0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
LDTC143ZM3T5G

LDTC143ZM3T5G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-723-3

  • 描述:

    带有单片偏置电阻网络的NPN硅表面贴装晶体管

  • 详情介绍
  • 数据手册
  • 价格&库存
LDTC143ZM3T5G 数据手册
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-723 package which is designed for low power surface mount applications. 3 2 1 ƽSimplifies Circuit Design ƽReduces Board Space SOT-723 ƽReduces Component Count PIN 3 COLLECTOR (OUTPUT) ƽThe SOT-723 Package can be Soldered using Wave or Reflow. ƽAvailable in 4 mm, 8000 Unit Tape & Reel ƽThese are Pb-Free Devices. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) mW Rating Collector Current MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C mW/°C Thermal Resistance – Junction-to-Ambient RθJA 480 (Note 1) 205 (Note 2) °C/W Junction Temperature TJ 150 °C Storage Temperature Range Tstg –55 to +150 XX M 1 xx M 2 = Specific Device Code = Date Code °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Rev.O 1/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series DEVICE MARKING AND RESISTOR VALUES Device LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G S-LDTC114EM3T5G S-LDTC124EM3T5G S-LDTC144EM3T5G S-LDTC114YM3T5G S-LDTC114TM3T5G S-LDTC143TM3T5G S-LDTC123EM3T5G S-LDTC143EM3T5G S-LDTC143ZM3T5G S-LDTC124XM3T5G S-LDTC123JM3T5G S-LDTC115EM3T5G S-LDTC144WM3T5G S-LDTC144TM3T5G Marking R1 (K) R2 (K) Package Shipping 8A 8B 8C 8D 94 8F 8H 8J 8K 8L 8M 8N 8P 8T 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 10 22 47 47 ∞ ∞ 2.2 4.7 47 47 47 100 22 ∞ SOT−723 8000/Tape & Reel Rev.O 2/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 0.2 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 160 60 100 140 140 350 350 15 30 200 150 140 150 140 350 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) LDTC123EM3T5G (IC = 10 mA, IB = 1 mA) LDTC143TM3T5G/LDTC114TM3T5G/ LDTC143EM3T5G/LDTC143ZM3T5G/ LDTC124XM3T5G/LDTC144TM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) VOL LDTC114EM3T5G LDTC124EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC144EM3T5G LDTC144TM3T5G LDTC115EM3T5G LDTC144WM3T5G Vdc Vdc 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. Rev.O 3/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) LDTC143TM3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) LDTC143ZM3T5G LDTC114TM3T5G LDTC144TM3T5G VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 61.1 kW 0.8 1.0 1.2 0.17 − 0.8 0.055 0.38 0.038 1.7 0.21 − 1.0 0.1 0.47 0.047 2.1 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 4) Input Resistor LDTC114EM3T5G LDTC124EM3T5G LDTC144EM3T5G LDTC114YM3T5G LDTC114TM3T5G LDTC143TM3T5G LDTC123EM3T5G LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC115EM3T5G LDTC144WM3T5G LDTC144TM3T5G Resistor Ratio R1/R2 LDTC114EM3T5G/LDTC124EM3T5G/ LDTC144EM3T5G/LDTC115EM3T5G LDTC114YM3T5G LDTC143TM3T5G/LDTC114TM3T5G/LDTC144TM3T5G LDTC123EM3T5G/LDTC143EM3T5G LDTC143ZM3T5G LDTC124XM3T5G LDTC123JM3T5G LDTC144WM3T5G Input voltage (VCC = 5.0 V, I O = 100 mA) LDTC123JM3T5G VI(off) − − 0.5 V Input voltage (VO = 0.3 V, I O = 5 mA) LDTC123JM3T5G VI(on) 1.1 − − V PD , POWER DISSIPATION (MILLIWATTS) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 300 250 200 150 100 50 0 −50 RqJA = 480°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Rev.O 4/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C TA=−25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 TA=−25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current Rev.O 5/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC124EM3T5G IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 −25°C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C 25°C 10 50 40 VCE = 10 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Rev.O 6/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series 10 1000 IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 TA=75°C 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC144EM3T5G 1 Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 VO = 5 V 0.001 Figure 14. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 10 IC, COLLECTOR CURRENT (mA) TA=−25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current Rev.O 7/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series 300 1 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114YM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 200 −25°C 150 100 50 0 80 TA=75°C VCE = 10 250 1 2 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 Figure 19. Output Capacitance 45 50 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) TA=−25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Rev.O 8/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS − LDTC143ZM3T5G 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25°C 100 75°C 25°C TA = –25°C 0.01 TA = –25°C 10 VCE = 10 V 1 0.001 2 7 12 17 22 27 1 32 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) vs. IC Figure 28. