LDTC143EET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTC114EET1G Series S-LDTC114EET1G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-89 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SC-89 PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Value Unit 200 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RqJA 400 °C/W TJ, Tstg −55 to +150 °C Collector Current THERMAL CHARACTERISTICS Rating Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad Rev.B 1/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series ORDERING INFORMATION AND RESISTOR VALUES Marking R1 (K) R2 (K) Package Shipping † LDTC114EET1G 8A 10 10 SC−89 3000 Tape & Reel LDTC124EET1G 8B 22 22 SC−89 3000 Tape & Reel LDTC144EET1G 8C 47 47 SC−89 3000 Tape & Reel LDTC114YET1G 8D 10 47 SC−89 3000 Tape & Reel LDTC114TET1G 94 10 ∞ SC−89 3000 Tape & Reel LDTC143TET1G 8F 4.7 ∞ SC−89 3000 Tape & Reel LDTC123EET1G 8H 2.2 2.2 SC−89 3000 Tape & Reel LDTC143EET1G 8J 4.7 4.7 SC−89 3000 Tape & Reel LDTC143ZET1G 8K 4.7 47 SC−89 3000 Tape & Reel LDTC124XET1G 8L 22 47 SC−89 3000 Tape & Reel LDTC123JET1G 8M 2.2 47 SC−89 3000 Tape & Reel LDTC115EET1G 8N 100 100 SC−89 3000 Tape & Reel LDTC144WET1G 8P 47 22 SC−89 3000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc OFF CHARACTERISTICS LDTC114EET1G LDTC124EET1G LDTC144EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC115EET1G LDTC144WET1G Rev.B 2/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 350 350 15 30 200 150 140 150 140 − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 − − Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTC114EET1G LDTC124EET1G LDTC144EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC115EET1G LDTC144WET1G Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTC123EET1G (IC = 10 mA, IB = 1 mA) LDTC143TET1G/LDTC114TET1G/ LDTC143EET1G/LDTC143ZET1G/LDTC124XET1G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) VOL LDTC114EET1G LDTC124EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC144EET1G LDTC115EET1G LDTC144WET1G Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) LDTC143TET1G LDTC143ZET1G LDTC114TET1G LDTC115 EET1G VOH Vdc Vdc 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor LDTC114EET1G LDTC124EET1G LDTC144EET1G LDTC114YET1G LDTC114TET1G LDTC143TET1G LDTC123EET1G LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC115EET1G LDTC144WET1G Resistor Ratio LDTC114EET1G/LDTC124EET1G/ LDTC144EET1G/LDTC115EET1G LDTC114YET1G LDTC143TET1G/LDTC114TET1G LDTC123EET1G/LDTC143EET1G LDTC143ZET1G LDTC124XET1G LDTC123JET1G LDTC144WET1G Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 kW 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 R1/R2 Rev.B 3/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G Ic/Ib=10 0.1 0.01 Vce=10V 100 10 1 0 10 20 30 40 50 60 0 20 IC, COLLECTOR CURRENT (mA) -55℃ 25℃ 75℃ 100℃ 125℃ -55℃ Fig. 1 VCE(sat) VS IC 60 80 100 120 25℃ 75℃ 100℃ 125℃ Fig. 2 DC CURRENT GAIN 100 4.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 A 4 Cob, CAPACITANCE (pF) 40 IC, COLLECTOR CURRENT (mA) 3.5 3 2.5 2 1.5 1 Vo=5V 10 1 0.1 0.01 0.5 0 0.001 0 10 20 30 40 50 60 0 0.5 VR, REVERSE BIAS VOLTAGE (V) Fig. 3 OUTPUT CAPACITANCE 1 1.5 2 2.5 3 3.5 Vin, INPUT VOLTAGE (V) -55℃ -25℃ 25℃ 75℃ 125℃ Fig. 4 OUTPUT CURRENT VS INPUT VOLTAGE Rev.B 4/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G 100 Vin, INPUT VOLTAGE (V) Vo=0.2V 10 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) -55℃ COLLECTOR 25℃ CURRENT:Ic(mA) -25℃ 75℃ 125℃ Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT Rev.B 5/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series 1 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC115EET1G Ic/Ib=10 0.1 Vce=10V 100 0.01 10 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) -55℃ 25℃ 75℃ 100℃ 60 1 125℃ 10 IC, COLLECTOR CURRENT (mA) -55℃ Fig. 6 VCE(sat) VS IC 75℃ 100℃ 125℃ Fig. 7 DC CURRENT GAIN 100 4.5 f = 1 MHz IE = 0 A Vo=5V IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 25℃ 100 3.5 3 2.5 2 1.5 1 10 1 0.1 0.01 0.5 0 0.001 0 10 20 30 40 50 60 0 0.5 VR, REVERSE BIAS VOLTAGE (V) Fig. 8 OUTPUT CAPACITANCE 1 1.5 2 2.5 3 3.5 Vin, INPUT VOLTAGE (V) -55℃ -25℃ 25℃ 75℃ 125℃ Fig. 9 OUTPUT CURRENT VS INPUT VOLTAGE Rev.B 6/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series TYPICAL ELECTRICAL CHARACTERISTICS − LDTC115EET1G 100 Vin, INPUT VOLTAGE (V) Vo=0.2V 10 1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) -55℃ -25℃ 25℃ 75℃ 125℃ Fig. 10 INPUT VOLTAGE VS OUTPUT CURRENT Rev.B 7/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Fig. 11 LEVEL SHIFTER:CONNECTS 12 TO 24 VOLT CIRCUITS TO LOGIC +12 V VCC OUT IN LOAD Fig. 12 OPEN COLLECTOR INVERTER: INVERTS THE INPUT SIGNAL Fig. 13 INEXPENSIVE,UNREGULATED CURRENT SOURCE Rev.B 8/9 LESHAN RADIO COMPANY, LTD. LDTC114EET1G Series,S-LDTC114EET1G Series SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS Rev.B 9/9