LDTC114EET1G

LDTC114EET1G S-LDTC114EET1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 1. FEATURES ● Simplifies circuit design ● Reduces board space and component count ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● SC89 S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 3 COLLECTOR qualified and PPAP capable. 2. DEVICE MARKING AND RESISTOR VALUES R1(K) R2(K) 1 BASE R1 Shipping Device Marking LDTC114EET1G 8A 10 10 3000/Tape&Reel LDTC114EET3G 8A 10 10 10000/Tape&Reel R2 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage Parameter VCEO 50 Vdc Collector–Base Voltage VCBO 50 Vdc IC 100 mAdc Symbol Limits Unit Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 200 mW Derate above 25ºC 1.6 mW/ºC 600 ºC/W Thermal Resistance, RΘJA Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 @ Minimum Pad. Leshan Radio Company, LTD. Rev.O Mar 2016 1/4 LDTC114EET1G, S-LDTC114EET1G Bias Resistor Transistor 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 μAdc, IE = 0) Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Symbol VBR(CEO) VBR(CBO) ICBO ICEO IEBO Min. Typ. Max. 50 - - Unit V V 50 - nA - - 100 nA - - 500 mA - - 0.5 35 60 - - - 0.25 ON CHARACTERISTICS (Note 2.) DC Current Gain HFE (IC = 5.0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage VCE(sat) (IC = 10 mAdc, IB = 0.3 mAdc) Output Voltage (on) VOL (VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ) Output Voltage (on) V V - - 0.2 4.9 - - VOH (VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ) V Input Resistor R1 7 10 13 Resistor Ratio R1/R2 0.8 1 1.2 KΩ 2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0% Leshan Radio Company, LTD. Rev.O Mar 2016 2/4 LDTC114EET1G, S-LDTC114EET1G Bias Resistor Transistor 6.ELECTRICAL CHARACTERISTICS CURVES 300 1 VCE=10V 150℃ 250 150℃ 85℃ HFE,DC Current Gain VCE(sat),Collector-Emitter Voltage(V) IC/IB=10 0.1 25℃ -55℃ 85℃ 200 25℃ 150 -55℃ 100 50 0.01 0 0 20 40 60 IC,Collector Current(mA) 80 0.1 1 10 IC,Collector Current(mA) 100 DC Current Gain VCE(sat) vs. IC 16 100 Vo=0.2 V Vo=5V 10 Vin,Input Voltage(V) IC,Collector Current(mA) 14 150℃ 1 85℃ 12 10 8 6 25℃ 0.1 -55℃,25℃,85℃,150℃ 4 -55℃ 2 0.01 0 0 2 4 6 8 Vin,Input Voltage(V) 1 10 IC,Collector Current(mA) 100 Vin vs. IC IC vs. Vin Leshan Radio Company, LTD. 0.1 Rev.O Mar 2016 3/4 LDTC114EET1G, S-LDTC114EET1G Bias Resistor Transistor 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 1.50 NOM MAX MIN NOM MAX 1.60 1.70 0.059 0.063 0.067 B 0.75 0.85 0.95 0.030 0.034 0.040 C 0.60 0.70 0.80 0.024 0.028 0.031 D 0.23 0.28 0.33 0.009 0.011 0.013 G 0.50BSC 0.020BSC H 0.53REF 0.021REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 L 1.10REF 0.02 0.043REF M --- --- 10° --- --- 10° N --- --- 10° --- --- 10° S 1.50 1.60 1.70 0.059 0.063 0.067 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.O Mar 2016 4/4