ● 3. DEVICE MARKING AND ORDERING INFORMATION Device Marking LDN2367T1G 206 3000/Tape&Reel LDN2367T3G 206 10000/Tape&Reel Shipping 4. Absolute Maximum Ratings (TA =25 ℃unless otherwise noted) Parameter Symbol Limits Unit Drain–Source Voltage VDS 20 V Gate–Source Voltage VGS ±12 V ID 6.3 A Drain Current-Continuous Drain Current-Pulsed (Note1) IDM 25 A Maximum Power Dissipation PD 1.5 W ℃ Operating Junction and Storage Temperature Range TJ ,TSTG -55 ~ +150 Note:1. Repetitive Rating: Pulse width limited by maximum junction temperature. 5. THERMAL CHARACTERISTICS Parameter Thermal Resistance,Junction-to-Ambient (Note 2) Symbol Limits Unit RθJA 83 ℃/W Note:2. Surface Mounted on FR4 Board, t ≤ 10 sec. Leshan Radio Company, LTD. Rev.D Sep. 2019 1/7 LDN2367T1G, S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Parameter Off Characteristics Drain-Source Breakdown Voltage (VGS =0V ID =250μA) Zero Gate Voltage Drain Current (VDS =20V,VGS =0V) Gate-Body Leakage Current (VGS =±12V,VDS =0V) On Characteristics (Note 3) Gate Threshold Voltage (VDS =V GS ,ID =250μA) Symbol BVDSS IDSS IGSS VGS(th) Min. Typ. Max. Unit V 20 - μA - - 1 nA - - ±100 0.5 0.7 1.2 V - 16 22 mΩ - 27 25 mΩ Drain-Source On-State Resistance (VGS =4.5V, ID =4.5A) (VGS =2.5V, ID =3.5A) (VGS =4.5 V, ID =6A) - 19 - (VGS =2.5V, ID =5A) - - 32 mΩ - 47 mΩ - 10 - S RDS(ON) (VGS =1.8V, ID =1A) Forward Transconductance (VDS =5V,ID =4.5A) gFS mΩ Dynamic Characteristics (Note4) Input Capacitance (VDS =10V,VGS =0V,F=1.0MHz) Output Capacitance (VDS =10V,VGS =0V,F=1.0MHz) Reverse Transfer Capacitance (VDS =10V,VGS =0V,F=1.0MHz) Gate-Resistance (VGS = 0 V, VDS=0V,f=1MHz) Switching Characteristics (Note 4) Turn-on Delay Time (VDD =10V,ID =1A VGS =4.5V,RGEN =6Ω) Turn-on Rise Time (VDD =10V,ID =1A VGS =4.5V,RGEN =6Ω) Turn-Off Delay Time (VDD =10V,ID =1A VGS =4.5V,RGEN =6Ω) Turn-Off Fall Time (VDD =10V,ID =1A VGS =4.5V,RGEN =6Ω) Total Gate Charge (VDS =10V,ID =6A, VGS =4.5V) Gate-Source Charge (VDS =10V,ID =6A, VGS =4.5V) Gate-Drain Charge (VDS =10V,ID =6A, VGS =4.5V) Leshan Radio Company, LTD. Clss Coss Crss Rg td(on) tr td(off) tf Qg Qgs Qgd Rev.D Sep. 2019 PF - 900 PF - 220 PF - 100 Ω - 1.9 nS - 10 20 nS - 11 25 nS - 35 70 - 30 60 nS nC - 12 15 - 2.3 - nC nC - 1 - 2/7 LDN2367T1G, S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 6. ELECTRICAL CHARACTERISTICS (Con.)(Ta= 25 ºC) Drain-Source Diode Characteristics Turn-On Delay Time VSD (VGS =0V,IS =1.0A) IS Diode Forward Current (Note2) Note: 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. - 0.75 - 1.5 1.0 V A 4. Guaranteed by design, not subject to production Leshan Radio Company, LTD. Rev.D Sep. 2019 3/7 LDN2367T1G, S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES VGS=1.5V,2V,2.5V,3V 7 8 VDS=10V 7 6 VGS=1.4V 6 5 5 4 ID(A) ID(A) VGS=1.3V 25℃ 4 150℃ 3 -55℃ 3 VGS=1.2V 2 2 1 1 VGS=1.1V 0 0 0 1 2 3 4 0 5 0.5 1 VDS(V) VGS(V) ID vs. VDS ID vs. VGS 10 0.050 0.045 0.040 0.035 150℃ 25℃ RDS(on) (Ω) IS(A) 1 -55℃ 0.1 VGS=1.8V 0.030 0.025 VGS=2.5V 0.020 VGS=4.5V 0.015 0.010 0.005 0.01 0.000 0.2 0.4 0.6 VSD(V) 0.8 1 2 3 4 5 6 ID(A) RDS(on) vs. ID IS vs. VSD Leshan Radio Company, LTD. 1 Rev.D Sep. 2019 4/7 LDN2367T1G, S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES（Con.） 0.04 0.10 ID=6.0A 0.09 0.08 0.03 VGS=2.5V,ID=5.0A RDS(on) (Ω) RDS(on) (Ω) 0.07 0.06 0.05 0.04 150℃ 0.03 0.02 VGS=4.5V,ID=6.0A 0.01 25℃ 0.02 -55℃ 0.01 0.00 0.00 1 2 3 VGS(V) 4 -50 5 -25 0 75 100 125 150 RDS(on) vs. Tj RDS(on) vs. VGS 0.9 900 0.8 0.7 700 0.6 600 0.5 0.4 0.3 f=1.0MHz Ta=25℃ 800 ID=250uA Capacitance(pF) VGSTH(V) 25 50 Tj(℃) 500 Ciss 400 300 0.2 200 0.1 100 0 Coss Crss 0 -50 -25 0 25 50 75 Tj(℃) 100 125 150 VGSTH vs. Tj Leshan Radio Company, LTD. 0 5 10 VDS(V) 15 20 Capacitance Rev.D Sep. 2019 5/7 LDN2367T1G, S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 7.ELECTRICAL CHARACTERISTICS CURVES（Con.） 100 1us 10us 10 ID(A) 100us 1 1ms 10ms 0.1 DC result 0.01 0.1 1 10 100 VDS(V) SOA Leshan Radio Company, LTD. Rev.D Sep. 2019 6/7 LDN2367T1G, S-LDN2367T1G N-Channel Enhancement Mode Power MOSFET 8.OUTLINE AND DIMENSIONS DIM SOT26 MIN NOR MAX A A1 0.90 0.01 1.00 0.06 1.10 0.10 b c D 0.30 0.10 0.40 0.17 0.50 0.20 2.80 1.50 0.85 2.90 1.60 0.95 3.00 1.70 1.05 1.80 0.20 1.90 0.40 2.00 0.60 E e e1 L L1 HE θ 0.60REF 2.60 2.80 3.00 0° - 10° 9.SOLDERING FOOTPRINT SOT26 DIM (mm) X 0.70 0.90 Y A 2.40 0.95 B C 0.95 Leshan Radio Company, LTD. Rev.D Sep. 2019 7/7