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C TA = –25°C 10 1 0.1 25°C VO = 5 V 0.01 0 10 20 30 40 50 60 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance Figure 30. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 75°C TA = –25°C 25°C 75°C 1 0.1 0 6 12 18 24 IC, COLLECTOR CURRENT (mA) 30 Figure 31. Input Voltage vs. Output Current Rev.O 9/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source Rev.O 10/14 LESHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series PACKAGE DIMENSIONS SOT−723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm Ǔ ǒinches Rev.O 11/14 LESHAN RADIO COMPANY, LTD. Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the “peel–back” cover tape. • Two Reel Sizes Available (7"and 13",) • SOT–23, SC–70/SOT–323, • Used for Automatic Pick and Place Feed Systems SC–89, SC–88/SOT–363, SC–88A/SOT–353, • Minimizes Product Handling SOD–323, SOD-523 in 8 mm Tape • EIA 481, –1, –2 Use the standard device title and add the required suffix as listed in the option table below (Table 1). Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. SOD-323 SC-59, SC-70, SC-75,SOT-23 8 mm 8 mm SC-88, SOT-363 T1 Orientation SC-88A, SOT-353 T1 Orientation 8 mm 8 mm Direction of Feed Typical Reel Orientations Table 1. EMBOSSED TAPE AND REEL ORDERING INFORMATION Tape Width (mm) Package SOT–23 8 Pitch mm 4 8 8 SC–70/SOT–323 4 8 8 4 Reel Size mm(inch) Devices Per Reel and Minimum Device Suffix 178 Order Quantity (7) 3,000 T1 330 (13) 10,000 T3 178 (7) 3,000 T1 330 (13) 10,000 T3 178 (7) 3,000 T1 330 (13) 10,000 T3 178 (7) 3,000 T1 330 (13) 10,000 T3 178 (7) 3,000 T1 330 (13) 10,000 T3 178 (7) 3,000 T1 330 (13) 10,000 T3 178 (7) 3,000 T1 330 (13) 10,000 T3 SC–89 8 SC–88/SOT-363 8 4 8 8 SC–88A/SOT-353 SOD-323 4 8 8 4 8 8 4 SOD-523 8 Rev.O 12/14 LESHAN RADIO COMPANY, LTD. EMBOSSED TAPE AND REEL DATA FOR DISCRETES CARRIER TAPE SPECIFICATIONS P0 K D t P2 10 Pitches Cumulative Tolerance on Tape ± 0.2mm( ± 0.008’’ ) E Top Cover Tape B1 A0 F See Note 1 P Center Lines of Cavity Embossment For Machine Reference Only Including Draft and RADII Concentric Around B0 10 o W B0 K0 D1 For Components 2.0mm x 1.2mm and Larger User Direction of Feed R Min Bar Code Label Tape and Components Shall Pass Around Radius “R” Embossed Carrier Bending Radius Without Damage 100 mm (3.937 ’’) Maximum Component Rotation 1 mm Max Typical Component Cavity Center Line Typical Component Center Line *Top Cover Tape Thickness(t 1 ) 0.10mm (0.004’’ )Max. Embossment Tape 1 mm(.039’’ ) Max 250 mm (9.843’’) Camber (Top View) Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm DIMENSIONS Tape Size B1 Max 4.55mm (.179’’) 8.2mm 12mm (.323’’) 12.1mm 16mm (.476’’) 20.1mm 24mm (.791’’) 8mm D 1.5+0.1mm - 0.0 (.059+.004’’ - 0.0) D1 E 1.0Min 1.75 ± 0.1mm (.039’’) (.069±.004) 1.5mmMin (.060’’) F 3.5 ± 0.05mm (.138±.002’’) 5.5 ± 0.05mm (.217 ± .002’’) 7.5 ± 0.10mm (.295 ± .004’’) 11.5 ± 0.1mm (.453 ± .004’’) K P0 2.4mm Max 4.0 ± 0.1mm (.094’’) (.157 ± .004’’) 6.4mm Max (.252’’) 7.9mm Max (.311’’) 11.9mmMax (.468’’) P2 RMin TMax WMax 2.0 ± 0.1mm (.079 ± .002’’) 25mm 0.6mm (.98’’) (.024’’) 30mm (1.18’’) 8.3mm (.327’’) 12 ± .30mm (.470 ± .012’’) 16.3mm (.642’’) 24.3mm (.957’’) Metric dimensions govern - English are in parentheses for reference only. NOTE 1: A 0 , B 0 , and K 0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to.50 mm max., NOTE 2: the component cannot rotate more than 10 o within the determined cavity. NOTE 3: If B1 exceeds 4.2 mm (.165”) for 8 mm embossed tape, the tape may not feed through all tape feeders. Rev.O 13/14 LESHAN RADIO COMPANY, LTD. EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002’’) (.06’’) A 50mm Min (1.969’’) 20.2mm Min (.795’’) Full Radius G Inside Dimension Measured Near Hub Size 8 mm 12mm 16mm 24 mm A Max G 330mm (12.992’’) 330mm (12.992’’) 360mm (14.173’’) 360mm (14.173’’) 8.4mm+1.5mm, -0.0 (.33’’+.059’’, -0.00) 12.4mm+2.0mm, -0.0 (.49 ’’+ .079’’, -0.00) 16.4mm+2.0mm, -0.0 (.646’’+.078’’, -0.00) 24.4mm+2.0mm, -0.0 (.961’’+.070’’, -0.00) T Max 14.4mm (.56’’) 18.4mm (.72’’) 22.4mm (.882’’) 30.4mm (1.197’’) Reel Dimensions Metric Dimensions Govern –– English are in parentheses for reference only Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) Rev.O 14/14
LDTC143ZM3T5G
物料型号:文档介绍了LDT114EM3T5G系列和S-LDT114EM3T5G系列的数字晶体管。

