LDTB123YLT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB123YLT1G S-LDTB123YLT1G Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. • We declare that the material of product compliance with RoHS requirements. • 3 1 2 SOT-23 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE zAbsolute maximum ratings (Ta=25°C) Limits Parameter Symbol Supply voltage VCC −50 Input voltage VIN −12 to +5 V R1 3 COLLECTOR R2 2 EMITTER Unit V Output current IC −500 mA Power dissipation PD Tj 200 mW Junction temperature 150 C Storage temperature Tstg −55 to +150 C DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTB123YLT1G S-LDTB123YLT1G F52 2.2 10 3000/Tape & Reel LDTB123YLT3G S-LDTB123YLT3G F52 2.2 10 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. VI(off) − − −0.3 VI(on) −2 − − VO(on) − −0.1 −0.3 V II − − −3.0 mA VI= −5V IO(off) − − −0.5 µA VCC= −50V, VI= 0V DC current gain GI 56 − − − Input resistance R1 1.54 2.2 2.86 kΩ Resistance ratio R2/R1 3.6 4.5 5.5 − fT − 200 − MHz Parameter Input voltage Output voltage Input current Output current Transition frequency Unit V Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −20mA IO/II= −50mA/−2.5mA VO= −5V, IO= −50mA − − VCE= −10V, IE= 50mA, f= 100MHz ∗ ∗ Transition frequency of the device Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LDTB123YLT1G,S-LDTB123YLT1G zElectrical characteristic curves -100 -10m -5m VO= −0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) -50 -20 -10 -5 -2 Ta= −40 °C 25 °C 100 °C -1 -500m -200m -100m -0.5m -1m -2m -5m -10m -20m -1m -500µ Ta=100°C 25°C −40°C -200µ -100µ -50µ -20µ -10µ -5µ -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) 1k 100 lO/lI=20 -500m OUTPUT VOLTAGE : VO (on) (V) 200 -1 VO= −5V 500 DC CURRENT GAIN : GI -2m -2µ -1µ 0 -50m -100m -200m -500m VCC= −5V Ta=100°C 25°C −40°C 50 20 10 5 -200m -100m Ta=100°C 25°C −40°C -50m -20m -10m -5m -2m 2 1 -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m -1m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current Fig.4 Output voltage vs. output current Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LDTB123YLT1G,S-LDTB123YLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 3/3