器件简介:这些晶体管设计用于替代单个设备及其外部电阻偏置网络。它们包含一个带有单体偏置网络的单一晶体管,该网络由两个电阻器组成:串联基极电阻器和基极-发射极电阻器。使用这种偏置电阻晶体管(BRT)可以减少系统成本和板空间。

引脚分配:晶体管采用SOT-723封装,具有3个引脚,分别为基极(输入)、发射极(地)和集电极(输出)。

参数特性:文档列出了最大额定值,包括集电极-基极电压、集电极-发射极电压和集电极电流。还提供了热特性,如总设备耗散、结到环境的热阻和结温。

功能详解:文档详细描述了晶体管的电气特性,包括截止特性、开启特性、直流电流增益、饱和电压、输出电压、输入电阻和电阻比。

应用信息:提供了NPN BRT的典型应用,如电平转换器、开路集电极反相器和廉价的非调节电流源。

封装信息:提供了SOT-723封装的尺寸和焊接足迹,以及用于小信号晶体管、FET和二极管的带式卷轴和包装规格。
LDTC143ZM3T5G 价格&库存

很抱歉,暂时无法提供与“LDTC143ZM3T5G”相匹配的价格&库存,您可以联系我们找货

免费人工找货
LDTC143ZM3T5G
  •  国内价格
  • 1+0.13161
  • 30+0.12691
  • 100+0.12221
  • 500+0.11281
  • 1000+0.10811
  • 2000+0.10529

库存:0

LDTC143ZM3T5G
    •  国内价格
    • 20+0.19667
    • 200+0.15542
    • 600+0.13241

    库存:800

    LDTC143ZM3T5G
    •  国内价格
    • 20+0.32590
    • 100+0.24380
    • 1000+0.18900
    • 8000+0.13700
    • 40000+0.12330

    库存:2755